P.M. Lenahan

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John F. Conley, Jr.Professor of Electrical Engineering and Computer Science, Oregon State UniversityEmail verificata su eecs.oregonstate.edu
Aivars LelisARLEmail verificata su mail.mil
Corey CochraneJet Propulsion Laboratory, California Institute of TechnologyEmail verificata su jpl.nasa.gov
Mark A. AndersBroadcomEmail verificata su broadcom.com
Sean KingPrincipal EngineerEmail verificata su intel.com
Brad BittelEmail verificata su intel.com
Jerzy KanickiProfessor of EECS, University of MichiganEmail verificata su eecs.umich.edu
James P. AshtonReliability | High Frequency Technology Center | Keysight TechnologiesEmail verificata su keysight.com
Stephen J MoximNational Institute of Standards and TechnologyEmail verificata su nist.gov
Michael E. FlattéUniversity of IowaEmail verificata su mailaps.org
Nicholas J HarmonAssistant Professor, Coastal Carolina UniversityEmail verificata su coastal.edu
C Jeffrey BrinkerThe University of New MexicoEmail verificata su unm.edu
Chadwin D. YoungUniversity of Texas at DallasEmail verificata su utdallas.edu
Michael J MutchApplied MaterialsEmail verificata su amat.com
Elias B. FrantzReliability Lab Research & Development EngineerEmail verificata su intel.com
David J. MeyerNaval Research LaboratoryEmail verificata su nrl.navy.mil
David J. MichalakIntel CorporationEmail verificata su intel.com
Sigurd WagnerElectrical and Computer Engineering, Princeton UniversityEmail verificata su princeton.edu
John RobertsonProfessor of Electronics, University of CambridgeEmail verificata su eng.cam.ac.uk

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P.M. Lenahan

Distinguished Professor of Engineering Science and Mecahnics and Co-Chair, Inter-College Graduate

Email verificata su engr.psu.edu

electron paramagnetic resonance applied physics solid state electronics electronic materials and devices


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Hole traps and trivalent silicon centers in metal/oxide/silicon devices PM Lenahan, PV Dressendorfer Journal of Applied Physics 55 (10), 3495-3499, 1984	881	1984
What can electron paramagnetic resonance tell us about the system? PM Lenahan, JF Conley Jr Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998	444	1998
Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study DT Krick, PM Lenahan, J Kanicki Journal of applied physics 64 (7), 3558-3563, 1988	212	1988
The effect of interfacial layer properties on the performance of Hf-based gate stack devices G Bersuker, CS Park, J Barnett, PS Lysaght, PD Kirsch, CD Young, ... Journal of Applied Physics 100 (9), 2006	196	2006
Electron‐spin‐resonance study of radiation‐induced paramagnetic defects in oxides grown on (100) silicon substrates YY Kim, PM Lenahan Journal of applied physics 64 (7), 3551-3557, 1988	190	1988
First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride WL Warren, PM Lenahan, SE Curry Physical review letters 65 (2), 207, 1990	186	1990
Thermal-equilibrium defect processes in hydrogenated amorphous silicon ZE Smith, S Aljishi, D Slobodin, V Chu, S Wagner, PM Lenahan, RR Arya, ... Physical review letters 57 (19), 2450, 1986	183	1986
An electron spin resonance study of radiation‐induced electrically active paramagnetic centers at the Si/SiO2 interface PM Lenahan, PV Dressendorfer Journal of Applied Physics 54 (3), 1457-1460, 1983	183	1983
Effect of bias on radiation‐induced paramagnetic defects at the silicon‐silicon dioxide interface PM Lenahan, PV Dressendorfer Applied Physics Letters 41 (6), 542-544, 1982	169	1982
Atomic-scale defects involved in the negative-bias temperature instability JP Campbell, PM Lenahan, CJ Cochrane, AT Krishnan, S Krishnan IEEE Transactions on Device and Materials Reliability 7 (4), 540-557, 2007	136	2007
Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si AY Kang, PM Lenahan, JF Conley Jr Applied physics letters 83 (16), 3407-3409, 2003	135	2003
Paramagnetic trivalent silicon centers in gamma irradiated metal‐oxide‐silicon structures PM Lenahan, PV Dressendorfer Applied physics letters 44 (1), 96-98, 1984	135	1984
First observation of the ²⁹Si hyperfine spectra of silicon dangling bond centers in silicon nitride PM Lenahan, SE Curry Applied physics letters 56 (2), 157-159, 1990	134	1990
An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors CJ Cochrane, PM Lenahan, AJ Lelis Journal of Applied Physics 109 (1), 2011	126	2011
Nature of the E′ deep hole trap in metal‐oxide‐semiconductor oxides HS Witham, PM Lenahan Applied physics letters 51 (13), 1007-1009, 1987	123	1987
Nature of the dominant deep trap in amorphous silicon nitride DT Krick, PM Lenahan, J Kanicki Physical Review B 38 (12), 8226, 1988	122	1988
Density of states of interface trap centers JP Campbell, PM Lenahan Applied physics letters 80 (11), 1945-1947, 2002	121	2002
Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitride WL Warren, PM Lenahan Physical Review B 42 (3), 1773, 1990	121	1990
A spin dependent recombination study of radiation induced defects at and near the Si/SiO/sub 2/interface MA Jupina, PM Lenahan IEEE Transactions on Nuclear Science 36 (6), 1800-1807, 1989	112	1989
Electron spin resonance evidence that E'/sub/spl gamma//centers can behave as switching oxide traps JF Conley, PM Lenahan, AJ Lelis, TR Oldham IEEE Transactions on Nuclear Science 42 (6), 1744-1749, 1995	110	1995

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