| Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures FCP Massabuau, SL Sahonta, L Trinh-Xuan, S Rhode, TJ Puchtler, ... Applied Physics Letters 101 (21), 2012 | 108 | 2012 |
| Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions S Hammersley, MJ Kappers, FCP Massabuau, SL Sahonta, P Dawson, ... Applied Physics Letters 107 (13), 2015 | 82 | 2015 |
| X-ray diffraction analysis of cubic zincblende III-nitrides M Frentrup, LY Lee, SL Sahonta, MJ Kappers, F Massabuau, P Gupta, ... Journal of Physics D: Applied Physics 50 (43), 433002, 2017 | 75 | 2017 |
| The effects of Si doping on dislocation movement and tensile stress in GaN films MA Moram, MJ Kappers, F Massabuau, RA Oliver, CJ Humphreys Journal of Applied Physics 109 (7), 2011 | 75 | 2011 |
| The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem FCP Massabuau, MJ Davies, F Oehler, SK Pamenter, EJ Thrush, ... Applied Physics Letters 105 (11), 2014 | 71 | 2014 |
| The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes RA Oliver, FCP Massabuau, MJ Kappers, WA Phillips, EJ Thrush, ... Applied Physics Letters 103 (14), 2013 | 70 | 2013 |
| A peeling approach for integrated manufacturing of large monolayer h-BN crystals R Wang, DG Purdie, Y Fan, FCP Massabuau, P Braeuninger-Weimer, ... ACS nano 13 (2), 2114-2126, 2019 | 62 | 2019 |
| Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography F Tang, T Zhu, F Oehler, WY Fu, JT Griffiths, FCP Massabuau, ... Applied Physics Letters 106 (7), 2015 | 62 | 2015 |
| Thick, adherent diamond films on AlN with low thermal barrier resistance S Mandal, C Yuan, F Massabuau, JW Pomeroy, J Cuenca, H Bland, ... ACS applied materials & interfaces 11 (43), 40826-40834, 2019 | 61 | 2019 |
| Carrier localization in the vicinity of dislocations in InGaN F Massabuau, P Chen, MK Horton, SL Rhode, CX Ren, TJ O'Hanlon, ... Journal of Applied Physics 121 (1), 2017 | 58 | 2017 |
| Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN EJW Smith, AH Piracha, D Field, JW Pomeroy, GR Mackenzie, Z Abdallah, ... Carbon 167, 620-626, 2020 | 56 | 2020 |
| α-Ga2O3 grown by low temperature atomic layer deposition on sapphire JW Roberts, JC Jarman, DN Johnstone, PA Midgley, PR Chalker, ... Journal of Crystal Growth 487, 23-27, 2018 | 55 | 2018 |
| Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition JW Roberts, PR Chalker, B Ding, RA Oliver, JT Gibbon, LAH Jones, ... Journal of Crystal Growth 528, 125254, 2019 | 54 | 2019 |
| Structure and strain relaxation effects of defects in InxGa1− xN epilayers SL Rhode, WY Fu, MA Moram, FCP Massabuau, MJ Kappers, ... Journal of Applied Physics 116 (10), 2014 | 52 | 2014 |
| Crystalline interlayers for reducing the effective thermal boundary resistance in GaN-on-diamond DE Field, JA Cuenca, M Smith, SM Fairclough, FCP Massabuau, ... ACS Applied Materials & Interfaces 12 (48), 54138-54145, 2020 | 51 | 2020 |
| Atomic layer deposited α-Ga2O3 solar-blind photodetectors J Moloney, O Tesh, M Singh, JW Roberts, JC Jarman, LC Lee, TN Huq, ... Journal of Physics D: Applied Physics 52 (47), 475101, 2019 | 47 | 2019 |
| Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells FCP Massabuau, L Trinh-Xuan, D Lodié, EJ Thrush, D Zhu, F Oehler, ... Journal of Applied Physics 113 (7), 2013 | 40 | 2013 |
| Dislocations in AlGaN: Core structure, atom segregation, and optical properties FCP Massabuau, SL Rhode, MK Horton, TJ O’Hanlon, A Kovács, ... Nano letters 17 (8), 4846-4852, 2017 | 39 | 2017 |
| Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching FCP Massabuau, PH Griffin, HP Springbett, Y Liu, RV Kumar, T Zhu, ... APL Materials 8 (3), 2020 | 36 | 2020 |
| Integrated wafer scale growth of single crystal metal films and high quality graphene OJ Burton, FCP Massabuau, VP Veigang-Radulescu, B Brennan, ... ACS nano 14 (10), 13593-13601, 2020 | 35 | 2020 |
Colin HumphreysQueen Mary University of LondonEmail verificata su qmul.ac.uk