Excitonic photoluminescence from Si-capped strained D Dutartre, G Bremond, A Souifi, T Benyattou
Physical Review B 44 (20), 11525, 1991
131 1991 Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP (001) J Brault, M Gendry, G Grenet, G Hollinger, J Olivares, B Salem, ...
Journal of applied physics 92 (1), 506-510, 2002
116 2002 From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001) M Gendry, C Monat, J Brault, P Regreny, G Hollinger, B Salem, G Guillot, ...
Journal of applied physics 95 (9), 4761-4766, 2004
111 2004 Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevice fabrication S Decossas, F Mazen, T Baron, G Brémond, A Souifi
Nanotechnology 14 (12), 1272, 2003
107 2003 Formation mechanisms of ZnO nanowires: the crucial role of crystal orientation and polarity S Guillemin, L Rapenne, H Roussel, E Sarigiannidou, G Brémond, ...
The Journal of Physical Chemistry C 117 (40), 20738-20745, 2013
85 2013 The acceptor level of vanadium in III–V compounds B Clerjaud, C Naud, B Deveaud, B Lambert, B Plot, G Bremond, ...
Journal of applied physics 58 (11), 4207-4215, 1985
85 1985 Optical properties of silicon nanocrystal LEDs J De La Torre, A Souifi, A Poncet, C Busseret, M Lemiti, G Bremond, ...
Physica E: Low-dimensional Systems and Nanostructures 16 (3-4), 326-330, 2003
79 2003 Influence of the chemical properties of the substrate on silicon quantum dot nucleation F Mazen, T Baron, G Brémond, N Buffet, N Rochat, P Mur, MN Séméria
Journal of the Electrochemical Society 150 (3), G203, 2003
68 2003 Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP (001) P Miska, J Even, C Platz, B Salem, T Benyattou, C Bru-Chevalier, ...
Journal of applied physics 95 (3), 1074-1080, 2004
63 2004 Deep level spectroscopy in InP: Fe G Bremond, A Nouailhat, G Guillot, B Cockayne
Electronics Letters 17 (1), 55-56, 1981
63 1981 Controlling the structural properties of single step, dip coated ZnO seed layers for growing perfectly aligned nanowire arrays S Guillemin, E Appert, H Roussel, B Doisneau, R Parize, T Boudou, ...
The Journal of Physical Chemistry C 119 (37), 21694-21703, 2015
57 2015 Optical properties of self-assembled InAs quantum islands grown on InP (001) vicinal substrates B Salem, J Olivares, G Guillot, G Bremond, J Brault, C Monat, M Gendry, ...
Applied Physics Letters 79 (26), 4435-4437, 2001
48 2001 Electrical and optical characterisation of vanadium in 4H and 6H–SiC V Lauer, G Brémond, A Souifi, G Guillot, K Chourou, M Anikin, R Madar, ...
Materials Science and Engineering: B 61, 248-252, 1999
48 1999 Photoluminescence and electrical characterization of SiGe/Si heterostructures grown by rapid thermal chemical vapour deposition G Bremond, A Souifi, T Benyattou, D Dutartre
Thin Solid Films 222 (1-2), 60-68, 1992
47 1992 Characterization of semiconducting iron disilicide obtained by LRP/CVD J Regolini, F Trincat, I Sagnes, Y Shapira, G Bremond, D Bensahel
IEEE transactions on electron devices 39 (1), 200-201, 1992
47 1992 Using silicon nanostructures for the improvement of silicon solar cells' efficiency J De la Torre, G Bremond, M Lemiti, G Guillot, P Mur, N Buffet
Thin Solid Films 511, 163-166, 2006
46 2006 Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP (001) B Salem, T Benyattou, G Guillot, C Bru-Chevallier, G Bremond, C Monat, ...
Physical Review B 66 (19), 193305, 2002
46 2002 Fe deep level optical spectroscopy in InP G Bremond, A Nouailhat, G Guillot, B Cockayne
Solid State Communications 41 (6), 477-481, 1982
45 1982 Photoluminescence and optical absorption properties of silicon quantum dots embedded in Si-rich silicon nitride matrices B Rezgui, A Sibai, T Nychyporuk, M Lemiti, G Brémond
Journal of Luminescence 129 (12), 1744-1746, 2009
43 2009 Strain dependence of indirect band gap for strained silicon on insulator wafers J Munguía, G Bremond, JM Bluet, JM Hartmann, M Mermoux
Applied Physics Letters 93 (10), 2008
41 2008 