| Nanowire transistors without junctions JP Colinge, CW Lee, A Afzalian, ND Akhavan, R Yan, I Ferain, P Razavi, ... Nature nanotechnology 5 (3), 225-229, 2010 | 2831 | 2010 |
| Junctionless multigate field-effect transistor CW Lee, A Afzalian, ND Akhavan, R Yan, I Ferain, JP Colinge Applied Physics Letters 94 (5), 2009 | 1342 | 2009 |
| Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors I Ferain, CA Colinge, JP Colinge Nature 479 (7373), 310-316, 2011 | 1231 | 2011 |
| Junctionless nanowire transistor (JNT): Properties and design guidelines JP Colinge, A Kranti, R Yan, CW Lee, I Ferain, R Yu, ND Akhavan, ... Solid-State Electronics 65, 33-37, 2011 | 712 | 2011 |
| Performance estimation of junctionless multigate transistors CW Lee, I Ferain, A Afzalian, R Yan, ND Akhavan, P Razavi, JP Colinge Solid-State Electronics 54 (2), 97-103, 2010 | 644 | 2010 |
| High-temperature performance of silicon junctionless MOSFETs CW Lee, A Borne, I Ferain, A Afzalian, R Yan, ND Akhavan, P Razavi, ... IEEE transactions on electron devices 57 (3), 620-625, 2010 | 448 | 2010 |
| Reduced electric field in junctionless transistors JP Colinge, CW Lee, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ... Applied Physics Letters 96 (7), 2010 | 377 | 2010 |
| Transport spectroscopy of a single dopant in a gated silicon nanowire H Sellier, GP Lansbergen, J Caro, S Rogge, N Collaert, I Ferain, ... Physical Review Letters 97 (20), 206805, 2006 | 365 | 2006 |
| Junctionless multiple-gate transistors for analog applications RT Doria, MA Pavanello, RD Trevisoli, M de Souza, CW Lee, I Ferain, ... IEEE Transactions on Electron Devices 58 (8), 2511-2519, 2011 | 284 | 2011 |
| Low subthreshold slope in junctionless multigate transistors CW Lee, AN Nazarov, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ... Applied Physics Letters 96 (10), 2010 | 283 | 2010 |
| SOI gated resistor: CMOS without junctions JP Colinge, CW Lee, A Afzalian, N Dehdashti, R Yan, I Ferain, P Razavi, ... 2009 IEEE International SOI Conference, 1-2, 2009 | 188 | 2009 |
| Junctionless transistors: physics and properties JP Colinge, CW Lee, N Dehdashti Akhavan, R Yan, I Ferain, P Razavi, ... Semiconductor-on-insulator materials for nanoelectronics applications, 187-200, 2011 | 157 | 2011 |
| Multi-gate devices for the 32 nm technology node and beyond N Collaert, A De Keersgieter, A Dixit, I Ferain, LS Lai, D Lenoble, ... Solid-State Electronics 52 (9), 1291-1296, 2008 | 131 | 2008 |
| Surface-potential-based drain current analytical model for triple-gate junctionless nanowire transistors RD Trevisoli, RT Doria, M de Souza, S Das, I Ferain, MA Pavanello IEEE Transactions on Electron Devices 59 (12), 3510-3518, 2012 | 126 | 2012 |
| Tall triple-gate devices with TiN/HfO/sub 2/gate stack N Collaert, M Demand, I Ferain, J Lisoni, R Singanamalla, P Zimmerman, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 108-109, 2005 | 104 | 2005 |
| Subthreshold channels at the edges of nanoscale triple-gate silicon transistors H Sellier, GP Lansbergen, J Caro, S Rogge, N Collaert, I Ferain, ... Applied physics letters 90 (7), 2007 | 70 | 2007 |
| Mobility improvement in nanowire junctionless transistors by uniaxial strain JP Raskin, JP Colinge, I Ferain, A Kranti, CW Lee, ND Akhavan, R Yan, ... Applied Physics Letters 97 (4), 2010 | 61 | 2010 |
| GIDL (gate-induced drain leakage) and parasitic schottky barrier leakage elimination in aggressively scaled HfO/sub 2/TiN FinFET devices T Hoffmann, G Doornbos, I Ferain, N Collaert, P Zimmerman, M Goodwin, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 61 | 2005 |
| Improvement of carrier ballisticity in junctionless nanowire transistors N Dehdashti Akhavan, I Ferain, P Razavi, R Yu, JP Colinge Applied Physics Letters 98 (10), 2011 | 58 | 2011 |
| Junctionless 6T SRAM cell A Kranti, CW Lee, I Ferain, R Yan, N Akhavan, P Razavi, R Yu, ... Electronics letters 46 (22), 1491-1493, 2010 | 57 | 2010 |
