Articoli con mandati relativi all'accesso pubblico - Debbie G. Senesky, Ph.D.Ulteriori informazioni
Non disponibili pubblicamente: 21
Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure
HP Phan, KM Dowling, TK Nguyen, T Dinh, DG Senesky, T Namazu, ...
Materials & Design 156, 16-21, 2018
Mandati: Australian Research Council
DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600° C in air
AJ Suria, AS Yalamarthy, H So, DG Senesky
Semiconductor Science and Technology 31 (11), 115017, 2016
Mandati: US National Science Foundation
Highly antireflective AlGaN/GaN ultraviolet photodetectors using ZnO nanorod arrays on inverted pyramidal surfaces
H So, J Lim, AJ Suria, DG Senesky
Applied Surface Science 409, 91-96, 2017
Mandati: US National Science Foundation
Ultra-high-Q gallium nitride SAW resonators for applications with extreme temperature swings
A Qamar, SR Eisner, DG Senesky, M Rais-Zadeh
Journal of Microelectromechanical Systems 29 (5), 900-905, 2020
Mandati: US National Science Foundation, US Department of Defense, US National …
Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
AJ Suria, HC Chiamori, A Shankar, DG Senesky
Sensors for Extreme Harsh Environments II 9491, 6-13, 2015
Mandati: US National Aeronautics and Space Administration
Self-powered monolithic accelerometer using a photonic gate
T Nguyen, T Dinh, HP Phan, TK Nguyen, AP Joy, B Bahreyni, A Qamar, ...
Nano Energy 76, 104950, 2020
Mandati: Australian Research Council
500 C SiC PWM Integrated Circuit
S Kargarrazi, H Elahipanah, S Saggini, D Senesky, CM Zetterling
IEEE Transactions on Power Electronics 34 (3), 1997-2001, 2018
Mandati: Knut and Alice Wallenberg Foundation
A single input multiple output (SIMO) variation-tolerant nanosensor
DI Moon, B Kim, R Peterson, K Badokas, ML Seol, DG Senesky, JW Han, ...
ACS sensors 3 (9), 1782-1788, 2018
Mandati: US National Aeronautics and Space Administration
Hall-effect sensor design with physics-informed Gaussian process modeling
Y Xu, AV Lalwani, K Arora, Z Zheng, A Renteria, DG Senesky, P Wang
IEEE Sensors Journal 22 (23), 22519-22528, 2022
Mandati: US National Science Foundation
Extended exposure of gallium nitride heterostructure devices to a simulated Venus environment
SR Eisner, HS Alpert, CA Chapin, AS Yalamarthy, PF Satterthwaite, ...
2021 IEEE Aerospace Conference (50100), 1-12, 2021
Mandati: US National Science Foundation, US National Aeronautics and Space Administration
High temperature degradation modes observed in gallium nitride-based Hall-effect sensors
A Krone, J Kasitz, D Huitink, H Alpert, DG Senesky, S Shetty, G Salamo
Journal of Electronic Packaging 144 (2), 021115, 2022
Mandati: US National Science Foundation
Effective in-plane moduli of fused filament fabrication material with aligned mesostructure
R Chen, D Senesky
JOM 72 (3), 1314-1323, 2020
Mandati: US National Science Foundation, US Department of Defense
Low-temperature operation of gallium nitride based ultraviolet photodetectors
RA Miller, C Chapin, K Dowling, R Chen, A Suria, DG Senesky
AIAA SPACE 2016, 5497, 2016
Mandati: US National Aeronautics and Space Administration
Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors
HC Chiamori, R Miller, A Suria, N Broad, DG Senesky
Sensors for Extreme Harsh Environments II 9491, 6-12, 2015
Mandati: US National Aeronautics and Space Administration
Hall Effect Sensor Design Optimization With Multi-Physics Informed Gaussian Process Modeling
Y Xu, Z Zheng, K Arora, DG Senesky, P Wang
International Design Engineering Technical Conferences and Computers and …, 2022
Mandati: US National Science Foundation
Temperature and field dependencies of current leakage mechanisms in IrOx contacts on InAlN/GaN heterostructures
SR Eisner, DG Senesky
Applied Physics Letters 123 (15), 2023
Mandati: US National Science Foundation, US National Aeronautics and Space Administration
Degradation of gallium nitride-based Hall-effect sensors in high temperature environments
A Krone, H Alpert, S Shetty, DG Senesky, G Salamo, D Huitink
International Electronic Packaging Technical Conference and Exhibition 84041 …, 2020
Mandati: US National Science Foundation
Low-temperature and pressure response of InAlN/GaN ring-shaped high electron mobility transistors
CA Chapin, RA Miller, R Chen, KM Dowling, DG Senesky
2017 19th International Conference on Solid-State Sensors, Actuators and …, 2017
Mandati: US National Science Foundation, US National Aeronautics and Space Administration
Irradiation Response of Graphene Enhanced Gallium Nitride Metal-Semiconductor-Metal Ultraviolet Photodetectors
HC Chiamori, N Broad, C Angadi, R Miller, C Chapin, A Suria, ...
MRS Online Proceedings Library 1746, 13-19, 2015
Mandati: US National Aeronautics and Space Administration
Data-Driven Design of High Electron Mobility Transistor Devices Using Physics-Informed Gaussian Process Modeling
A Renteria, Y Xu, B Hamdan, Z Li, S Cordero, DG Senesky, P Wang
International Design Engineering Technical Conferences and Computers and …, 2023
Mandati: US National Science Foundation
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