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B.T. Jonker
B.T. Jonker
Altri nomiBerend T. Jonker
Email verificata su nrl.navy.mil
Titolo
Citata da
Citata da
Anno
Chemical Vapor Sensing with Monolayer MoS2
FK Perkins, AL Friedman, E Cobas, PM Campbell, GG Jernigan, ...
Nano letters 13 (2), 668-673, 2013
12742013
A Group-IV Ferromagnetic Semiconductor: MnxGe1−x
YD Park, AT Hanbicki, SC Erwin, CS Hellberg, JM Sullivan, JE Mattson, ...
Science 295 (5555), 651-654, 2002
10772002
Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor
AT Hanbicki, BT Jonker, G Itskos, G Kioseoglou, A Petrou
Applied Physics Letters 80 (7), 1240-1242, 2002
9132002
Robust electrical spin injection into a semiconductor heterostructure
BT Jonker, YD Park, BR Bennett, HD Cheong, G Kioseoglou, A Petrou
Physical Review B 62 (12), 8180, 2000
6582000
Electrical detection of charge-current-induced spin polarization due to spin-momentum locking in Bi2Se3
CH Li, OMJ Van ‘T Erve, JT Robinson, Y Liu, L Li, BT Jonker
Nature nanotechnology 9 (3), 218-224, 2014
5202014
Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact
BT Jonker, G Kioseoglou, AT Hanbicki, CH Li, PE Thompson
Nature Physics 3 (8), 542-546, 2007
5022007
Properties of Fe single‐crystal films grown on (100) GaAs by molecular‐beam epitaxy
JJ Krebs, BT Jonker, GA Prinz
Journal of applied physics 61 (7), 2596-2599, 1987
4871987
Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier
AT Hanbicki, OMJ Van’t Erve, R Magno, G Kioseoglou, CH Li, BT Jonker, ...
Applied Physics Letters 82 (23), 4092-4094, 2003
4702003
Exciton diamagnetic shifts and valley Zeeman effects in monolayer WS2 and MoS2 to 65 Tesla
AV Stier, KM McCreary, BT Jonker, J Kono, SA Crooker
Nature communications 7 (1), 10643, 2016
3712016
Valley polarization and intervalley scattering in monolayer MoS2
G Kioseoglou, AT Hanbicki, M Currie, AL Friedman, D Gunlycke, ...
Applied Physics Letters 101 (22), 2012
3512012
Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry
OMJ Van’t Erve, AT Hanbicki, M Holub, CH Li, C Awo-Affouda, ...
Applied Physics Letters 91 (21), 2007
3442007
Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2
AT Hanbicki, M Currie, G Kioseoglou, AL Friedman, BT Jonker
Solid State Communications 203, 16-20, 2015
3372015
Direct evidence for perpendicular spin orientations and enhanced hyperfine fields in ultrathin Fe (100) films on Ag (100)
NC Koon, BT Jonker, FA Volkening, JJ Krebs, GA Prinz
Physical review letters 59 (21), 2463, 1987
3141987
Spin-polarized photoemission study of epitaxial Fe (001) films on Ag (001)
BT Jonker, KH Walker, E Kisker, GA Prinz, C Carbone
Physical review letters 57 (1), 142, 1986
2781986
Influence of substrate surface reconstruction on the growth and magnetic properties of Fe on GaAs (001)
EM Kneedler, BT Jonker, PM Thibado, RJ Wagner, BV Shanabrook, ...
Physical Review B 56 (13), 8163, 1997
2671997
Graphene as a tunnel barrier: graphene-based magnetic tunnel junctions
E Cobas, AL Friedman, OMJ van’t Erve, JT Robinson, BT Jonker
Nano letters 12 (6), 3000-3004, 2012
2532012
Magnetoresistance of Mn: Ge ferromagnetic nanoclusters in a diluted magnetic semiconductor matrix
YD Park, A Wilson, AT Hanbicki, JE Mattson, T Ambrose, G Spanos, ...
Applied Physics Letters 78 (18), 2739-2741, 2001
2512001
Twist angle-dependent atomic reconstruction and moiré patterns in transition metal dichalcogenide heterostructures
MR Rosenberger, HJ Chuang, M Phillips, VP Oleshko, KM McCreary, ...
ACS nano 14 (4), 4550-4558, 2020
2402020
Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts
CH Li, OMJ Van't Erve, BT Jonker
Nature Communications 2 (1), 245, 2011
2382011
Synthesis of Large-Area WS2 monolayers with Exceptional Photoluminescence
KM McCreary, AT Hanbicki, GG Jernigan, JC Culbertson, BT Jonker
Scientific reports 6 (1), 19159, 2016
2272016
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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