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Mondol Anik Kumar
Mondol Anik Kumar
Graduate Research Assistant, University of Alabama in Huntsville
Email verificata su uah.edu
Titolo
Citata da
Citata da
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Understanding and variability of lateral charge migration in 3D CT-NAND flash with and without band-gap engineered barriers
A Padovani, M Pesic, MA Kumar, P Blomme, A Subirats, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2019
142019
Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective
A Padovani, M Pesic, F Nardi, V Milo, L Larcher, MA Kumar, MZ Baten
2022 IEEE International Reliability Physics Symposium (IRPS), 3C. 4-1-3C. 4-10, 2022
92022
Analysis and Simulation of Interface Quality and Defect Induced Variability in MgO Spin-Transfer Torque Magnetic RAMs
B Sikder, JH Lim, MA Kumar, A Padovani, M Haverty, U Kamal, ...
IEEE Electron Device Letters 42 (1), 34-37, 2020
82020
Total-Ionizing-Dose Effects on Threshold Voltage Distribution of 64-Layer 3D NAND Memories
MA Kumar, M Raquibuzzaman, M Buddhanoy, M Wasiolek, K Hattar, ...
2022 IEEE Radiation Effects Data Workshop (REDW)(in conjunction with 2022 …, 2022
52022
Origin of post-irradiation Vth-shift variability in 3D-NAND memory array
MA Kumar, M Raquibuzzaman, M Buddhanoy, T Boykin, B Ray
IEEE Transactions on Nuclear Science, 2023
22023
Pulse optimization and device engineering of 3D charge-trap flash for synaptic operation
M Anik Kumar, A Padovani, L Larcher, SM Raiyan Chowdhury, ...
Journal of Applied Physics 132 (11), 114501, 2022
22022
Cross-Temperature Reliability of 3D NAND: Cell-to-Cell Variability Analysis and Countermeasure
MA Kumar, B Ray
2024 IEEE International Reliability Physics Symposium (IRPS), P25. MR-1-P25 …, 2024
12024
Towards Improving Ionizing Radiation Tolerance of 3-D NAND Flash Memory
B Ray, M Buddhanoy, MA Kumar
2023 IEEE International Memory Workshop (IMW), 1-4, 2023
12023
Total-Ionizing-Dose Effects on Commercial 3-D NAND Flash Memory Chips
MA Kumar
The University of Alabama in Huntsville, 2023
2023
Statistical Simulation to Predict Variability of TANOS Program/Erase Characteristics for Non-Volatile Memory Applications
MZ Baten, MA Kumar, A Padovani, L Larcher, D Pramanik
2019 Electron Devices Technology and Manufacturing Conference (EDTM), 203-205, 2019
2019
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