Peide Ye

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123 articoli

33 articoli

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Gang QiuUniversity of MinnesotaEmail verificata su g.ucla.edu
Han LiuApple Inc.Email verificata su apple.com
Adam T. NealAir Force Research LabEmail verificata su us.af.mil
Yi XUANUniversity of Pittsburgh, School of MedicineEmail verificata su pitt.edu
Xianfan XuPurdue UniversityEmail verificata su purdue.edu
Yanqing WuPeking UniversityEmail verificata su pku.edu.cn
Wenzhuo Wu (武文倬)School of IE; Flex Lab; Birck Nanotechnology Center; Purdue Quantum Science&Engineering InstituteEmail verificata su purdue.edu
Adam CharnasAir Force Research LaboratoryEmail verificata su purdue.edu
Hong ZhouXidian UniversityEmail verificata su xidian.edu.cn
Zehao LinPhD Candidate in Electrical & Computer Engineering, Purdue UniversityEmail verificata su purdue.edu
Haiyan WangPurdue UniversityEmail verificata su purdue.edu
Chang NiuPurdue UniversityEmail verificata su purdue.edu
Muhammad Ashraful AlamJai N. Gupta Distinguished Professor of Electrical Engineering, Purdue UniversityEmail verificata su purdue.edu
Ali ShakouriProfessor of Electrical and Computer Engineering, Purdue UniversityEmail verificata su purdue.edu
Dennis Han Chung LinIMECEmail verificata su imec.be
Yong P. ChenPurdue University; Aarhus University; WPI-AIMR; MUSTEmail verificata su purdue.edu
Dieter WeissUniversitaet Regensburg, Max-Planck Institut FKF Stuttgart, TU München; Technical University MunichEmail verificata su ur.de
M. HongNatl Taiwan Univ. Bell LaboratoriesEmail verificata su phys.ntu.edu.tw
Sami AlghamdiAssociate Professor at King Abdulaziz University - PhD, Purdue UniversityEmail verificata su kau.edu.sa
Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityEmail verificata su purdue.edu

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Peide Ye

Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue University

Email verificata su purdue.edu - Home page

Microelectronic devices nano-materials nano-electronics condense-matter physics


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Phosphorene: an unexplored 2D semiconductor with a high hole mobility H Liu, AT Neal, Z Zhu, Z Luo, X Xu, D Tománek, PD Ye ACS nano 8 (4), 4033-4041, 2014	6643	2014
Semiconducting black phosphorus: synthesis, transport properties and electronic applications H Liu, Y Du, Y Deng, DY Peide Chemical Society Reviews 44 (9), 2732-2743, 2015	1549	2015
Black Phosphorus–Monolayer MoS₂ van der Waals Heterojunction p–n Diode Y Deng, Z Luo, NJ Conrad, H Liu, Y Gong, S Najmaei, PM Ajayan, J Lou, ... ACS nano 8 (8), 8292-8299, 2014	1351	2014
Channel Length Scaling of MoS₂ MOSFETs H Liu, AT Neal, PD Ye ACS nano 6 (10), 8563-8569, 2012	923	2012
Bandgap engineering of two-dimensional semiconductor materials A Chaves, JG Azadani, H Alsalman, DR Da Costa, R Frisenda, AJ Chaves, ... npj 2D Materials and Applications 4 (1), 29, 2020	875	2020
Chloride Molecular Doping Technique on 2D Materials: WS₂ and MoS₂ L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ... Nano letters 14 (11), 6275-6280, 2014	797	2014
Field-effect transistors made from solution-grown two-dimensional tellurene Y Wang, G Qiu, R Wang, S Huang, Q Wang, Y Liu, Y Du, WA Goddard III, ... Nature Electronics 1 (4), 228-236, 2018	775	2018
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus Z Luo, J Maassen, Y Deng, Y Du, RP Garrelts, MS Lundstrom, PD Ye, ... Nature communications 6 (1), 8572, 2015	729	2015
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics S Ju, A Facchetti, Y Xuan, J Liu, F Ishikawa, P Ye, C Zhou, TJ Marks, ... Nature nanotechnology 2 (6), 378-384, 2007	638	2007
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric PD Ye, B Yang, KK Ng, J Bude, GD Wilk, S Halder, JCM Hwang Applied Physics Letters 86 (6), 2005	599	2005
Phosphorene excites materials scientists ES Reich Nature 506 (7486), 19, 2014	578	2014
InP-based transistor fabrication P Ye, Z Cheng, Y Xuan, Y Wu, B Adekore, J Fiorenza US Patent 8,329,541, 2012	549	2012
Dual-Gate MOSFET With Atomic-Layer-Depositedas Top-Gate Dielectric H Liu, DY Peide IEEE electron device letters 33 (4), 546-548, 2012	540	2012
Steep-slope hysteresis-free negative capacitance MoS₂ transistors M Si, CJ Su, C Jiang, NJ Conrad, H Zhou, KD Maize, G Qiu, CT Wu, ... Nature nanotechnology 13 (1), 24-28, 2018	525	2018
Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling Y Du, H Liu, Y Deng, PD Ye ACS nano 8 (10), 10035-10042, 2014	501	2014
A ferroelectric semiconductor field-effect transistor M Si, AK Saha, S Gao, G Qiu, J Qin, Y Duan, J Jian, C Niu, H Wang, W Wu, ... Nature Electronics 2 (12), 580-586, 2019	470	2019
Electrons in a periodic magnetic field induced by a regular array of micromagnets PD Ye, D Weiss, RR Gerhardts, M Seeger, K Von Klitzing, K Eberl, ... Physical review letters 74 (15), 3013, 1995	449	1995
High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm Y Xuan, YQ Wu, PD Ye IEEE Electron Device Letters 29 (4), 294-296, 2008	415	2008
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition PD Ye, GD Wilk, B Yang, J Kwo, SNG Chu, S Nakahara, HJL Gossmann, ... Applied Physics Letters 83 (1), 180-182, 2003	412	2003
Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films H Liu, M Si, S Najmaei, AT Neal, Y Du, PM Ajayan, J Lou, PD Ye Nano letters 13 (6), 2640-2646, 2013	394	2013

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