Control of gold surface diffusion on Si nanowires MI den Hertog, JL Rouviere, F Dhalluin, PJ Desré, P Gentile, P Ferret, ...
Nano letters 8 (5), 1544-1550, 2008
138 2008 Epitaxy Of GaN Nanowires On Graphene V Kumaresan, L Largeau, A Madouri, F Glas, H Zhang, F Oehler, ...
Nano Letters, 2016
135 2016 Sharpening the Interfaces of Axial Heterostructures in Self-Catalyzed AlGaAs Nanowires: Experiment and Theory G Priante, F Glas, G Patriarche, K Pantzas, F Oehler, JC Harmand
Nano letters 16 (3), 1917-1924, 2016
95 2016 Effect of HCl on the doping and shape control of silicon nanowires P Gentile, A Solanki, N Pauc, F Oehler, B Salem, G Rosaz, T Baron, ...
Nanotechnology 23 (21), 215702, 2012
90 2012 Measuring and modeling the growth dynamics of self-catalyzed GaP nanowire arrays F Oehler, A Cattoni, A Scaccabarozzi, G Patriarche, F Glas, JC Harmand
Nano letters 18 (2), 701-708, 2018
79 2018 Abrupt GaP/GaAs Interfaces in Self-Catalyzed Nanowires G Priante, G Patriarche, F Oehler, F Glas, JC Harmand
Nano letters 15 (9), 6036-6041, 2015
74 2015 Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory S Schulz, DP Tanner, EP O'Reilly, MA Caro, TL Martin, PAJ Bagot, ...
Physical Review B 92 (23), 235419, 2015
73 2015 The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem FCP Massabuau, MJ Davies, F Oehler, SK Pamenter, EJ Thrush, ...
Applied physics letters 105 (11), 2014
71 2014 Interface dipole and band bending in the hybrid H Henck, Z Ben Aziza, O Zill, D Pierucci, CH Naylor, MG Silly, N Gogneau, ...
Physical Review B 96 (11), 115312, 2017
67 2017 Surface recombination velocity measurements of efficiently passivated gold-catalyzed silicon nanowires by a new optical method O Demichel, V Calvo, A Besson, P Noe, B Salem, N Pauc, F Oehler, ...
Nano letters 10 (7), 2323-2329, 2010
67 2010 The effects of HCl on silicon nanowire growth: surface chlorination and existence of a'diffusion-limited minimum diameter' F Oehler, P Gentile, T Baron, P Ferret
Nanotechnology 20 (47), 475307, 2009
66 2009 The importance of the radial growth in the faceting of silicon nanowires F Oehler, P Gentile, T Baron, P Ferret, M Den Hertog, J Rouviere
Nano letters 10 (7), 2335-2341, 2010
65 2010 Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography F Tang, T Zhu, F Oehler, WY Fu, JT Griffiths, FCP Massabuau, ...
Applied Physics Letters 106 (7), 2015
62 2015 Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy T Zhu, F Oehler, BPL Reid, RM Emery, RA Taylor, MJ Kappers, RA Oliver
Applied Physics Letters 102, 251905, 2013
53 2013 Indirect to direct band gap crossover in two-dimensional WS2(1−x ) Se2x alloys C Ernandes, L Khalil, H Almabrouk, D Pierucci, B Zheng, J Avila, P Dudin, ...
npj 2D Materials and Applications 5 (1), 7, 2021
52 2021 Structure and strain relaxation effects of defects in InxGa1− xN epilayers SL Rhode, WY Fu, MA Moram, FCP Massabuau, MJ Kappers, ...
Journal of Applied Physics 116 (10), 2014
52 2014 Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence HL Chen, C Himwas, A Scaccabarozzi, P Rale, F Oehler, A Lemaître, ...
Nano letters 17 (11), 6667-6675, 2017
50 2017 Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges F Oehler, T Zhu, S Rhode, MJ Kappers, CJ Humphreys, RA Oliver
Journal of Crystal Growth 383, 12-18, 2013
49 2013 Hidden defects in silicon nanowires MI Den Hertog, C Cayron, P Gentile, F Dhalluin, F Oehler, T Baron, ...
Nanotechnology 23 (2), 025701, 2011
49 2011 Self-induced growth of vertical GaN nanowires on silica V Kumaresan, L Largeau, F Oehler, H Zhang, O Mauguin, F Glas, ...
Nanotechnology 27 (13), 135602, 2016
45 2016 
Rachel OliverProfessor of Materials Science, Cambridge UniversityEmail verificata su cam.ac.uk
