Interface roughness scattering in GaAs/AlAs quantum wells H Sakaki, T Noda, K Hirakawa, M Tanaka, T Matsusue
Applied physics letters 51 (23), 1934-1936, 1987
877 1987 A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain S Sugahara, M Tanaka
Applied Physics Letters 84 (13), 2307-2309, 2004
571 2004 Large Tunneling Magnetoresistance in GaMnAs M Tanaka, Y Higo
Physical Review Letters 87 (2), 026602, 2001
443 2001 Core-level photoemission study of J Okabayashi, A Kimura, O Rader, T Mizokawa, A Fujimori, T Hayashi, ...
Physical Review B 58 (8), R4211, 1998
404 1998 High Temperature Ferromagnetism in GaAs-Based Heterostructures with Mn AM Nazmul, T Amemiya, Y Shuto, S Sugahara, M Tanaka
Physical Review Letters 95 (1), 017201, 2005
336 2005 Ferromagnetism and high Curie temperature in semiconductor heterostructures with Mn δ-doped GaAs and AM Nazmul, S Sugahara, M Tanaka
Physical Review B 67 (24), 241308, 2003
331 2003 Magnetic interactions in a ferromagnetic honeycomb nanoscale network M Tanaka, E Saitoh, H Miyajima, T Yamaoka, Y Iye
Physical Review B—Condensed Matter and Materials Physics 73 (5), 052411, 2006
284 2006 One atomic layer heterointerface fluctuations in GaAs-AlAs quantum well structures and their suppression by insertion of smoothing period in molecular beam epitaxy H Sakaki, M Tanaka, J Yoshino
Japanese journal of applied physics 24 (6A), L417, 1985
269 1985 Epitaxial growth of ferromagnetic ultrathin MnGa films with perpendicular magnetization on GaAs M Tanaka, JP Harbison, J DeBoeck, T Sands, B Philips, TL Cheeks, ...
Applied physics letters 62 (13), 1565-1567, 1993
268 1993 Electromotive force and huge magnetoresistance in magnetic tunnel junctions PN Hai, S Ohya, M Tanaka, SE Barnes, S Maekawa
Nature 458 (7237), 489-492, 2009
246 2009 (GaMn) As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy T Hayashi, M Tanaka, T Nishinaga, H Shimada, H Tsuchiya, Y Otuka
Journal of crystal growth 175, 1063-1068, 1997
243 1997 Epitaxial orientation and magnetic properties of MnAs thin films grown on (001) GaAs: Template effects M Tanaka, JP Harbison, MC Park, YS Park, T Shin, GM Rothberg
Applied physics letters 65 (15), 1964-1966, 1994
239 1994 Atomistic models of interface structures of GaAs-AlxGa1− xAs (x= 0.2− 1) quantum wells grown by interrupted and uninterrupted MBE M Tanaka, H Sakaki
Journal of crystal Growth 81 (1-4), 153-158, 1987
217 1987 Magneto-optic effect of the ferromagnetic diluted magnetic semiconductor K Ando, T Hayashi, M Tanaka, A Twardowski
Journal of applied physics 83 (11), 6548-6550, 1998
201 1998 Local structures of III-V diluted magnetic semiconductors R Shioda, K Ando, T Hayashi, M Tanaka
Physical Review B 58 (3), 1100, 1998
180 1998 Nearly non-magnetic valence band of the ferromagnetic semiconductor GaMnAs S Ohya, K Takata, M Tanaka
Nature Physics 7 (4), 342-347, 2011
175 2011 Ferromagnet (MnAs)/III–V semiconductor hybrid structures M Tanaka
Semiconductor Science and Technology 17 (4), 327, 2002
175 2002 Spinodal nanodecomposition in semiconductors doped with transition metals HKY T. Dietl, K. Sato, T. Fukushima, A. Bonanni, M. Jamet, A. Barski, S ...
Reviews of Modern Physics, 2015
174 2015 Spinodal nanodecomposition in semiconductors doped with transition metals HKY T. Dietl, K. Sato, T. Fukushima, A. Bonanni, M. Jamet, A. Barski, S ...
Reviews of Modern Physics, 2015
174 2015 Mn J Okabayashi, A Kimura, T Mizokawa, A Fujimori, T Hayashi, M Tanaka
Physical Review B 59 (4), R2486, 1999
174 1999 
Pham Nam HaiTokyo Institute of TechnologyEmail verificata su m.titech.ac.jp
