Gate-controlled quantum dots and superconductivity in planar germanium NW Hendrickx, DP Franke, A Sammak, M Kouwenhoven, D Sabbagh, ...
Nature communications 9 (1), 2835, 2018
169 2018 Shallow and undoped germanium quantum wells: a playground for spin and hybrid quantum technology A Sammak, D Sabbagh, NW Hendrickx, M Lodari, B Paquelet Wuetz, ...
Advanced Functional Materials 29 (14), 1807613, 2019
138 2019 Light effective hole mass in undoped Ge/SiGe quantum wells M Lodari, A Tosato, D Sabbagh, MA Schubert, G Capellini, A Sammak, ...
Physical Review B 100 (4), 041304, 2019
68 2019 Quantum Transport Properties of Industrial D Sabbagh, N Thomas, J Torres, R Pillarisetty, P Amin, HC George, ...
Physical Review Applied 12 (1), 014013, 2019
65 2019 Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures B Paquelet Wuetz, PL Bavdaz, LA Yeoh, R Schouten, H Van Der Does, ...
npj Quantum Information 6 (1), 43, 2020
44 2020 Qubit device integration using advanced semiconductor manufacturing process technology R Pillarisetty, N Thomas, HC George, K Singh, J Roberts, L Lampert, ...
2018 IEEE International Electron Devices Meeting (IEDM), 6.3. 1-6.3. 4, 2018
36 2018 Physical mechanisms of intersubband-absorption linewidth broadening in M Virgilio, D Sabbagh, M Ortolani, L Di Gaspare, G Capellini, M De Seta
Physical Review B 90 (15), 155420, 2014
34 2014 Combined effect of electron and lattice temperatures on the long intersubband relaxation times of Ge/Six M Virgilio, M Ortolani, M Teich, S Winnerl, M Helm, D Sabbagh, ...
Physical Review B 89 (4), 045311, 2014
23 2014 Electron dynamics in silicon–germanium terahertz quantum fountain structures D Sabbagh, J Schmidt, S Winnerl, M Helm, L Di Gaspare, M De Seta, ...
ACS Photonics 3 (3), 403-414, 2016
22 2016 Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy E Calandrini, M Ortolani, A Nucara, G Scappucci, WM Klesse, ...
Journal of Optics 16 (9), 094010, 2014
8 2014 2021 IEEE International Electron Devices Meeting (IEDM) R Pillarisetty, N Thomas, H George, K Singh, J Roberts, L Lampert, ...
IEEE, 2018
5 2018 Epi-cleaning of Ge/GeSn heterostructures L Di Gaspare, D Sabbagh, M De Seta, A Sodo, S Wirths, D Buca, ...
Journal of applied physics 117 (4), 2015
5 2015 Full 300mm fin based QD device characterization HC George, N Thomas, R Pillarisetty, L Lampert, T Watson, J Roberts, ...
APS March Meeting Abstracts 2019, P29. 001, 2019
1 2019 Photoluminescence of phosphorus atomic layer doped Ge grown on Si Y Yamamoto, LW Nien, G Capellini, M Virgilio, I Costina, MA Schubert, ...
Semiconductor Science and Technology 32 (10), 104005, 2017
1 2017 Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology A Sammak, D Sabbagh, N Hendrickx, M Lodari, BP Wuetz, L Yeoh, ...
Mesoscale and Nanoscale Physics arXiv: 1809.02365, 0
1 Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology NE THOMAS, TF Watson, M Metz, JM Boter, JP Dehollain Lorenzana, ...
2018 IEEE International Electron Devices Meeting, IEDM 2018 2018, 2019
2019 Very high mobilities for holes in strained germanium quantum wells N Hendrickx, A Sammak, LR Yeoh, D Sabbagh, M Veldhorst, G Scappucci
APS March Meeting Abstracts 2018, V40. 009, 2018
2018 300mm process line for qubit fabrication HC George, K Singh, R Pillarisetty, N Thomas, J Boter, D Brousse, ...
APS March Meeting Abstracts 2018, C28. 009, 2018
2018 Low-temperature magnetotransport in Si/SiGe heterostructures on 300 mm Si wafers G Scappucci, L Yeoh, D Sabbagh, A Sammak, J Boter, G Droulers, ...
APS March Meeting Abstracts 2017, H26. 012, 2017
2017 Undoped strained germanium quantum wells towards spin qubits G Scappucci, A Sammak, LR Yeoh, D Sabbagh, S Conesa-Boj, S Kolling, ...
APS March Meeting Abstracts 2017, H26. 007, 2017
2017 
Giordano ScappucciQuTech, TU DelftEmail verificata su tudelft.nl