Ultra Low Thermal Budget Laser Thermal Annealing for 3D Semiconductor and Photovoltaic Applications K Huet
NCCAVS, 2012
226 2012 Ultra low thermal budget anneals for 3D memories: Access device formation K Huet, C Boniface, R Negru, J Venturini
AIP Conference Proceedings 1496 (1), 135-138, 2012
216 2012 Suppression of the orientation effects on bandgap in graphene nanoribbons in the presence of edge disorder D Querlioz, Y Apertet, A Valentin, K Huet, A Bournel, S Galdin-Retailleau, ...
Applied Physics Letters 92 (4), 2008
142 2008 On the ability of the particle Monte Carlo technique to include quantum effects in nano-MOSFET simulation D Querlioz, J Saint-Martin, K Huet, A Bournel, V Aubry-Fortuna, C Chassat, ...
IEEE transactions on electron devices 54 (9), 2232-2242, 2007
100 2007 New insights on bottom layer thermal stability and laser annealing promises for high performance 3D VLSI C Fenouillet-Beranger, B Mathieu, B Previtali, MP Samson, N Rambal, ...
2014 IEEE International Electron Devices Meeting, 27.5. 1-27.5. 4, 2014
64 2014 Optimized laser thermal annealing on germanium for high dopant activation and low leakage current M Shayesteh, D O’Connell, F Gity, P Murphy-Armando, R Yu, K Huet, ...
IEEE Transactions on Electron Devices 61 (12), 4047-4055, 2014
58 2014 Doping of semiconductor devices by Laser Thermal Annealing K Huet, F Mazzamuto, T Tabata, I Toque-Tresonne, Y Mori
Materials Science in Semiconductor Processing 62, 92-102, 2017
57 2017 Defect evolution and dopant activation in laser annealed Si and Ge F Cristiano, M Shayesteh, R Duffy, K Huet, F Mazzamuto, Y Qiu, M Quillec, ...
Materials Science in Semiconductor Processing 42, 188-195, 2016
53 2016 Extended defects formation in nanosecond laser-annealed ion implanted silicon Y Qiu, F Cristiano, K Huet, F Mazzamuto, G Fisicaro, A La Magna, ...
Nano letters 14 (4), 1769-1775, 2014
52 2014 Monte Carlo study of apparent mobility reduction in nano-MOSFETs K Huet, J Saint-Martin, A Bournel, S Galdin-Retailleau, P Dollfus, ...
ESSDERC 2007-37th European Solid State Device Research Conference, 382-385, 2007
49 2007 Theoretical study of the laser annealing process in FinFET structures SF Lombardo, G Fisicaro, I Deretzis, A La Magna, B Curver, B Lespinasse, ...
Applied Surface Science 467, 666-672, 2019
43 2019 Pulsed laser annealing for advanced technology nodes: Modeling and calibration K Huet, J Aubin, PE Raynal, B Curvers, A Verstraete, B Lespinasse, ...
Applied Surface Science 505, 144470, 2020
42 2020 Anomalous Impurity Segregation and Local Bonding Fluctuation in G Fisicaro, K Huet, R Negru, M Hackenberg, P Pichler, N Taleb, ...
Physical Review Letters 110 (11), 117801, 2013
41 2013 Defect kinetics and dopant activation in submicrosecond laser thermal processes K Huet, G Fisicaro, J Venturini, H Besaucèle, A La Magna
Applied Physics Letters 95 (23), 2009
39 2009 Phase field model of the nanoscale evolution during the explosive crystallization phenomenon SF Lombardo, S Boninelli, F Cristiano, I Deretzis, MG Grimaldi, K Huet, ...
Journal of Applied Physics 123 (10), 2018
33 2018 Nickel silicide contacts formed by excimer laser annealing for high efficiency solar cells L Tous, JF Lerat, T Emeraud, R Negru, K Huet, A Uruena, M Aleman, ...
Progress in Photovoltaics: Research and Applications 21 (3), 267-275, 2013
32 2013 Atomically flat low-resistive germanide contacts formed by laser thermal anneal M Shayesteh, K Huet, I Toqué-Tresonne, R Negru, CLM Daunt, N Kelly, ...
IEEE transactions on electron devices 60 (7), 2178-2185, 2013
29 2013 Excimer laser annealing and chemical texturing of ZnO: Al sputtered at room temperature for photovoltaic applications EV Johnson, P Prod'homme, C Boniface, K Huet, T Emeraud, ...
Solar Energy Materials and solar cells 95 (10), 2823-2830, 2011
29 2011 Laser Thermal Anneal of polysilicon channel to boost 3D memory performance JG Lisoni, A Arreghini, G Congedo, M Toledano-Luque, I Toqué-Tresonne, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
25 2014 3D sequential low temperature top tier devices using dopant activation with excimer laser anneal and strained silicon as performance boosters A Vandooren, Z Wu, N Parihar, J Franco, B Parvais, P Matagne, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
24 2020 
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