| Atomic layer deposition of high dielectric constant gate dielectrics M Metz, C Boyd, M Kuhn, S Datta, J Kavalieros, M Doczy, J Brask, R Chau US Patent App. 10/943,693, 2006 | 497 | 2006 |
| Intrinsic defects on a TiO2 (110)(1× 1) surface and their reaction with oxygen: a scanning tunneling microscopy study U Diebold, J Lehman, T Mahmoud, M Kuhn, G Leonardelli, W Hebenstreit, ... Surface science 411 (1-2), 137-153, 1998 | 476 | 1998 |
| Two-dimensional condensation for uniaxially strained semiconductor fins JT Kavalieros, NM Zelick, BY Jin, M Kuhn, SM Cea US Patent 8,211,772, 2012 | 191 | 2012 |
| Reaction of H2S and S2 with Metal/Oxide Surfaces: Band-Gap Size and Chemical Reactivity JA Rodriguez, S Chaturvedi, M Kuhn, J Hrbek The Journal of Physical Chemistry B 102 (28), 5511-5519, 1998 | 180 | 1998 |
| Charge redistribution and electronic behavior in a series of Au-Cu alloys M Kuhn, TK Sham Physical Review B 49 (3), 1647, 1994 | 170 | 1994 |
| BTI reliability of 45 nm high-K+ metal-gate process technology S Pae, M Agostinelli, M Brazier, R Chau, G Dewey, T Ghani, M Hattendorf, ... 2008 IEEE International Reliability Physics Symposium, 352-357, 2008 | 155 | 2008 |
| Surface structure and morphology of Mg-segregated epitaxial Fe 3 O 4 (001) thin films on MgO (001) JF Anderson, M Kuhn, U Diebold, K Shaw, P Stoyanov, D Lind Physical Review B 56 (15), 9902, 1997 | 126 | 1997 |
| Charge redistribution in Au-Ag alloys from a local perspective CC Tyson, A Bzowski, P Kristof, M Kuhn, R Sammynaiken, TK Sham Physical Review B 45 (16), 8924, 1992 | 115 | 1992 |
| Past, present and future: SiGe and CMOS transistor scaling KJ Kuhn, A Murthy, R Kotlyar, M Kuhn ECS Transactions 33 (6), 3, 2010 | 111 | 2010 |
| Method for making a semiconductor device having a high-k gate dielectric ML Doczy, G Dewey, S Datta, S Pae, JK Brask, J Kavalieros, MV Metz, ... US Patent 7,074,680, 2006 | 102 | 2006 |
| Reaction of SO2 with ZnO (0001̄)–O and ZnO powders: photoemission and XANES studies on the formation of SO3 and SO4 JA Rodriguez, T Jirsak, S Chaturvedi, M Kuhn Surface science 442 (3), 400-412, 1999 | 95 | 1999 |
| Growth, structure and thermal properties of chromium oxide films on Pt (111) L Zhang, M Kuhn, U Diebold Surface science 375 (1), 1-12, 1997 | 93 | 1997 |
| The bonding of sulfur to a Pt (111) surface: photoemission and molecular orbital studies JA Rodriguez, M Kuhn, J Hrbek Chemical physics letters 251 (1-2), 13-19, 1996 | 91 | 1996 |
| Electronic and Chemical Properties of Ag/Pt (111) and Cu/Pt (111) Surfaces: Importance of Changes in the d Electron Populations JA Rodriguez, M Kuhn The Journal of Physical Chemistry 98 (44), 11251-11255, 1994 | 89 | 1994 |
| Studies on the Behavior of Mixed-Metal Oxides and Desulfurization: Reaction of H2S and SO2 with Cr2O3(0001), MgO(100), and CrxMg1-xO(100) JA Rodriguez, T Jirsak, M Pérez, S Chaturvedi, M Kuhn, L González, ... Journal of the American Chemical Society 122 (49), 12362-12370, 2000 | 84 | 2000 |
| Interaction of silver, cesium, and zinc with alumina surfaces: thermal desorption and photoemission studies JA Rodriguez, M Kuhn, J Hrbek The Journal of Physical Chemistry 100 (46), 18240-18248, 1996 | 82 | 1996 |
| Chemical and electronic properties of Pt in bimetallic surfaces: Photoemission and CO‐chemisorption studies for Zn/Pt (111) JA Rodriguez, M Kuhn The Journal of chemical physics 102 (10), 4279-4289, 1995 | 82 | 1995 |
| Electronic structure of ordered and disordered Cu 3 Au: The behavior of the Au 5d bands TK Sham, YM Yiu, M Kuhn, KH Tan Physical Review B 41 (17), 11881, 1990 | 76 | 1990 |
| Method for making a semiconductor device having a metal gate electrode R Chau, M Doczy, M Kuhn US Patent 6,890,807, 2005 | 74 | 2005 |
| Interaction of zinc with transition-metal surfaces: electronic and chemical perturbations induced by bimetallic bonding JA Rodriguez, M Kuhn The Journal of Physical Chemistry 100 (1), 381-389, 1996 | 70 | 1996 |
T. K. ShamWestern University (University of Western Ontario)Email verificata su uwo.ca
