Parameterization of the optical functions of amorphous materials in the interband region GE Jellison Jr, FA Modine
Applied Physics Letters 69 (3), 371-373, 1996
2885 * 1996 A stable thin‐film lithium electrolyte: lithium phosphorus oxynitride X Yu, JB Bates, GE Jellison, FX Hart
Journal of the electrochemical society 144 (2), 524, 1997
1079 1997 Spectroscopic ellipsometry data analysis: measured versus calculated quantities GE Jellison Jr
Thin solid films 313, 33-39, 1998
464 1998 Data analysis for spectroscopic ellipsometry GE Jellison
Handbook of Ellipsometry, 237-296, 2005
454 2005 Optical functions of silicon determined by two-channel polarization modulation ellipsometry GE Jellison Jr
Optical Materials 1 (1), 41-47, 1992
392 1992 Optical absorption of silicon between 1.6 and 4.7 eV at elevated temperatures GE Jellison, FA Modine
Applied Physics Letters 41 (2), 180-182, 1982
361 1982 Magnetic behavior and spin-lattice coupling in cleavable van der Waals layered MA McGuire, G Clark, S Kc, WM Chance, GE Jellison Jr, VR Cooper, X Xu, ...
Physical Review Materials 1 (1), 014001, 2017
332 2017 Spectroscopic ellipsometry of thin film and bulk anatase GE Jellison Jr, LA Boatner, JD Budai, BS Jeong, DP Norton
Journal of Applied Physics 93 (12), 9537-9541, 2003
320 2003 Optical functions of chemical vapor deposited thin‐film silicon determined by spectroscopic ellipsometry GE Jellison Jr, MF Chisholm, SM Gorbatkin
Applied physics letters 62 (25), 3348-3350, 1993
311 1993 Optical functions of silicon between 1.7 and 4.7 eV at elevated temperatures GE Jellison Jr, FA Modine
Physical Review B 27 (12), 7466, 1983
297 1983 Wide bandgap tunability in complex transition metal oxides by site-specific substitution WS Choi, MF Chisholm, DJ Singh, T Choi, GE Jellison Jr, HN Lee
Nature communications 3 (1), 689, 2012
290 2012 Optical functions of uniaxial ZnO determined by generalized ellipsometry GE Jellison, LA Boatner
Physical Review B 58 (7), 3586, 1998
286 1998 Determinations of structure and bonding in vitreous B2 O3 by means of B10 , B11 , and O17 NMR GE Jellison Jr, LW Panek, PJ Bray, GB Rouse Jr
The Journal of Chemical Physics 66 (2), 802-812, 1977
279 1977 Optical functions of GaAs, GaP, and Ge determined by two-channel polarization modulation ellipsometry GE Jellison Jr
Optical Materials 1 (3), 151-160, 1992
258 1992 Two-modulator generalized ellipsometry: theory GE Jellison Jr, FA Modine
Applied optics 36 (31), 8190-8198, 1997
251 1997 Optical functions of silicon at elevated temperatures GE Jellison Jr, FA Modine
Journal of Applied Physics 76 (6), 3758-3761, 1994
242 1994 Two-modulator generalized ellipsometry: experiment and calibration GE Jellison Jr, FA Modine
Applied optics 36 (31), 8184-8189, 1997
236 1997 Optical constants for silicon at 300 and 10 K determined from 1.64 to 4.73 eV by ellipsometry GE Jellison Jr, FA Modine
Journal of Applied Physics 53 (5), 3745-3753, 1982
229 1982 A structural interpretation of B10 and B11 NMR spectra in sodium borate glasses GE Jellison Jr, PJ Bray
Journal of Non-Crystalline Solids 29 (2), 187-206, 1978
222 1978 Characterization and optimization of absorbing plasma-enhanced chemical vapor deposited antireflection coatings for silicon photovoltaics P Doshi, GE Jellison Jr, A Rohatgi
Applied optics 36 (30), 7826-7837, 1997
211 1997 
Lynn A BoatnerDirector, ORNL Center for Radiation Detection Materials and SystemsEmail verificata su ornl.gov
