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Agostino Aprà
Agostino Aprà
CEA, Universitè Grenoble Alpes
Email verificata su cea.fr
Titolo
Citata da
Citata da
Anno
Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
SDF A. Crippa, R. Ezzouch, A. Aprá, A. Amisse, R. Laviéville, L. Hutin, B ...
Nature Communications 10 (2776), 2019
1512019
A single hole spin with enhanced coherence in natural silicon
N Piot, B Brun, V Schmitt, S Zihlmann, VP Michal, A Apra, ...
Nature Nanotechnology 17 (10), 1072-1077, 2022
842022
Dispersively probed microwave spectroscopy of a silicon hole double quantum dot
R Ezzouch, S Zihlmann, VP Michal, J Li, A Aprá, B Bertrand, L Hutin, ...
Physical Review Applied 16 (3), 034031, 2021
212021
Statistical and electrical modeling of FDSOI four-gate qubit MOS devices at room temperature
E Catapano, G Ghibaudo, M Cassé, TM Frutuoso, BC Paz, T Bedecarrats, ...
IEEE Journal of the Electron Devices Society 9, 582-590, 2021
72021
Challenges and perspectives in the modeling of spin qubits
YM Niquet, L Hutin, BM Diaz, B Venitucci, J Li, V Michal, ...
2020 IEEE International Electron Devices Meeting (IEDM), 30.1. 1-30.1. 4, 2020
72020
Qubit read-out in Semiconductor quantum processors: challenges and perspectives
T Meunier, M Urdampilleta, D Niegemann, B Jadot, E Charion, ...
2019 IEEE International Electron Devices Meeting (IEDM), 31.6. 1-31.6. 4, 2019
72019
Gate-reflectometry dispersive readout of a spin qubit in silicon
A Crippa, R Ezzouch, A Aprá, L Hutin, B Bertrand, M Vinet, ...
arXiv preprint arXiv:1811.04414, 2018
52018
Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures
E Catapano, A Aprà, M Cassé, F Gaillard, S de Franceschi, T Meunier, ...
Solid-State Electronics 193, 108291, 2022
42022
2020 IEEE International Electron Devices Meeting (IEDM)
YM Niquet, L Hutin, BM Diaz, B Venitucci, J Li, V Michal, ...
IEEE, 2020
42020
Characterization and Lambert–W Function based modeling of FDSOI five-gate qubit MOS devices down to cryogenic temperatures
E Catapano, A Aprà, M Cassé, F Gaillard, S de Franceschi, T Meunier, ...
2021 Joint International EUROSOI Workshop and International Conference on …, 2021
12021
Charge and spin control of electron and holes in silicon quantum dot arrays
A Apra
Université Grenoble Alpes [2020-....], 2023
2023
Contrôle de la charge et du spin des électrons et des trous dans les arrays de points quantiques en silicium
A Apra
Université Grenoble Alpes, 2023
2023
Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures (vol 193, 108291, 2022)
E Catapano, A Apra, M Casse, F Gaillard, S de Franceschi, T Meunier, ...
SOLID-STATE ELECTRONICS 199, 2023
2023
Corrigendum to" Modeling and simulations of FDSOI five-gate qubit MOS devices down to deep cryogenic temperatures"[Solid State Electron. 193 (2022) 108291]
E Catapano, A Aprà, M Cassé, F Gaillard, S de Franceschi, T Meunier, ...
Solid State Electronics 199, 108540, 2023
2023
Dispersively Probed Microwave Spectroscopy of a Silicon Hole Double Quantum Dot
S Zihlmann, R Ezzouch, V Michal, J Li, A Apra, B Bertrand, L Hutin, ...
APS March Meeting Abstracts 2022, S36. 011, 2022
2022
Physical and technological challenges towards silicon-based quantum computing
A Aprà, R Ezzouch, B Bertrand, N Rambal, E Catapano, H Niebojcwski, ...
2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021
2021
Dispersive vs charge-sensing readout for linear quantum registers
A Aprà, A Crippa, MLV Tagliaferri, J Li, R Ezzouch, B Bertrand, L Hutin, ...
2020 IEEE International Electron Devices Meeting (IEDM), 38.4. 1-38.4. 4, 2020
2020
Towards scalable hole spin qubits in silicon
R Ezzouch, S Zihlmann, A Crippa, R Maurand, A Aprà, A Amisse, X Jehl, ...
Bulletin of the American Physical Society 65, 2020
2020
Linear dispersion relation for a fluid of light in an atomic vapor
Q Fontaine, A Apra, G Lerario, E Giacobino, A Bramati, Q Glorieux
Frontiers in Optics, FTh4B. 6, 2017
2017
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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