Harsh environment silicon carbide sensors for health and performance monitoring of aerospace systems: A review DG Senesky, B Jamshidi, KB Cheng, AP Pisano
IEEE Sensors Journal 9 (11), 1472-1478, 2009
240 2009 A SiC MEMS resonant strain sensor for harsh environment applications RG Azevedo, DG Jones, AV Jog, B Jamshidi, DR Myers, L Chen, X Fu, ...
IEEE Sensors Journal 7 (4), 568-576, 2007
228 2007 Advances in silicon carbide science and technology at the micro-and nanoscales R Maboudian, C Carraro, DG Senesky, CS Roper
Journal of Vacuum Science & Technology A 31 (5), 2013
186 2013 AlN/3C–SiC composite plate enabling high‐frequency and high‐Q micromechanical resonators CM Lin, YY Chen, VV Felmetsger, DG Senesky, AP Pisano
Advanced Materials 24 (20), 2722-2727, 2012
182 2012 Solar-blind photodetectors for harsh electronics DS Tsai, WC Lien, DH Lien, KM Chen, ML Tsai, DG Senesky, YC Yu, ...
Scientific reports 3 (1), 2628, 2013
143 2013 Temperature sensor based on 4H-silicon carbide pn diode operational from 20 C to 600 C N Zhang, CM Lin, DG Senesky, AP Pisano
Applied Physics Letters 104 (7), 2014
122 2014 High-Q aluminum nitride Lamb wave resonators with biconvex edges CM Lin, YJ Lai, JC Hsu, YY Chen, DG Senesky, AP Pisano
Applied Physics Letters 99 (14), 2011
107 2011 AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices CM Lin, WC Lien, VV Felmetsger, MA Hopcroft, DG Senesky, AP Pisano
Applied Physics Letters 97 (14), 2010
94 2010 4H–SiC Metal–Semiconductor–Metal Ultraviolet Photodetectors in Operation of 450 WC Lien, DS Tsai, DH Lien, DG Senesky, JH He, AP Pisano
IEEE Electron Device Letters 33 (11), 1586-1588, 2012
91 2012 Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures CM Lin, YY Chen, VV Felmetsger, WC Lien, T Riekkinen, DG Senesky, ...
Journal of Micromechanics and Microengineering 23 (2), 025019, 2013
85 2013 Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In Situ Heating M Hou, H So, AJ Suria, AS Yalamarthy, DG Senesky
IEEE Electron Device Letters 38 (1), 56-59, 2016
84 2016 High responsivity, low dark current ultraviolet photodetectors based on two-dimensional electron gas interdigitated transducers PF Satterthwaite, AS Yalamarthy, NA Scandrette, AKM Newaz, ...
Acs Photonics 5 (11), 4277-4282, 2018
79 2018 New developments in sensing technology for structural health monitoring SC Mukhopadhyay
Springer Science & Business Media, 2011
79 2011 Anchor loss reduction in AlN Lamb wave resonators using phononic crystal strip tethers CM Lin, JC Hsu, DG Senesky, AP Pisano
2014 IEEE International Frequency Control Symposium (FCS), 1-5, 2014
74 2014 Profile evolution of high aspect ratio silicon carbide trenches by inductive coupled plasma etching KM Dowling, EH Ransom, DG Senesky
Journal of Microelectromechanical Systems 26 (1), 135-142, 2016
67 2016 Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures TK Nguyen, HP Phan, T Dinh, KM Dowling, ARM Foisal, DG Senesky, ...
Materials & Design 156, 441-445, 2018
66 2018 Continuous V-grooved AlGaN/GaN surfaces for high-temperature ultraviolet photodetectors H So, J Lim, DG Senesky
IEEE Sensors Journal 16 (10), 3633-3639, 2016
58 2016 Nanoarchitectonics for wide bandgap semiconductor nanowires: Toward the next generation of nanoelectromechanical systems for environmental monitoring TA Pham, A Qamar, T Dinh, MK Masud, M Rais‐Zadeh, DG Senesky, ...
Advanced Science 7 (21), 2001294, 2020
57 2020 Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure HP Phan, KM Dowling, TK Nguyen, T Dinh, DG Senesky, T Namazu, ...
Materials & Design 156, 16-21, 2018
51 2018 Monolithic mtesla-level magnetic induction by self-rolled-up membrane technology W Huang, Z Yang, MD Kraman, Q Wang, Z Ou, MM Rojo, AS Yalamarthy, ...
Science advances 6 (3), eaay4508, 2020
45 2020