Articoli con mandati relativi all'accesso pubblico - Qing LuoUlteriori informazioni
Non disponibili pubblicamente: 55
Improvement of endurance in HZO-based ferroelectric capacitor using Ru electrode
R Cao, B Song, D Shang, Y Yang, Q Luo, S Wu, Y Li, Y Wang, H Lv, Q Liu, ...
IEEE Electron Device Letters 40 (11), 1744-1747, 2019
Mandati: Chinese Academy of Sciences, National Natural Science Foundation of China
Full imitation of synaptic metaplasticity based on memristor devices
Q Wu, H Wang, Q Luo, W Banerjee, J Cao, X Zhang, F Wu, Q Liu, L Li, ...
Nanoscale 10 (13), 5875-5881, 2018
Mandati: Chinese Academy of Sciences, National Natural Science Foundation of China
BEOL based RRAM with one extra-mask for low cost, highly reliable embedded application in 28 nm node and beyond
H Lv, X Xu, P Yuan, D Dong, T Gong, J Liu, Z Yu, P Huang, K Zhang, ...
2017 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2017
Mandati: National Natural Science Foundation of China
Hybrid 1T e-DRAM and e-NVM realized in one 10 nm node ferro FinFET device with charge trapping and domain switching effects
Q Luo, T Gong, Y Cheng, Q Zhang, H Yu, J Yu, H Ma, X Xu, K Huang, ...
2018 IEEE International Electron Devices Meeting (IEDM), 2.6. 1-2.6. 4, 2018
Mandati: National Natural Science Foundation of China
Deep Insights into the Failure Mechanisms in Field-cycled Ferroelectric Hf0.5Zr0.5O2 Thin Film: TDDB Characterizations and First-Principles Calculations
W Wei, W Zhang, F Wang, X Ma, Q Wang, P Sang, X Zhan, Y Li, L Tai, ...
2020 IEEE International Electron Devices Meeting (IEDM), 39.6. 1-39.6. 4, 2020
Mandati: National Natural Science Foundation of China
Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films
Q Luo, H Ma, H Su, KH Xue, R Cao, Z Gao, J Yu, T Gong, X Xu, J Yin, ...
IEEE Electron Device Letters 40 (4), 570-573, 2019
Mandati: National Natural Science Foundation of China
A Self-Rectifying Resistive Switching Device Based on HfO2/TaO Bilayer Structure
H Ma, X Zhang, F Wu, Q Luo, T Gong, P Yuan, X Xu, Y Liu, S Zhao, ...
IEEE Transactions on Electron Devices 66 (2), 924-928, 2018
Mandati: Chinese Academy of Sciences, National Natural Science Foundation of China
Nb1-xO2 based Universal Selector with Ultra-high Endurance (>1012), high speed (10ns) and Excellent Vth Stability
Q Luo, J Yu, X Zhang, KH Xue, JH Yuan, Y Cheng, T Gong, H Lv, X Xu, ...
2019 Symposium on VLSI Technology, T236-T237, 2019
Mandati: Chinese Academy of Sciences, National Natural Science Foundation of China
Memory Switching and Threshold Switching in a 3D Nanoscaled NbOX System
Q Luo, X Zhang, J Yu, W Wang, T Gong, X Xu, J Yin, P Yuan, L Tai, ...
IEEE Electron Device Letters 40 (5), 718-721, 2019
Mandati: National Natural Science Foundation of China
105× Endurance Improvement of FE-HZO by an Innovative Rejuvenation Method for 1z Node NV-DRAM Applications
T Gong, L Tao, J Li, Y Cheng, Y Xu, W Wei, P Jiang, P Yuan, Y Wang, ...
