| Oxygen vacancies and donor impurities in β-Ga2O3 JB Varley, JR Weber, A Janotti, CG Van de Walle Applied physics letters 97 (14), 2010 | 1075 | 2010 |
| Quantum computing with defects JR Weber, WF Koehl, JB Varley, A Janotti, BB Buckley, CG Van de Walle, ... Proceedings of the National Academy of Sciences 107 (19), 8513-8518, 2010 | 981 | 2010 |
| Experimental electronic structure of In2O3 and Ga2O3 C Janowitz, V Scherer, M Mohamed, A Krapf, H Dwelk, R Manzke, ... New Journal of Physics 13 (8), 085014, 2011 | 418 | 2011 |
| The electronic structure of β-Ga2O3 M Mohamed, C Janowitz, I Unger, R Manzke, Z Galazka, R Uecker, ... Applied Physics Letters 97 (21), 2010 | 216 | 2010 |
| Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates B Shin, JR Weber, RD Long, PK Hurley, CG Van de Walle, PC McIntyre Applied physics letters 96 (15), 2010 | 202 | 2010 |
| Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices JR Weber, A Janotti, CG Van de Walle Journal of Applied Physics 109 (3), 2011 | 201 | 2011 |
| Dangling-bond defects and hydrogen passivation in germanium JR Weber, A Janotti, P Rinke, CG Van de Walle Applied Physics Letters 91 (14), 2007 | 182 | 2007 |
| Oxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructures MS Miao, JR Weber, CG Van de Walle Journal of Applied Physics 107 (12), 2010 | 121 | 2010 |
| Defects in SiC for quantum computing JR Weber, WF Koehl, JB Varley, A Janotti, BB Buckley, CG Van de Walle, ... Journal of Applied Physics 109 (10), 2011 | 100 | 2011 |
| Quantum computing with defects L Gordon, JR Weber, JB Varley, A Janotti, DD Awschalom, ... MRS Bulletin 38 (10), 802 - 807, 2013 | 80 | 2013 |
| Dangling bonds and vacancies in germanium JR Weber, A Janotti, CG Van de Walle Physical Review B—Condensed Matter and Materials Physics 87 (3), 035203, 2013 | 72 | 2013 |
| Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces JR Weber, A Janotti, CG Van de Walle Applied Physics Letters 97 (19), 2010 | 68 | 2010 |
| Point defects in Al2O3 and their impact on gate stacks JR Weber, A Janotti, CG Van de Walle Microelectronic engineering 86 (7-9), 1756-1759, 2009 | 47 | 2009 |
| Defects at Ge/oxide and III–V/oxide interfaces CG Van de Walle, M Choi, JR Weber, JL Lyons, A Janotti Microelectronic engineering 109, 211-215, 2013 | 36 | 2013 |
| Role of hydrogen at germanium/dielectric interfaces CG Van de Walle, JR Weber, A Janotti Thin Solid Films 517 (1), 144-147, 2008 | 18 | 2008 |
| Erratum:“Oxygen vacancies and donor impurities in β-Ga2O3”[Appl. Phys. Lett. 97, 142106 (2010)] JB Varley, JR Weber, A Janotti, CG Van de Walle Applied Physics Letters 108 (3), 2016 | 13 | 2016 |
| Defects in germanium JR Weber, A Janotti, CG Van de Walle Photonics and Electronics with Germanium, 1-23, 2015 | 12 | 2015 |
| Effects of surface reconstructions on oxygen adsorption at AlN polar surfaces MS Miao, PG Moses, JR Weber, A Janotti, CG Van de Walle Europhysics Letters 89 (5), 56004, 2010 | 12 | 2010 |
| State-of-the-art TCAD: 25 years ago and today M Stettler, S Cea, S Hasan, L Jiang, A Kaushik, P Keys, R Kotlyar, ... 2019 IEEE International Electron Devices Meeting (IEDM), 39.1. 1-39.1. 4, 2019 | 7 | 2019 |
| Dangling bonds, the charge neutrality level, and band alignment in semiconductors JB Varley, JR Weber, A Janotti, CG Van de Walle Journal of Applied Physics 135 (7), 2024 | 4 | 2024 |
Chris G. Van de WalleProfessor of Materials, University of California, Santa BarbaraEmail verificata su mrl.ucsb.edu
