Colin Humphreys

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Rachel OliverProfessor of Materials Science, Cambridge UniversityEmail verificata su cam.ac.uk
Philip DawsonUniversity of ManchesterEmail verificata su manchester.ac.uk
Gianluigi BottonMcMaster UniversityEmail verificata su mcmaster.ca
Michelle MoramSenior Lecturer and Royal Society University Research Fellow, Imperial College LondonEmail verificata su imperial.ac.uk
Dandan ZhuUniversity of CambridgeEmail verificata su cam.ac.uk
F. C-P. MassabuauUniversity of StrathclydeEmail verificata su strath.ac.uk
Chris BoothroydNanyang Technological UniversityEmail verificata su ntu.edu.sg
David HolecMontanuniversität Leoben, AustriaEmail verificata su unileoben.ac.at
Fabrice OehlerCNRS researcher, Centre for Nanosciences and Nanotechnologies, Université Paris-Saclay (France)Email verificata su c2n.upsaclay.fr
Robert TaylorProfessor of Condensed Matter Physics, University of OxfordEmail verificata su physics.ox.ac.uk
T.M. SmeetonVice President, Research at EnvisicsEmail verificata su envisics.com
Dr. Darren M. GrahamThe University of ManchesterEmail verificata su manchester.ac.uk
Wai Yuen FuResearch Assistant Professor, Electrical and Electronic Engineering, the University of Hong KongEmail verificata su hku.hk
Tongtong ZhuUniversity of CambridgeEmail verificata su cam.ac.uk
James Thomas GriffithsResearch associate, University of CambridgeEmail verificata su cam.ac.uk
Ranjan DattaProfessorEmail verificata su jncasr.ac.in
Siyuan ZhangMax-Planck-Institut für Eisenforschung GmbHEmail verificata su mpie.de
Matthew J. DaviesAttolight AGEmail verificata su attolight.com
Simon HammersleyResearch Associate, University of ManchesterEmail verificata su manchester.ac.uk
G A D BriggsProfessor of Nanomaterials, University of OxfordEmail verificata su materials.ox.ac.uk

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Colin Humphreys

Queen Mary University of London

Email verificata su qmul.ac.uk

Materials science graphene Gallium Nitride electron microscopy science and religion


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+ U study SL Dudarev, GA Botton, SY Savrasov, CJ Humphreys, AP Sutton Physical Review B 57 (3), 1505, 1998	14078	1998
Solid-state lighting CJ Humphreys MRS bulletin 33 (4), 459-470, 2008	492	2008
Machine learning predicts laboratory earthquakes B Rouet‐Leduc, C Hulbert, N Lubbers, K Barros, CJ Humphreys, ... Geophysical Research Letters 44 (18), 9276-9282, 2017	444	2017
Prospects of III-nitride optoelectronics grown on Si D Zhu, DJ Wallis, CJ Humphreys Reports on Progress in Physics 76 (10), 106501, 2013	396	2013
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope TM Smeeton, MJ Kappers, JS Barnard, ME Vickers, CJ Humphreys Applied physics letters 83 (26), 5419-5421, 2003	343	2003
The scattering of fast electrons by crystals CJ Humphreys Reports on Progress in Physics 42 (11), 1825, 1979	315	1979
Absorption parameters in electron diffraction theory PBH CJ Humphreys Philosophical Magazine 18, 115-122, 1968	289	1968
Optical and microstructural studies of InGaN∕ GaN single-quantum-well structures DM Graham, A Soltani-Vala, P Dawson, MJ Godfrey, TM Smeeton, ... Journal of applied physics 97 (10), 2005	270	2005
Critical thickness calculations for InGaN/GaN D Holec, P Costa, MJ Kappers, CJ Humphreys Journal of Crystal Growth 303 (1), 314-317, 2007	269	2007
Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms AJ Kenyon, CE Chryssou, CW Pitt, T Shimizu-Iwayama, DE Hole, ... Journal of Applied Physics 91 (1), 367-374, 2002	252	2002
Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides S Zhang, D Holec, WY Fu, CJ Humphreys, MA Moram Journal of applied physics 114 (13), 2013	236	2013
Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy AN Bright, PJ Thomas, M Weyland, DM Tricker, CJ Humphreys, R Davies Journal of Applied Physics 89 (6), 3143-3150, 2001	225	2001
Carrier localization mechanisms in InGaN/GaN quantum wells D Watson-Parris, MJ Godfrey, P Dawson, RA Oliver, MJ Galtrey, ... Physical Review B—Condensed Matter and Materials Physics 83 (11), 115321, 2011	218	2011
Three-dimensional atom probe studies of an InxGa1− xN∕ GaN multiple quantum well structure: Assessment of possible indium clustering MJ Galtrey, RA Oliver, MJ Kappers, CJ Humphreys, DJ Stokes, PH Clifton, ... Applied physics letters 90 (6), 2007	207	2007
Dislocation nucleation near the critical thickness in GeSi/Si strained layers DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, JC Bean Philosophical Magazine A 59 (5), 1059-1073, 1989	199	1989
Chemical mapping and formation of V-defects in InGaN multiple quantum wells N Sharma, P Thomas, D Tricker, C Humphreys Applied Physics Letters 77 (9), 1274-1276, 2000	179	2000
Understanding x-ray diffraction of nonpolar gallium nitride films MA Moram, CF Johnston, JL Hollander, MJ Kappers, CJ Humphreys Journal of Applied Physics 105 (11), 2009	178	2009
InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys, S Yasin, JH Rice, ... Applied Physics Letters 83 (4), 755-757, 2003	178	2003
Dopant profiling with the scanning electron microscope—A study of Si SL Elliott, RF Broom, CJ Humphreys Journal of applied physics 91 (11), 9116-9122, 2002	177	2002
A dynamical theory for the contrast of perfect and imperfect crystals in the scanning electron microscope using backscattered electrons CJHPBH JP Spencer Philosophical Magazine 26, 193-213, 1972	166	1972

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