Power conversion with SiC devices at extremely high ambient temperatures T Funaki, JC Balda, J Junghans, AS Kashyap, HA Mantooth, F Barlow, ... IEEE Transactions on Power electronics 22 (4), 1321-1329, 2007 | 410 | 2007 |
Extreme Environment Electronics Cressler CRC Press, 2012 | 305* | 2012 |
A 55-kW Three-Phase Inverter With Si IGBTs and SiC Schottky Diodes B Ozpineci, MS Chinthavali, LM Tolbert, AS Kashyap, HA Mantooth IEEE Transactions on industry applications 45 (1), 278-285, 2009 | 142 | 2009 |
Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications JS Glaser, JJ Nasadoski, PA Losee, AS Kashyap, KS Matocha, JL Garrett, ... 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and …, 2011 | 124 | 2011 |
Silicon carbide integrated circuits for extreme environments AS Kashyap, CP Chen, R Ghandi, A Patil, E Andarawis, L Yin, ... The 1st IEEE workshop on wide bandgap power devices and applications, 60-63, 2013 | 47 | 2013 |
Characterization of SiC JFET for temperature dependent device modeling T Funaki, AS Kashyap, HA Mantooth, JC Balda, FD Barlow, T Kimoto, ... 2006 37th IEEE Power Electronics Specialists Conference, 1-6, 2006 | 45 | 2006 |
SiC JFET dc characteristics under extremely high ambient temperatures T Funaki, JC Balda, J Junghans, AS Kashyap, FD Barlow, HA Mantooth, ... IEICE Electronics Express 1 (17), 523-527, 2004 | 39 | 2004 |
Compact modeling of LDMOS transistors for extreme environment analog circuit design AS Kashyap, HA Mantooth, TA Vo, M Mojarradi IEEE Transactions on Electron Devices 57 (6), 1431-1439, 2010 | 33 | 2010 |
Compact circuit simulation model of silicon carbide static induction and junction field effect transistors AS Kashyap, PL Ramavarapu, SM Lal, TR McNutt, AB Lostetter, T Funaki, ... 2004 IEEE Workshop on Computers in Power Electronics, 2004. Proceedings., 29-35, 2004 | 23 | 2004 |
Characterization of SiC diodes in extremely high temperature ambient T Funaki, AS Kashyap, HA Mantooth, JC Balda, FD Barlow, T Kimoto, ... Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition …, 2006 | 21 | 2006 |
Method and system for lightning protection with distributed transient voltage suppression AJ Knobloch, EA Andarawis, HK Mathews Jr, AS Kashyap US Patent 9,042,072, 2015 | 19 | 2015 |
Modeling vertical channel junction field effect devices in silicon carbide AS Kashyap, PL Ramavarapu, S Maganlal, TR McNutt, AB Lostetter, ... 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No …, 2004 | 18 | 2004 |
Highly rugged 1200 v 80 mQ 4-H SiC power MOSFET IH Ji, A Gendron-Hansen, M Lee, E Maxwell, B Odekirk, D Sdrulla, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 16 | 2017 |
Silicon carbide high temperature operational amplifier A Vert, CP Chen, A Patil, R Saia, E Andarawis, A Kashyap, T Zhang, ... Additional Papers and Presentations 2012 (HITEC), 000378-000383, 2012 | 15 | 2012 |
Static and dynamic characterization of 3.3-kV SiC MOSFET modules with and without external anti-parallel SiC JBS diode A Rahouma, GG Oggier, JC Balda, A Kashyap 2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-5, 2022 | 12 | 2022 |
Compact modeling of silicon carbide lateral MOSFETs for extreme environment integrated circuits AS Kashyap, CP Chen, V Tilak ISDRS 2011, 2, 2011 | 12 | 2011 |
Over-voltage protection of gallium nitride semiconductor devices AS Kashyap, PM Sandvik, R Zhou US Patent 9,111,750, 2015 | 11 | 2015 |
Method and system for ultra miniaturized packages for transient voltage suppressors AS Kashyap, EA Andarawis, DM Shaddock US Patent 8,835,976, 2014 | 11 | 2014 |
Radiation hardness study on SiC power MOSFETs X Zhu, JM Lauenstein, A Bolonikov, B Jacob, A Kashyap, K Sariri, Y Chen International Conference on Silicon Carbide and Related Materials, 2017 | 10 | 2017 |
The modeling and characterization of silicon carbide thyristors OS Saadeh, HA Mantooth, JC Balda, AK Agarwal, AS Kashyap 2008 IEEE Power Electronics Specialists Conference, 1092-1097, 2008 | 10 | 2008 |