| Strong interfacial exchange field in the graphene/EuS heterostructure P Wei, S Lee, F Lemaitre, L Pinel, D Cutaia, W Cha, F Katmis, Y Zhu, ... Nature materials 15 (7), 711-716, 2016 | 413 | 2016 |
| Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si H Schmid, M Borg, K Moselund, L Gignac, CM Breslin, J Bruley, D Cutaia, ... Applied Physics Letters 106 (23), 2015 | 265 | 2015 |
| Lateral InAs/Si p-type tunnel FETs integrated on Si—Part 2: Simulation study of the impact of interface traps S Sant, K Moselund, D Cutaia, H Schmid, M Borg, H Riel, A Schenk IEEE Transactions on Electron Devices 63 (11), 4240-4247, 2016 | 95 | 2016 |
| High-mobility GaSb nanostructures cointegrated with InAs on Si M Borg, H Schmid, J Gooth, MD Rossell, D Cutaia, M Knoedler, ... ACS nano 11 (3), 2554-2560, 2017 | 72 | 2017 |
| Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si M Borg, H Schmid, KE Moselund, D Cutaia, H Riel Journal of Applied Physics 117 (14), 2015 | 70 | 2015 |
| Complementary III–V heterojunction lateral NW tunnel FET technology on Si D Cutaia, KE Moselund, H Schmid, M Borg, A Olziersky, H Riel 2016 IEEE Symposium on VlSI Technology, 1-2, 2016 | 61 | 2016 |
| Lateral InAs/Si p-type tunnel FETs integrated on Si—part 1: experimental devices KE Moselund, D Cutaia, H Schmid, M Borg, S Sant, A Schenk, H Riel IEEE Transactions on Electron Devices 63 (11), 4233-4239, 2016 | 48 | 2016 |
| Vertical InAs-Si gate-all-around tunnel FETs integrated on Si using selective epitaxy in nanotube templates D Cutaia, KE Moselund, M Borg, H Schmid, L Gignac, CM Breslin, S Karg, ... IEEE Journal of the Electron Devices Society 3 (3), 176-183, 2015 | 48 | 2015 |
| Monolithic integration of multiple III-V semiconductors on Si for MOSFETs and TFETs H Schmid, D Cutaia, J Gooth, S Wirths, N Bologna, KE Moselund, H Riel 2016 IEEE International Electron Devices Meeting (IEDM), 3.6. 1-3.6. 4, 2016 | 24 | 2016 |
| Complementary III–V heterostructure tunnel FETs KE Moselund, D Cutaia, H Schmid, H Riel, S Sant, A Schenk 2016 46th European Solid-State Device Research Conference (ESSDERC), 403-407, 2016 | 10 | 2016 |
| Fabrication and analysis of vertical p-type InAs-Si nanowire Tunnel FETs D Cutaia, KE Moselund, M Borg, H Schmid, L Gignac, CM Breslin, S Karg, ... EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015 | 8 | 2015 |
| Investigation of InAs/GaSb tunnel diodes on SOI C Convertino, D Cutaia, H Schmid, N Bologna, P Paletti, AM Ionescu, ... 2017 Joint International EUROSOI Workshop and International Conference on …, 2017 | 6 | 2017 |
| Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs D Cutaia, H Schmid, M Borg, K Moselund, N Bologna, A Olziersky, ... 2016 IEEE Silicon Nanoelectronics Workshop (SNW), 152-153, 2016 | 4 | 2016 |
| Strong interfacial exchange field in 2D material/magnetic–insulator heterostructures: Graphene/EuS P Wei, S Lee, F Lemaitre, L Pinel, D Cutaia, W Cha, F Katmis, Y Zhu, ... arXiv preprint arXiv:1510.05920, 2015 | 3 | 2015 |
| III-V heterojunction nanowire tunnel FETs monolithically integrated on silicon KE Moselund, D Cutaia, H Schmid, M Borg, S Sant, A Schenk, H Riel 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), 1-2, 2016 | 2 | 2016 |
| III–V device integration on Si using template-assisted selective epitaxy H Schmid, M Borg, K Moselund, L Gignac, C Breslin, J Bruley, D Cutaia, ... 2015 73rd Annual Device Research Conference (DRC), 255-256, 2015 | 2 | 2015 |
| Integration Of III-V Heterostructure Tunnel Fets On Si Using Template Assisted Selective Epitaxy (TASE) K Moselund, D Cutaia, M Borg, H Schmid, S Sant, A Schenk, H Riel III 2016 Compound Semiconductor Week (CSW)[Includes 28th International …, 2016 | 1 | 2016 |
| Field-effect transistor structure and fabrication method C Convertino, CB Zota, KE Moselund, L Czornomaz, D Cutaia US Patent 11,201,246, 2021 | | 2021 |
| Uniting III-V tunnel D CUTAIA, K MOSELUND, H SCHMID III-Vs get out and about, 38, 2017 | | 2017 |
| Defect Investigation by Atomic‐Resolution STEM of III‐V Horizontal Nanowires grown via Template‐Assisted Selective area Epitaxy N Bologna, M Knoedler, M Borg, D Cutaia, R Erni, H Riel, RD Marta European Microscopy Congress 2016: Proceedings, 634-635, 2016 | | 2016 |
