Articoli con mandati relativi all'accesso pubblico - Sudhiranjan TripathyUlteriori informazioni
Non disponibili pubblicamente: 29
Sputter grown sub-micrometer thick Cu 2 ZnSnS 4 thin film for photovoltaic device application
GK Dalapati, SK Batabyal, S Masudy-Panah, Z Su, A Kushwaha, TI Wong, ...
Materials Letters 160, 45-50, 2015
Mandati: A*Star, Singapore
Direct Patterning of Zinc Sulfide on a Sub-10 Nanometer Scale via Electron Beam Lithography
MSM Saifullah, M Asbahi, M Binti-Kamran Kiyani, S Tripathy, EAH Ong, ...
ACS nano 11 (10), 9920-9929, 2017
Mandati: A*Star, Singapore
Slippery and Wear-Resistant Surfaces Enabled by Interface Engineered Graphene
N Dwivedi, T Patra, JB Lee, RJ Yeo, S Srinivasan, T Dutta, K Sasikumar, ...
Nano letters 20 (2), 905-917, 2019
Mandati: US Department of Energy, Council of Scientific and Industrial Research …
Linear and Circular AlGaN/AlN/GaN MOS-HEMT-based pH Sensor on Si Substrate: A Comparative Analysis
A Varghese, C Periasamy, L Bhargava, SB Dolmanan, S Tripathy
IEEE Sensors Letters 3 (4), 1-4, 2019
Mandati: Department of Science & Technology, India
Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal
S Arulkumaran, GI Ng, K Ranjan, CMM Kumar, SC Foo, KS Ang, ...
Japanese Journal of Applied Physics 54 (4S), 04DF12, 2015
Mandati: A*Star, Singapore
Atomic Scale Interface Manipulation, Structural Engineering, and Their Impact on Ultrathin Carbon Films in Controlling Wear, Friction, and Corrosion
N Dwivedi, RJ Yeo, LJK Yak, N Satyanarayana, C Dhand, TN Bhat, ...
ACS applied materials & interfaces 8 (27), 17606-17621, 2016
Mandati: National Research Foundation, Singapore
Direct observation of thickness and foreign interlayer driven abrupt structural transformation in ultrathin carbon and hybrid silicon nitride/carbon films
N Dwivedi, RJ Yeo, Z Zhang, C Dhand, S Tripathy, CS Bhatia
Carbon 115, 701-719, 2017
Mandati: National Research Foundation, Singapore
Superior wear resistance and low friction in hybrid ultrathin silicon nitride/carbon films: synergy of the interfacial chemistry and carbon microstructure
RJ Yeo, N Dwivedi, L Zhang, Z Zhang, CYH Lim, S Tripathy, CS Bhatia
Nanoscale 9 (39), 14937-14951, 2017
Mandati: A*Star, Singapore, National Research Foundation, Singapore
Durable ultrathin silicon nitride/carbon bilayer overcoats for magnetic heads: The role of enhanced interfacial bonding
RJ Yeo, N Dwivedi, L Zhang, Z Zhang, CYH Lim, S Tripathy, CS Bhatia
Journal of Applied Physics 117 (4), 2015
Mandati: National Research Foundation, Singapore
Room-Temperature Patterning of Nanoscale MoS2 under an Electron Beam
MSM Saifullah, M Asbahi, M Binti-Kamran Kiyani, SS Liow, ...
ACS Applied Materials & Interfaces 12 (14), 16772-16781, 2020
Mandati: A*Star, Singapore
Formation of Ni Diffusion-Induced Surface Traps in GaN/Al x Ga1−x N/GaN Heterostructures on Silicon Substrate During Gate Metal …
RS Kajen, LK Bera, HR Tan, SB Dolmanan, ZW Cheong, S Tripathy
Journal of Electronic Materials 45, 493-498, 2016
Mandati: A*Star, Singapore
Influence of PECVD deposited SiN x passivation layer thickness on In0. 18Al0. 82N/GaN/Si HEMT
SP Singh, Y Liu, YJ Ngoo, LM Kyaw, MK Bera, SB Dolmanan, S Tripathy, ...
Journal of Physics D: Applied Physics 48 (36), 365104, 2015
Mandati: A*Star, Singapore
Recent progress on group III nitride nanostructure-based gas sensors
N Sharma, V Pandey, A Gupta, ST Tan, S Tripathy, M Kumar
Journal of Materials Chemistry C 10 (34), 12157-12190, 2022
Mandati: Department of Science & Technology, India
Al Ga1–xN/GaN MISHEMTs With a Common Gold-Free Metal-Stack for Source/Drain/Gate
WH Tham, LK Bera, DS Ang, SB Dolmanan, TN Bhat, S Tripathy
IEEE Electron Device Letters 36 (12), 1291-1294, 2015
Mandati: A*Star, Singapore
Excellent wear life of silicon nitride/tetrahedral amorphous carbon bilayer overcoat on functional tape heads
RJ Yeo, N Dwivedi, S Tripathy, CS Bhatia
Applied Physics Letters 106 (9), 2015
Mandati: National Research Foundation, Singapore
Fabrication and Modeling based Performance Analysis of Circular GaN MOSHEMT based Electrochemical Sensors
A Varghese, C Periasamy, L Bhargava, SB Dolmanan, S Tripathy
IEEE Sensors Journal 21 (4), 2021
Mandati: Department of Science & Technology, India, A*Star, Singapore
Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using AlxGa1–xN/GaN High Electron Mobility Transistor Structures on Si (111)
S Kumar, AS Pratiyush, SB Dolmanan, HR Tan, S Tripathy, ...
ACS Applied Electronic Materials 1 (3), 340-345, 2019
Mandati: Department of Science & Technology, India
Angstrom-Scale Transparent Overcoats: Interfacial Nitrogen-Driven Atomic Intermingling Promotes Lubricity and Surface Protection of Ultrathin Carbon
N Dwivedi, A Neogi, TK Patra, C Dhand, T Dutta, RJ Yeo, R Kumar, ...
Nano Letters 21 (21), 8960-8969, 2021
Mandati: US Department of Energy, Council of Scientific and Industrial Research, India
AlGaN/GaN HEMT Based pH Detection Using Atomic Layer Deposition of Al2O3 as Sensing Membrane and Passivation
AM Bhat, C Periasamy, R Poonia, A Varghese, N Shafi, S Tripathy
IEEE Transactions on Nanotechnology 22, 466-472, 2023
Mandati: Department of Science & Technology, India
1T and 2H heterophase MoS2 for enhanced sensitivity of GaN transistor-based mercury ions sensor
N Sharma, A Nigam, SB Dolmanan, A Gupta, S Tripathy, M Kumar
Nanotechnology 33 (26), 265501, 2022
Mandati: Department of Science & Technology, India
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