Lateral heterostructure field-effect transistors based on two-dimensional material stacks with varying thickness and energy filtering source EG Marin, D Marian, M Perucchini, G Fiori, G Iannaccone
ACS nano 14 (2), 1982-1989, 2020
60 2020 Ultralow specific contact resistivity in metal–graphene junctions via contact engineering V Passi, A Gahoi, EG Marin, T Cusati, A Fortunelli, G Iannaccone, G Fiori, ...
Advanced Materials Interfaces 6 (1), 1801285, 2019
55 2019 Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2 D Marian, E Dib, T Cusati, EG Marin, A Fortunelli, G Iannaccone, G Fiori
Physical Review Applied 8, 054047, 2017
53 2017 Modeling of electron devices based on 2-D materials EG Marin, M Perucchini, D Marian, G Iannaccone, G Fiori
IEEE Transactions on Electron Devices 65 (10), 4167-4179, 2018
47 2018 A new holistic model of 2-D semiconductor FETs EG Marin, SJ Bader, D Jena
IEEE Transactions on Electron Devices 65 (3), 1239-1245, 2018
45 2018 First-principles simulations of FETs based on two-dimensional InSe EG Marin, D Marian, G Iannaccone, G Fiori
IEEE Electron Device Letters 39 (4), 626-629, 2018
45 2018 Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts A Avsar, K Marinov, EG Marin, G Iannaccone, K Watanabe, T Taniguchi, ...
Advanced Materials 30 (18), 1707200, 2018
37 2018 Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting H Mine, A Kobayashi, T Nakamura, T Inoue, S Pakdel, D Marian, ...
Physical review letters 123 (14), 146803, 2019
35 2019 First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials EG Marin, D Marian, G Iannaccone, G Fiori
Nanoscale 9 (48), 19390-19397, 2017
35 2017 Flexible one-dimensional metal–insulator–graphene diode Z Wang, B Uzlu, M Shaygan, M Otto, M Ribeiro, EG Marín, G Iannaccone, ...
ACS Applied Electronic Materials 1 (6), 945-950, 2019
33 2019 Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors EG Marin, FG Ruiz, IM Tienda-Luna, A Godoy, P Sánchez-Moreno, ...
Journal of Applied Physics 112 (8), 2012
29 2012 A graphene field-effect transistor based analogue phase shifter for high-frequency applications A Medina-Rull, F Pasadas, EG Marin, A Toral-Lopez, J Cuesta, A Godoy, ...
IEEE Access 8, 209055-209063, 2020
28 2020 Analytical gate capacitance modeling of III–V nanowire transistors EG Marin, FJG Ruiz, IM Tienda-Luna, A Godoy, F Gamiz
IEEE transactions on electron devices 60 (5), 1590-1599, 2013
24 2013 Tunnel-field-effect spin filter from two-dimensional antiferromagnetic stanene EG Marin, D Marian, G Iannaccone, G Fiori
Physical Review Applied 10 (4), 044063, 2018
23 2018 Large-signal model of 2DFETs: Compact modeling of terminal charges and intrinsic capacitances F Pasadas, EG Marin, A Toral-Lopez, FG Ruiz, A Godoy, S Park, ...
npj 2D Materials and Applications 3 (1), 47, 2019
22 2019 Stable Al2 O3 Encapsulation of MoS2 ‐FETs Enabled by CVD Grown h‐BN A Piacentini, D Marian, DS Schneider, E González Marín, Z Wang, M Otto, ...
Advanced Electronic Materials 8 (9), 2200123, 2022
18 2022 Analytic drain current model for III–V cylindrical nanowire transistors EG Marin, FG Ruiz, V Schmidt, A Godoy, H Riel, F Gamiz
Journal of Applied Physics 118 (4), 2015
17 2015 A SPICE compact model for ambipolar 2-D-material FETs aiming at circuit design SA Ahsan, SK Singh, MA Mir, M Perucchini, DK Polyushkin, T Mueller, ...
IEEE Transactions on Electron Devices 68 (6), 3096-3103, 2021
15 2021 GFET asymmetric transfer response analysis through access region resistances A Toral-Lopez, EG Marin, F Pasadas, JM Gonzalez-Medina, FG Ruiz, ...
Nanomaterials 9 (7), 1027, 2019
15 2019 Impact of the Back-Gate Biasing on Trigate MOSFET Electron Mobility EG Marin, FG Ruiz, A Godoy, IM Tienda-Luna, C Martinez-Blanque, ...
Electron Devices, IEEE Transactions on 62 (1), 224 - 227, 2015
15 2015 
Francisco G. RuizTenured Professor, University of GranadaEmail verificata su ugr.es
