| 300-mm monolithic silicon photonics foundry technology K Giewont, K Nummy, FA Anderson, J Ayala, T Barwicz, Y Bian, ... IEEE Journal of Selected Topics in Quantum Electronics 25 (5), 1-11, 2019 | 328 | 2019 |
| Extreme Environment Electronics J Cressler, A Mantooth | 305* | 2012 |
| Reliability wearout mechanisms in advanced CMOS technologies AW Strong, EY Wu, RP Vollertsen, J Sune, G La Rosa, TD Sullivan, ... John Wiley & Sons, 2009 | 274 | 2009 |
| Single-event upsets and multiple-bit upsets on a 45 nm SOI SRAM DF Heidel, PW Marshall, JA Pellish, KP Rodbell, KA LaBel, JR Schwank, ... IEEE Transactions on Nuclear Science 56 (6), 3499-3504, 2009 | 203 | 2009 |
| Bias Temperature Instability for Devices and Circuits T Grasser, S Rauch, et al. | 180 | 2013 |
| Review and reexamination of reliability effects related to NBTI-induced variations SE Rauch IEEE Trans. Device Mater. Reliab. 7 (4), 524-530, 2007 | 165 | 2007 |
| The energy-driven paradigm of NMOSFET hot-carrier effects SE Rauch, G LaRosa IEEE Transactions on Device and Materials Reliability 5 (4), 701-705, 2005 | 161 | 2005 |
| The energy-driven paradigm of NMOSFET hot-carrier effects SE Rauch, G LaRosa 2005 International Reliability Physics Symposium, 708-709, 2005 | 161 | 2005 |
| NBTI-channel hot carrier effects in PMOSFETs in advanced CMOS technologies G La Rosa, F Guarin, S Rauch, A Acovic, J Lukaitis, E Crabbe 1997 IEEE International Reliability Physics Symposium Proceedings. 35th …, 1997 | 122 | 1997 |
| Hot Carrier Degradation in Semiconductor Devices T Grasser, S Rauch, et al | 117 | 2014 |
| Role of ee scattering in the enhancement of channel hot carrier degradation of deep sub-micron NMOSFETs at high VGS conditions SE Rauch, GL Rosa, FJ Guarin IEEE Transactions of device and Material Reliability 1 (2), 113-119, 2001 | 117 | 2001 |
| The statistics of NBTI-induced VT and β mismatch shifts in pMOSFETs SE Rauch III Device and Materials Reliability, IEEE Transactions on 2 (4), 89-93, 2002 | 111* | 2002 |
| Ring oscillator design for MOSFET device reliability investigations and its use for in-line monitoring G La Rosa, F Guarin, K Kolvenbach, S Rauch US Patent 6,476,632, 2002 | 110 | 2002 |
| Impact of EE scattering to the hot carrier degradation of deep submicron NMOSFETs SE Rauch, FJ Guarin, G LaRosa IEEE Electron Device Letters 19 (12), 463-465, 1998 | 110 | 1998 |
| Impact of NBTI induced statistical variation to SRAM cell stability G La Rosa, WL Ng, S Rauch, R Wong, J Sudijono 2006 IEEE International Reliability Physics Symposium Proceedings, 274-282, 2006 | 67 | 2006 |
| A high-performance 0.08/spl mu/m CMOS L Su, S Subbanna, E Crabbe, P Agnello, E Nowak, R Schulz, S Rauch, ... 1996 Symposium on VLSI Technology. Digest of Technical Papers, 12-13, 1996 | 66 | 1996 |
| High performance 50 nm CMOS devices for microprocessor and embedded processor core applications SF Huang, CY Lin, YS Huang, T Schafbauer, M Eller, YC Cheng, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 54 | 2001 |
| CMOS hot carrier: From physics to end of life projections, and qualification S Rauch, GL Rosa International Reliability Physics Symposium (IRPS) Tutorial, 2010 | 37 | 2010 |
| A high performance 0.13/spl mu/m SOI CMOS technology with Cu interconnects and low-k BEOL dielectric P Smeys, V McGahay, I Yang, J Adkisson, K Beyer, O Bula, Z Chen, ... 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2000 | 36 | 2000 |
| Line monitoring of negative bias temperature instabilities by hole injection methods G La Rosa, FJ Guarin, SE Rauch III US Patent 6,521,469, 2003 | 33 | 2003 |
Fernando GuarinGlobal FoundriesEmail verificata su ieee.org