| Electronic states and luminescence in porous silicon quantum dots: the role of oxygen MV Wolkin, J Jorne, PM Fauchet, G Allan, C Delerue Physical review letters 82 (1), 197, 1999 | 2553 | 1999 |
| Theoretical aspects of the luminescence of porous silicon C Delerue, G Allan, M Lannoo Physical Review B 48 (15), 11024, 1993 | 1379 | 1993 |
| Size-dependent optical properties of colloidal PbS quantum dots I Moreels, K Lambert, D Smeets, D De Muynck, T Nollet, JC Martins, ... ACS nano 3 (10), 3023-3030, 2009 | 1365 | 2009 |
| Electronic structure and optical properties of silicon crystallites: Application to porous silicon JP Proot, C Delerue, G Allan Appl. Phys. Lett. 61, 1948-1950, 1992 | 670 | 1992 |
| Nanostructures: theory and modeling CJ Delerue, M Lannoo Springer Science & Business Media, 2013 | 535 | 2013 |
| Quantum confinement in germanium nanocrystals YM Niquet, G Allan, C Delerue, M Lannoo Applied Physics Letters 77 (8), 1182-1184, 2000 | 444 | 2000 |
| Nature of luminescent surface states of semiconductor nanocrystallites G Allan, C Delerue, M Lannoo Physical review letters 76 (16), 2961, 1996 | 439 | 1996 |
| Confinement effects in PbSe quantum wells and nanocrystals G Allan, C Delerue Physical Review B—Condensed Matter and Materials Physics 70 (24), 245321, 2004 | 346 | 2004 |
| Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement M Diarra, YM Niquet, C Delerue, G Allan Physical Review B—Condensed Matter and Materials Physics 75 (4), 045301, 2007 | 333 | 2007 |
| Assessment of carrier-multiplication efficiency in bulk PbSe and PbS JJH Pijpers, R Ulbricht, KJ Tielrooij, A Osherov, Y Golan, C Delerue, ... Nature Physics 5 (11), 811-814, 2009 | 314 | 2009 |
| Screening in semiconductor nanocrystallites and its consequences for porous silicon M Lannoo, C Delerue, G Allan Physical review letters 74 (17), 3415, 1995 | 298 | 1995 |
| Method for tight-binding parametrization: Application to silicon nanostructures YM Niquet, C Delerue, G Allan, M Lannoo Physical Review B 62 (8), 5109, 2000 | 291 | 2000 |
| Electronic structure of semiconductor nanowires YM Niquet, A Lherbier, NH Quang, MV Fernández-Serra, X Blase, ... Physical Review B—Condensed Matter and Materials Physics 73 (16), 165319, 2006 | 263 | 2006 |
| Electronic structure of amorphous silicon nanoclusters G Allan, C Delerue, M Lannoo Physical review letters 78 (16), 3161, 1997 | 258 | 1997 |
| Frequency-Dependent Spontaneous Emission Rate from CdSe and CdTe Nanocrystals:<? format?> Influence of Dark States AF Van Driel, G Allan, C Delerue, P Lodahl, WL Vos, D Vanmaekelbergh Physical Review Letters 95 (23), 236804, 2005 | 254 | 2005 |
| Theory of electrical rectification in a molecular monolayer C Krzeminski, C Delerue, G Allan, D Vuillaume, RM Metzger Physical Review B 64 (8), 085405, 2001 | 248 | 2001 |
| Transition-metal impurities in semiconductors and heterojunction band lineups JM Langer, C Delerue, M Lannoo, H Heinrich Physical Review B 38 (11), 7723, 1988 | 244 | 1988 |
| Excitonic and quasiparticle gaps in Si nanocrystals C Delerue, M Lannoo, G Allan Physical review letters 84 (11), 2457, 2000 | 234 | 2000 |
| Molecular rectifying diodes from self-assembly on silicon S Lenfant, C Krzeminski, C Delerue, G Allan, D Vuillaume Nano letters 3 (6), 741-746, 2003 | 213 | 2003 |
| Concept of dielectric constant for nanosized systems C Delerue, M Lannoo, G Allan Physical Review B 68 (11), 115411, 2003 | 212 | 2003 |