Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 C JL Battaglia, A Kusiak, V Schick, A Cappella, C Wiemer, M Longo, ...
Journal of Applied Physics 107 (4), 2010
108 2010 Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films S Vangelista, E Cinquanta, C Martella, M Alia, M Longo, A Lamperti, ...
Nanotechnology 27 (17), 175703, 2016
80 2016 Novel near-infrared emission from crystal defects in MoS2 multilayer flakes F Fabbri, E Rotunno, E Cinquanta, D Campi, E Bonnini, D Kaplan, ...
Nature communications 7 (1), 13044, 2016
75 2016 Modern chemical synthesis methods towards low-dimensional phase change structures in the Ge–Sb–Te material system H Hardtdegen, M Mikulics, S Rieß, M Schuck, T Saltzmann, U Simon, ...
Progress in crystal growth and characterization of materials 61 (2-4), 27-45, 2015
57 2015 Engineering the growth of MoS2 via atomic layer deposition of molybdenum oxide film precursor C Martella, P Melloni, E Cinquanta, E Cianci, M Alia, M Longo, A Lamperti, ...
Adv. Electron. Mater 2 (10), 1600330, 2016
53 2016 Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μm A Passaseo, R Rinaldi, M Longo, S Antonaci, AL Convertino, R Cingolani, ...
Journal of Applied Physics 89 (8), 4341-4348, 2001
51 2001 Effect of nitrogen doping on the thermal conductivity of GeTe thin films R Fallica, E Varesi, L Fumagalli, S Spadoni, M Longo, C Wiemer
physica status solidi (RRL)–Rapid Research Letters 7 (12), 1107-1111, 2013
45 2013 Metal Organic Chemical Vapor Deposition of Phase Change Ge1 Sb2 Te4 Nanowires M Longo, R Fallica, C Wiemer, O Salicio, M Fanciulli, E Rotunno, ...
Nano letters 12 (3), 1509-1515, 2012
42 2012 Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs M Longo, R Magnanini, A Parisini, L Tarricone, A Carbognani, C Bocchi, ...
Journal of crystal growth 248, 119-123, 2003
37 2003 Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies N Lovergine, M Longo, P Prete, C Gerardi, L Calcagnile, R Cingolani, ...
Journal of applied physics 81 (2), 685-692, 1997
37 1997 Large Spin‐to‐Charge Conversion at Room Temperature in Extended Epitaxial Sb2 Te3 Topological Insulator Chemically Grown on Silicon E Longo, M Belli, M Alia, M Rimoldi, R Cecchini, M Longo, C Wiemer, ...
Advanced Functional Materials 32 (4), 2109361, 2022
36 2022 Au-catalyzed self assembly of GeTe nanowires by MOCVD M Longo, C Wiemer, O Salicio, M Fanciulli, L Lazzarini, E Rotunno
Journal of crystal growth 315 (1), 152-156, 2011
33 2011 Thermal conductivity measurement of a Sb2Te3 phase change nanowire A Saci, JL Battaglia, A Kusiak, R Fallica, M Longo
Applied Physics Letters 104 (26), 2014
32 2014 Chemical vapor deposition of chalcogenide materials for phase-change memories A Abrutis, V Plausinaitiene, M Skapas, C Wiemer, O Salicio, M Longo, ...
Microelectronic Engineering 85 (12), 2338-2341, 2008
28 2008 Influence of doping elements on the formation rate of silicon nanowires by silver-assisted chemical etching C Canevali, M Alia, M Fanciulli, M Longo, R Ruffo, CM Mari
Surface and Coatings Technology 280, 37-42, 2015
27 2015 Crystal structure assessment of Ge–Sb–Te phase change nanowires E Rotunno, L Lazzarini, M Longo, V Grillo
Nanoscale 5 (4), 1557-1563, 2013
27 2013 Ultraviolet optical near-fields of microspheres imprinted in phase change films J Siegel, D Puerto, J Solis, FJ García de Abajo, CN Afonso, M Longo, ...
Applied Physics Letters 96 (19), 2010
26 2010 Growth study of Gex Sby Tez deposited by MOCVD under nitrogen for non-volatile memory applications M Longo, O Salicio, C Wiemer, R Fallica, A Molle, M Fanciulli, C Giesen, ...
Journal of Crystal Growth 310 (23), 5053-5057, 2008
25 2008 Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100) GaAs by metalorganic vapor phase epitaxy G Leo, M Longo, N Lovergine, AM Mancini, L Vasanelli, AV Drigo, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
25 1996 Determination of the valence band offset of MOVPE-grown C Ghezzi, R Magnanini, A Parisini, L Tarricone, E Gombia, M Longo
Physical Review B—Condensed Matter and Materials Physics 77 (12), 125317, 2008
23 2008 
Claudia WiemerEPFL, Stanford University, INFM, MDM, CNREmail verificata su mdm.imm.cnr.it