| An ultralow-voltage energy-efficient level shifter M Lanuzza, F Crupi, S Rao, R De Rose, S Strangio, G Iannaccone IEEE Transactions on Circuits and Systems II: Express Briefs 64 (1), 61-65, 2016 | 109 | 2016 |
| Impact of TFET unidirectionality and ambipolarity on the performance of 6T SRAM cells S Strangio, P Palestri, D Esseni, L Selmi, F Crupi, S Richter, QT Zhao, ... IEEE Journal of the Electron Devices Society 3 (3), 223-232, 2015 | 87 | 2015 |
| Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability N Raghavan, R Degraeve, A Fantini, L Goux, S Strangio, B Govoreanu, ... 2013 IEEE International Reliability Physics Symposium (IRPS), 5E. 3.1-5E. 3.7, 2013 | 84 | 2013 |
| Power electronics based on wide-bandgap semiconductors: Opportunities and challenges G Iannaccone, C Sbrana, I Morelli, S Strangio IEEE Access 9, 139446-139456, 2021 | 82 | 2021 |
| Digital and analog TFET circuits: Design and benchmark S Strangio, F Settino, P Palestri, M Lanuzza, F Crupi, D Esseni, L Selmi Solid-State Electronics 146, 50-65, 2018 | 76 | 2018 |
| Mixed tunnel-FET/MOSFET level shifters: A new proposal to extend the tunnel-FET application domain M Lanuzza, S Strangio, F Crupi, P Palestri, D Esseni IEEE Transactions on Electron Devices 62 (12), 3973-3979, 2015 | 76 | 2015 |
| Understanding the potential and limitations of tunnel FETs for low-voltage analog/mixed-signal circuits F Settino, M Lanuzza, S Strangio, F Crupi, P Palestri, D Esseni, L Selmi IEEE Transactions on Electron Devices 64 (6), 2736-2743, 2017 | 69 | 2017 |
| Assessment of InAs/AlGaSb tunnel-FET virtual technology platform for low-power digital circuits S Strangio, P Palestri, M Lanuzza, F Crupi, D Esseni, L Selmi IEEE Transactions on Electron Devices 63 (7), 2749-2756, 2016 | 59 | 2016 |
| Understanding of the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation L Goux, A Fantini, R Degraeve, N Raghavan, R Nigon, S Strangio, G Kar, ... 2013 Symposium on VLSI Technology, T162-T163, 2013 | 49 | 2013 |
| Strained silicon complementary TFET SRAM: Experimental demonstration and simulations GV Luong, S Strangio, AT Tiedemann, P Bernardy, S Trellenkamp, ... IEEE journal of the Electron Devices Society 6, 1033-1040, 2018 | 38 | 2018 |
| Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages GV Luong, S Strangio, A Tiedemannn, S Lenk, S Trellenkamp, ... Solid-State Electronics 115, 152-159, 2016 | 36 | 2016 |
| Low frequency noise and gate bias instability in normally OFF AlGaN/GaN HEMTs F Crupi, P Magnone, S Strangio, F Iucolano, G Meneghesso IEEE Transactions on Electron Devices 63 (5), 2219-2222, 2016 | 34 | 2016 |
| On the bipolar resistive-switching characteristics of Al2O3-and HfO2-based memory cells operated in the soft-breakdown regime L Goux, N Raghavan, A Fantini, R Nigon, S Strangio, R Degraeve, G Kar, ... Journal of Applied Physics 116 (13), 2014 | 30 | 2014 |
| Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2 G Migliato Marega, Z Wang, M Paliy, G Giusi, S Strangio, F Castiglione, ... ACS nano 16 (3), 3684-3694, 2022 | 29 | 2022 |
| A 0.05 mm², 350 mv, 14 nw fully-integrated temperature sensor in 180-nm cmos B Zambrano, E Garzón, S Strangio, F Crupi, M Lanuzza IEEE Transactions on Circuits and Systems II: Express Briefs 69 (3), 749-753, 2021 | 27 | 2021 |
| Analog vector-matrix multiplier based on programmable current mirrors for neural network integrated circuits M Paliy, S Strangio, P Ruiu, T Rizzo, G Iannaccone IEEE Access 8, 203525-203537, 2020 | 26 | 2020 |
| Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits S Strangio, P Palestri, M Lanuzza, D Esseni, F Crupi, L Selmi Solid-State Electronics 128, 37-42, 2017 | 21 | 2017 |
| Ultralow voltage finFET-versus TFET-based STT-MRAM cells for IoT applications E Garzón, M Lanuzza, R Taco, S Strangio Electronics 10 (15), 1756, 2021 | 19 | 2021 |
| A low-voltage, low-power reconfigurable current-mode softmax circuit for analog neural networks M Vatalaro, T Moposita, S Strangio, L Trojman, A Vladimirescu, ... Electronics 10 (9), 1004, 2021 | 15 | 2021 |
| A 0.6 v–1.8 v compact temperature sensor with 0.24 c resolution,±1.4 c inaccuracy and 1.06 nj per conversion B Zambrano, E Garzón, S Strangio, G Iannaccone, M Lanuzza IEEE Sensors Journal 22 (12), 11480-11488, 2022 | 12 | 2022 |
Felice CrupiDIMES, Università della CalabriaEmail verificata su unical.it