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Dr. Deepak Kumar Panda
Dr. Deepak Kumar Panda
Associate Professor in ECE, Amrita Vishwa Vidyapeetham, Amaravati Campus
Email verificata su av.amrita.edu - Home page
Titolo
Citata da
Citata da
Anno
The dawn of Ga2O3 HEMTs for high power electronics-A review
R Singh, TR Lenka, DK Panda, RT Velpula, B Jain, HQT Bui, HPT Nguyen
Materials Science in Semiconductor Processing 119, 105216, 2020
1402020
A comprehensive review on tunnel field-effect transistor (TFET) based biosensors: recent advances and future prospects on device structure and sensitivity
NN Reddy, DK Panda
Silicon 13 (9), 3085-3100, 2021
852021
A comprehensive review on high electron mobility transistor (HEMT) Based biosensors: recent advances and future prospects and its comparison with Si-based biosensor
V Hemaja, DK Panda
Silicon 14 (5), 1873-1886, 2022
422022
Next generation 2D material molybdenum disulfide (MoS2): properties, applications and challenges
VP Kumar, DK Panda
ECS Journal of Solid State Science and Technology 11 (3), 033012, 2022
392022
A comprehensive review on FinFET in terms of its device structure and performance matrices
MN Reddy, DK Panda
Silicon 14 (18), 12015-12030, 2022
312022
Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET
R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya
International Journal of RF and Microwave Computer‐Aided Engineering 31 (4 …, 2021
302021
Nanowire gate all around-TFET-based biosensor by considering ambipolar transport
NN Reddy, DK Panda
Applied Physics A 127 (9), 682, 2021
292021
Rapid detection of biomolecules in a junction less tunnel field-effect transistor (JL-TFET) biosensor
RB Peesa, DK Panda
Silicon 14 (4), 1705-1711, 2022
252022
Simulation study of dielectric modulated dual material gate TFET based biosensor by considering ambipolar conduction
NN Reddy, DK Panda
Silicon 13 (12), 4545-4551, 2021
252021
Modelling and simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate lengths
G Amarnath, DK Panda, TR Lenka
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2018
252018
Toward a more renewable energy-based LFC under random packet transmissions and delays with stochastic generation and demand
DK Panda, S Das, S Townley
IEEE Transactions on Automation Science and Engineering 19 (2), 1217-1232, 2020
242020
RF with linearity and non-linearity parameter analysis of gate all around negative capacitance junction less FET (GAA-NC-JLFET) for different ferroelectric thickness
P Raut, U Nanda, DK Panda
Physica Scripta 97 (10), 105809, 2022
232022
Analytical modelling for surface potential of dual material gate overlapped-on-drain TFET (DM-DMG-TFET) for label-free biosensing application
NN Reddy, DK Panda, R Saha
AEU-International Journal of Electronics and Communications 151, 154225, 2022
232022
Microwave frequency small‐signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT
G Amarnath, DK Panda, TR Lenka
International Journal of RF and Microwave Computer‐Aided Engineering 28 (2 …, 2018
232018
Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study
DK Panda, R Singh, TR Lenka, TT Pham, RT Velpula, B Jain, HQT Bui, ...
IET Circuits, Devices & Systems 14 (7), 1018-1025, 2020
212020
Performance analysis of Z‐shaped gate dielectric modulated (DM) tunnel field‐effect transistor‐(TFET) based biosensor with extended horizontal N+ pocket
NN Reddy, DK Panda
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2021
202021
Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications
DK Panda, TR Lenka
Journal of Semiconductor 38 (6), 2017
202017
DC and RF/analog parameters in Ge‐source split drain‐ZHP‐TFET: drain and pocket engineering technique
R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2022
192022
Review-next generation 2D material molybdenum disulfide (MoS2): Properties, applications and challenges. ECS J
VP Kumar, DK Panda
Solid State Sci. Technol 11 (3), 033012, 2022
192022
Recent trends on junction-less field effect transistors in terms of device topology, modeling, and application
P Raut, U Nanda, DK Panda
ECS Journal of Solid State Science and Technology 12 (3), 031010, 2023
182023
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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