| Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process G Capellini, C Reich, S Guha, Y Yamamoto, M Lisker, M Virgilio, A Ghrib, ... Optics express 22 (1), 399-410, 2014 | 124 | 2014 |
| Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach G Capellini, G Kozlowski, Y Yamamoto, M Lisker, C Wenger, G Niu, ... Journal of Applied Physics 113 (1), 2013 | 117 | 2013 |
| Tensile-strained germanium microdisks A Ghrib, M El Kurdi, M De Kersauson, M Prost, S Sauvage, X Checoury, ... Applied Physics Letters 102 (22), 2013 | 108 | 2013 |
| All‐Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities A Ghrib, M El Kurdi, M Prost, S Sauvage, X Checoury, G Beaudoin, ... Advanced Optical Materials 3 (3), 353-358, 2015 | 104 | 2015 |
| Recent advances in germanium emission P Boucaud, M El Kurdi, A Ghrib, M Prost, M De Kersauson, S Sauvage, ... Photonics Research 1 (3), 102-109, 2013 | 98 | 2013 |
| Control of tensile strain in germanium waveguides through silicon nitride layers A Ghrib, M De Kersauson, M El Kurdi, R Jakomin, G Beaudoin, ... Applied Physics Letters 100 (20), 2012 | 82 | 2012 |
| Control of tensile strain and interdiffusion in Ge/Si (001) epilayers grown by molecular-beam epitaxy TKP Luong, MT Dau, MA Zrir, M Stoffel, V Le Thanh, M Petit, A Ghrib, ... Journal of Applied Physics 114 (8), 2013 | 77 | 2013 |
| Direct band gap germanium microdisks obtained with silicon nitride stressor layers M El Kurdi, M Prost, A Ghrib, S Sauvage, X Checoury, G Beaudoin, ... ACS photonics 3 (3), 443-448, 2016 | 74 | 2016 |
| Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon I Roland, Y Zeng, Z Han, X Checoury, C Blin, M El Kurdi, A Ghrib, ... Applied Physics Letters 105 (1), 2014 | 44 | 2014 |
| Light emission from strained germanium JR Jain, A Hryciw, TM Baer, DAB Miller, ML Brongersma, RT Howe Nature Photonics 7 (3), 162-163, 2013 | 37 | 2013 |
| Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si (001) films using a GaP decomposition source TKP Luong, A Ghrib, MT Dau, MA Zrir, M Stoffel, V Le Thanh, R Daineche, ... Thin Solid Films 557, 70-75, 2014 | 33 | 2014 |
| Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers M De Kersauson, M Prost, A Ghrib, M El Kurdi, S Sauvage, G Beaudoin, ... Journal of Applied Physics 113 (18), 2013 | 31 | 2013 |
| Tensile-strained germanium microdisks with circular Bragg reflectors M El Kurdi, M Prost, A Ghrib, A Elbaz, S Sauvage, X Checoury, ... Applied Physics Letters 108 (9), 2016 | 29 | 2016 |
| Tensile-strained germanium microdisk electroluminescence M Prost, M El Kurdi, A Ghrib, S Sauvage, X Checoury, N Zerounian, ... Optics Express 23 (5), 6722-6730, 2015 | 24 | 2015 |
| Making germanium, an indirect band gap semiconductor, suitable for light-emitting devices TKP Luong, V Le Thanh, A Ghrib, M El Kurdi, P Boucaud Advances in Natural Sciences: Nanoscience and Nanotechnology 6 (1), 015013, 2015 | 22 | 2015 |
| Schottky electroluminescent diodes with n-doped germanium M Prost, M El Kurdi, A Ghrib, X Checoury, N Zerounian, F Aniel, ... Applied Physics Letters 104 (24), 2014 | 11 | 2014 |
| Strain engineering in germanium microdisks A Ghrib, M El Kurdi, M Prost, M De Kersauson, L Largeau, O Mauguin, ... Silicon Photonics IX 8990, 293-299, 2014 | 9 | 2014 |
| Enhanced Tensile Strain in P-doped Ge Films Grown by Molecular Beam Epitaxy Using GaP and Sb Solid Sources TKP Luong, V Le Thanh, A Ghrib, M El Kurdi, P Boucaud Journal of Electronic Materials 48, 4674-4678, 2019 | 6 | 2019 |
| Strain engineering for optical gain in germanium M El Kurdi, M de Kersauson, A Ghrib, M Prost, S Sauvage, R Jakomin, ... ECS Transactions 50 (9), 363, 2013 | 4 | 2013 |
| Tensile strained Ge layers obtained via a Si-CMOS compatible approach G Capellini, G Kozlowski, Y Yamamoto, M Lisker, T Schroeder, A Ghrib, ... 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 1-2, 2012 | 4 | 2012 |