2021 Symposium on VLSI Technology, 1-2, 2021
Mandati: Chinese Academy of Sciences, National Natural Science Foundation of China
Role of Oxygen Vacancies in Electric Field Cycling Behaviors of Ferroelectric Hafnium Oxide
C Liu, F Liu, Q Luo, P Huang, XX Xu, HB Lv, YD Zhao, XY Liu, JF Kang
2018 IEEE International Electron Devices Meeting (IEDM), 16.4. 1-16.4. 4, 2018
Mandati: National Natural Science Foundation of China
Switching pathway-dependent strain-effects on the ferroelectric properties and structural deformations in orthorhombic HfO2
W Wei, G Zhao, XP Zhan, W Zhang, P Sang, Q Wang, L Tai, Q Luo, Y Li, ...
Journal of Applied Physics 131 (15), 2022
Mandati: Chinese Academy of Sciences, National Natural Science Foundation of China
Improved Endurance of Hf₀.₅Zr₀.₅O2-Based Ferroelectric Capacitor Through Optimizing the Ti–N Ratio in TiN Electrode
Z Dang, S Lv, Z Gao, M Chen, Y Xu, P Jiang, Y Ding, P Yuan, Y Wang, ...
IEEE Electron Device Letters 43 (4), 561-564, 2022
Mandati: Chinese Academy of Sciences, National Natural Science Foundation of China
40× retention improvement by eliminating resistance relaxation with high temperature forming in 28 nm RRAM chip
X Xu, L Tai, T Gong, J Yin, P Huang, J Yu, Q Luo, J Liu, Z Yu, X Zhu, ...
2018 IEEE International Electron Devices Meeting (IEDM), 20.1. 1-20.1. 4, 2018
Mandati: National Natural Science Foundation of China
Flexible Hf0. 5Zr0. 5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility
Y Chen, Y Yang, P Yuan, P Jiang, Y Wang, Y Xu, S Lv, Y Ding, Z Dang, ...
Nano Research 15 (4), 2913-2918, 2022
Mandati: Chinese Academy of Sciences, National Natural Science Foundation of China
First demonstration of OxRRAM integration on 14nm FinFet platform and scaling potential analysis towards sub-10nm node
X Xu, J Yu, T Gong, J Yang, J Yin, Q Luo, J Liu, Z Yu, Q Liu, H Lv, M Liu
2020 IEEE International Electron Devices Meeting (IEDM), 24.3. 1-24.3. 4, 2020
Mandati: Chinese Academy of Sciences, National Natural Science Foundation of China
Demonstration of 3D convolution kernel function based on 8-layer 3D vertical resistive random access memory
Q Huo, R Song, D Lei, Q Luo, Z Wu, Z Wu, X Zhao, F Zhang, L Li, M Liu
IEEE Electron Device Letters 41 (3), 497-500, 2020
Mandati: National Natural Science Foundation of China
Unified 0.75pJ/Bit TRNG and Attack Resilient 2F2/Bit PUF for Robust Hardware Security Solutions with 4-layer Stacking 3D NbOx Threshold Switching Array
Q Ding, H Jiang, J Li, C Liu, J Yu, P Chen, Y Zhao, Y Ding, T Gong, ...
2021 IEEE International Electron Devices Meeting (IEDM), 39.2. 1-39.2. 4, 2021
Mandati: Chinese Academy of Sciences, National Natural Science Foundation of China
A 9Mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier
J Yang, Q Luo, X Xue, H Jiang, Q Wu, Z Han, Y Cao, Y Han, C Dou, H Lv, ...
2023 IEEE International Solid-State Circuits Conference (ISSCC), 1-3, 2023
Mandati: Chinese Academy of Sciences, National Natural Science Foundation of China
A polarization-switching, charge-trapping, modulated arithmetic logic unit for in-memory computing based on ferroelectric fin field-effect transistors
Z Zhang, Y Luo, Y Cui, H Yang, Q Zhang, G Xu, Z Wu, J Xiang, Q Liu, ...
ACS Applied Materials & Interfaces 14 (5), 6967-6976, 2022
Mandati: Chinese Academy of Sciences, National Natural Science Foundation of China
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