Complementary tunneling transistor for low power application PF Wang, K Hilsenbeck, T Nirschl, M Oswald, C Stepper, M Weis, ... Solid-State Electronics 48 (12), 2281-2286, 2004 | 554 | 2004 |
A vertical MOS-gated Esaki tunneling transistor in silicon W Hansch, C Fink, J Schulze, I Eisele Thin Solid Films 369 (1-2), 387-389, 2000 | 158 | 2000 |
Scaling properties and electromigration resistance of sputtered Ag metallization lines M Hauder, J Gstöttner, W Hansch, D Schmitt-Landsiedel Applied Physics Letters 78 (6), 838-840, 2001 | 154 | 2001 |
The tunneling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes T Nirschl, PF Wang, C Weber, J Sedlmeir, R Heinrich, R Kakoschke, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 107 | 2004 |
Scaling properties of the tunneling field effect transistor (TFET): Device and circuit T Nirschl, J Fischer, M Fulde, A Bargagli-Stoffi, M Sterkel, J Sedlmeir, ... Solid-state electronics 50 (1), 44-51, 2006 | 106 | 2006 |
Tunnel-field-effect-transistor based gas-sensor: Introducing gas detection with a quantum-mechanical transducer D Sarkar, H Gossner, W Hansch, K Banerjee Applied Physics Letters 102 (2), 2013 | 89 | 2013 |
Ozone-enhanced molecular beam deposition of nickel oxide (NiO) for sensor applications A Neubecker, T Pompl, T Doll, W Hansch, I Eisele Thin solid films 310 (1-2), 19-23, 1997 | 69 | 1997 |
Thermal stability of titanium nitride diffusion barrier films for advanced silver interconnects L Gao, J Gstöttner, R Emling, M Balden, C Linsmeier, A Wiltner, W Hansch, ... Microelectronic engineering 76 (1-4), 76-81, 2004 | 68 | 2004 |
The tunnelling field effect transistors (TFET): the temperature dependence, the simulation model, and its application T Nirschl, PF Wang, W Hansch, D Schmitt-Landsiedel 2004 IEEE International Symposium on Circuits and Systems (ISCAS) 3, III-713, 2004 | 62 | 2004 |
Simulation of the Esaki-tunneling FET PF Wang, T Nirschl, D Schmitt-Landsiedel, W Hansch Solid-State Electronics 47 (7), 1187-1192, 2003 | 59 | 2003 |
Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy W Hansch, A Nakajima, S Yokoyama Applied physics letters 75 (11), 1535-1537, 1999 | 44 | 1999 |
Performance improvement in vertical surface tunneling transistors by a boron surface phase W Hansch, P Borthen, J Schulze, C Fink, T Sulima, I Eisele Japanese Journal of Applied Physics 40 (5R), 3131, 2001 | 43 | 2001 |
The planar-doped-barrier-FET: MOSFET overcomes conventional limitations W Hansch, VR Rao, I Eisele 27th European Solid-State Device Research Conference, 624-627, 1997 | 41 | 1997 |
Electromigration resistance of sputtered silver lines using different patterning techniques M Hauder, W Hansch, J Gstöttner, D Schmitt-Landsiedel Microelectronic engineering 60 (1-2), 51-57, 2002 | 38 | 2002 |
Etching characteristics of Si and SiO2 with a low energy argon/hydrogen dc plasma source A Strass, W Hansch, P Bieringer, A Neubecker, F Kaesen, A Fischer, ... Surface and Coatings Technology 97 (1-3), 158-162, 1997 | 35 | 1997 |
Fabrication, optimization and application of complementary Multiple-Gate Tunneling FETs M Fulde, A Heigl, M Weis, M Wirnshofer, K Arnim, T Nirschl, M Sterkel, ... 2008 2nd IEEE International Nanoelectronics Conference, 579-584, 2008 | 30 | 2008 |
Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs W Hansch, VR Rao, C Fink, F Kaesen, I Eisele Thin solid films 321 (1-2), 206-214, 1998 | 30 | 1998 |
Fabrication and characterisation of thin low-temperature MBE-compatible silicon oxides of different stoichiometry A Strass, P Bieringer, W Hansch, V Fuenzalida, A Alvarez, J Luna, I Martil, ... Thin Solid Films 349 (1-2), 135-146, 1999 | 29 | 1999 |
Optimization of the channel doping profile of vertical sub-100 nm MOSFETs F Kaesen, C Fink, KG Anil, W Hansch, T Doll, T Grabolla, H Schreiber, ... Thin Solid Films 336 (1-2), 309-312, 1998 | 28 | 1998 |
Impact-ionization field-effect-transistor based biosensors for ultra-sensitive detection of biomolecules D Sarkar, H Gossner, W Hansch, K Banerjee Applied Physics Letters 102 (20), 2013 | 26 | 2013 |