| Electrical contacts to two-dimensional semiconductors A Allain, J Kang, K Banerjee, A Kis Nature materials 14 (12), 1195-1205, 2015 | 1741 | 2015 |
| Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors W Liu, J Kang, D Sarkar, Y Khatami, D Jena, K Banerjee Nano letters 13 (5), 1983-1990, 2013 | 1111 | 2013 |
| A subthermionic tunnel field-effect transistor with an atomically thin channel D Sarkar, X Xie, W Liu, W Cao, J Kang, Y Gong, S Kraemer, PM Ajayan, ... Nature 526 (7571), 91-95, 2015 | 1031 | 2015 |
| Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors J Kang, W Liu, D Sarkar, D Jena, K Banerjee Physical Review X 4 (3), 031005, 2014 | 954 | 2014 |
| High-performance MoS2 transistors with low-resistance molybdenum contacts J Kang, W Liu, K Banerjee Applied Physics Letters 104 (9), 2014 | 435 | 2014 |
| Functionalization of transition metal dichalcogenides with metallic nanoparticles: implications for doping and gas-sensing D Sarkar, X Xie, J Kang, H Zhang, W Liu, J Navarrete, M Moskovits, ... Nano letters 15 (5), 2852-2862, 2015 | 392 | 2015 |
| 2D semiconductor FETs—Projections and design for sub-10 nm VLSI W Cao, J Kang, D Sarkar, W Liu, K Banerjee IEEE transactions on electron devices 62 (11), 3459-3469, 2015 | 338 | 2015 |
| Surface functionalization of two-dimensional metal chalcogenides by Lewis acid–base chemistry S Lei, X Wang, B Li, J Kang, Y He, A George, L Ge, Y Gong, P Dong, Z Jin, ... Nature nanotechnology 11 (5), 465-471, 2016 | 252 | 2016 |
| A compact current–voltage model for 2D semiconductor based field-effect transistors considering interface traps, mobility degradation, and inefficient doping effect W Cao, J Kang, W Liu, K Banerjee IEEE Transactions on Electron Devices 61 (12), 4282-4290, 2014 | 181 | 2014 |
| Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors W Liu, D Sarkar, J Kang, W Cao, K Banerjee Acs Nano 9 (8), 7904-7912, 2015 | 178 | 2015 |
| Intercalation doped multilayer-graphene-nanoribbons for next-generation interconnects J Jiang, J Kang, W Cao, X Xie, H Zhang, JH Chu, W Liu, K Banerjee Nano letters 17 (3), 1482-1488, 2017 | 162 | 2017 |
| High-Performance Few-Layer-MoS2 Field-Effect-Transistor with Record Low Contact-Resistance W Liu, J Kang, W Cao, D Sarkar, Y Khatami, D Jane, K Banerjee IEEE International Electron Devices Meeting (IEDM), 19.4.1 - 19.4.4, 2013 | 148 | 2013 |
| Graphene and beyond-graphene 2D crystals for next-generation green electronics J Kang, W Cao, X Xie, D Sarkar, W Liu, K Banerjee Micro-and Nanotechnology Sensors, Systems, and Applications VI 9083, 20-26, 2014 | 140 | 2014 |
| Low-Frequency Noise in Bilayer MoS2 Transistor X Xie, D Sarkar, W Liu, J Kang, O Marinov, MJ Deen, K Banerjee ACS nano 8 (6), 5633-5640, 2014 | 118 | 2014 |
| On-chip intercalated-graphene inductors for next-generation radio frequency electronics J Kang, Y Matsumoto, X Li, J Jiang, X Xie, K Kawamoto, M Kenmoku, ... Nature Electronics 1 (1), 46-51, 2018 | 104 | 2018 |
| 2-D layered materials for next-generation electronics: Opportunities and challenges W Cao, J Jiang, X Xie, A Pal, JH Chu, J Kang, K Banerjee IEEE Transactions on Electron Devices 65 (10), 4109-4121, 2018 | 99 | 2018 |
| Proposal for all-graphene monolithic logic circuits J Kang, D Sarkar, Y Khatami, K Banerjee Applied Physics Letters 103 (8), 083113, 2013 | 81 | 2013 |
| A computational study of metal-contacts to beyond-graphene 2D semiconductor materials J Kang, D Sarkar, W Liu, D Jena, K Banerjee 2012 International Electron Devices Meeting, 17.4. 1-17.4. 4, 2012 | 81 | 2012 |
| Subthreshold-swing physics of tunnel field-effect transistors W Cao, D Sarkar, Y Khatami, J Kang, K Banerjee AIP Advances 4 (6), 2014 | 78 | 2014 |
| High-Performance Field-Effect-Transistors on Monolayer-WSe2 W Liu, W Cao, J Kang, K Banerjee ECS Transactions 58 (7), 281-285, 2013 | 61 | 2013 |
Kaustav BanerjeeUC Santa Barbara, Stanford University, UC BerkeleyEmail verificata su ece.ucsb.edu