Direct and indirect band-to-band tunneling in germanium-based TFETs KH Kao, AS Verhulst, WG Vandenberghe, B Soree, G Groeseneken, ...
IEEE Transactions on Electron Devices 59 (2), 292-301, 2011
487 2011 Tunnel field-effect transistor without gate-drain overlap AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken
Applied Physics Letters 91 (5), 2007
482 2007 Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor AS Verhulst, B Sorée, D Leonelli, WG Vandenberghe, G Groeseneken
Journal of Applied Physics 107 (2), 2010
281 2010 Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates AS Verhulst, WG Vandenberghe, K Maex, S De Gendt, MM Heyns, ...
IEEE electron device letters 29 (12), 1398-1401, 2008
222 2008 Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken
Journal of Applied Physics 104 (6), 2008
169 2008 Optimization of gate-on-source-only tunnel FETs with counter-doped pockets KH Kao, AS Verhulst, WG Vandenberghe, B Soree, W Magnus, D Leonelli, ...
IEEE Transactions on Electron Devices 59 (8), 2070-2077, 2012
157 2012 Drain voltage dependent analytical model of tunnel field-effect transistors AS Verhulst, D Leonelli, R Rooyackers, G Groeseneken
Journal of Applied Physics 110 (2), 2011
149 2011 Fabrication and Analysis of a AM Walke, A Vandooren, R Rooyackers, D Leonelli, A Hikavyy, R Loo, ...
IEEE Transactions on Electron Devices 61 (3), 707-715, 2014
147 2014 Figure of merit for and identification of sub-60 mV/decade devices WG Vandenberghe, AS Verhulst, B Sorée, W Magnus, G Groeseneken, ...
Applied Physics Letters 102 (1), 2013
134 2013 Tunnel field effect transistor with improved subthreshold swing AS Verhulst
US Patent 8,304,843, 2012
127 2012 Analytical model for point and line tunneling in a tunnel field-effect transistor W Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus
2008 international conference on simulation of semiconductor processes and …, 2008
124 2008 Performance enhancement in multi gate tunneling field effect transistors by scaling the fin-width D Leonelli, A Vandooren, R Rooyackers, AS Verhulst, S De Gendt, ...
Japanese Journal of Applied Physics 49 (4S), 04DC10, 2010
117 2010 Analytical model for a tunnel field-effect transistor WG Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus
MELECON 2008-The 14th IEEE mediterranean electrotechnical conference, 923-928, 2008
114 2008 Method of manufacturing a complementary nanowire tunnel field effect transistor semiconductor device R Rooyackers, D Leonelli, A Vandooren, AS Verhulst, R Loo, S De Gendt
US Patent 8,415,209, 2013
101 2013 Advancing CMOS beyond the Si roadmap with Ge and III/V devices M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011
83 2011 Wavelength-sensitive detector with elongate nanostructures AS Verhulst, W Vandervorst
US Patent 7,598,482, 2009
83 2009 Tunnel field-effect transistor with gated tunnel barrier WG Vandenberghe, AS Verhulst
US Patent 8,120,115, 2012
79 2012 Quantum mechanical performance predictions of pnin versus pocketed line tunnel field-effect transistors D Verreck, AS Verhulst, KH Kao, WG Vandenberghe, K De Meyer, ...
IEEE transactions on electron devices 60 (7), 2128-2134, 2013
68 2013 Contrast reversal in scanning capacitance microscopy imaging R Stephenson, A Verhulst, P De Wolf, M Caymax, W Vandervorst
Applied physics letters 73 (18), 2597-2599, 1998
68 1998 InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature A Alian, Y Mols, CCM Bordallo, D Verreck, A Verhulst, A Vandooren, ...
Applied Physics Letters 109 (24), 2016
66 2016 
Guido Groesenekenimec and KU LeuvenEmail verificata su imec.be