| The structural and luminescence properties of porous silicon AG Cullis, LT Canham, PDJ Calcott Journal of applied physics 82 (3), 909-965, 1997 | 3573 | 1997 |
| Visible light emission due to quantum size effects in highly porous crystalline silicon AG Cullis, LT Canham Nature 353 (6342), 335-338, 1991 | 1889 | 1991 |
| Hard-x-ray lensless imaging of extended objects JM Rodenburg, AC Hurst, AG Cullis, BR Dobson, F Pfeiffer, O Bunk, ... Physical review letters 98 (3), 034801, 2007 | 1012 | 2007 |
| An experimental and theoretical study of the formation and microstructure of porous silicon MIJ Beale, JD Benjamin, MJ Uren, NG Chew, AG Cullis Journal of Crystal Growth 73 (3), 622-636, 1985 | 802 | 1985 |
| Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots PW Fry, IE Itskevich, DJ Mowbray, MS Skolnick, JJ Finley, JA Barker, ... Physical review letters 84 (4), 733, 2000 | 716 | 2000 |
| Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation MO Thompson, GJ Galvin, JW Mayer, PS Peercy, JM Poate, DC Jacobson, ... Physical review letters 52 (26), 2360, 1984 | 679 | 1984 |
| Microstructure and formation mechanism of porous silicon MIJ Beale, NG Chew, MJ Uren, AG Cullis, JD Benjamin Applied Physics Letters 46 (1), 86-88, 1985 | 411 | 1985 |
| Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs T Walther, AG Cullis, DJ Norris, M Hopkinson Physical Review Letters 86 (11), 2381, 2001 | 334 | 2001 |
| Silicon melt, regrowth, and amorphization velocities during pulsed laser irradiation MO Thompson, JW Mayer, AG Cullis, HC Webber, NG Chew, JM Poate, ... Physical Review Letters 50 (12), 896, 1983 | 323 | 1983 |
| The growth of metastable, heteroepitaxial films of α-Sn by metal beam epitaxy RFC Farrow, DS Robertson, GM Williams, AG Cullis, GR Jones, IM Young, ... Journal of Crystal Growth 54 (3), 507-518, 1981 | 323 | 1981 |
| Transmission microscopy without lenses for objects of unlimited size JM Rodenburg, AC Hurst, AG Cullis Ultramicroscopy 107 (2-3), 227-231, 2007 | 306 | 2007 |
| Evolution of surface morphology and strain during SiGe epitaxy AJ Pidduck, DJ Robbins, AG Cullis, WY Leong, AM Pitt Thin Solid Films 222 (1-2), 78-84, 1992 | 269 | 1992 |
| Luminescent anodized silicon aerocrystal networks prepared by supercritical drying LT Canham, AG Cullis, C Pickering, OD Dosser, TI Cox, TP Lynch Nature 368 (6467), 133-135, 1994 | 254 | 1994 |
| The characteristics of strain-modulated surface undulations formed upon epitaxial Si1− xGex alloy layers on Si AG Cullis, DJ Robbins, AJ Pidduck, PW Smith Journal of Crystal Growth 123 (3-4), 333-343, 1992 | 240 | 1992 |
| Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots MJ Steer, DJ Mowbray, WR Tribe, MS Skolnick, MD Sturge, M Hopkinson, ... Physical Review B 54 (24), 17738, 1996 | 228 | 1996 |
| Transitions to defective crystal and the amorphous state induced in elemental Si by laser quenching AG Cullis, HC Webber, NG Chew, JM Poate, P Baeri Physical review letters 49 (3), 219, 1982 | 198 | 1982 |
| Correlation of the structural and optical properties of luminescent, highly oxidized porous silicon AG Cullis, LT Canham, GM Williams, PW Smith, OD Dosser Journal of applied physics 75 (1), 493-501, 1994 | 190 | 1994 |
| Arsenic precipitation at dislocations in GaAs substrate material AG Cullis, PD Augustus, DJ Stirland Journal of Applied Physics 51 (5), 2556-2560, 1980 | 184 | 1980 |
| Phase transitions in amorphous Si produced by rapid heating P Baeri, G Foti, JM Poate, AG Cullis Physical Review Letters 45 (25), 2036, 1980 | 183 | 1980 |
| A device for laser beam diffusion and homogenisation AG Cullis, HC Webber, P Bailey Journal of Physics E: Scientific Instruments 12 (8), 688, 1979 | 182 | 1979 |
