Articoli con mandati relativi all'accesso pubblico - Guido GroesenekenUlteriori informazioni
Non disponibili pubblicamente: 55
Tunnel field-effect transistor without gate-drain overlap
AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken
Applied Physics Letters 91 (5), 2007
Mandati: Research Foundation (Flanders)
Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates
AS Verhulst, WG Vandenberghe, K Maex, S De Gendt, MM Heyns, ...
IEEE electron device letters 29 (12), 1398-1401, 2008
Mandati: Research Foundation (Flanders)
Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization
AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken
Journal of Applied Physics 104 (6), 2008
Mandati: Research Foundation (Flanders)
Analytical model for a tunnel field-effect transistor
WG Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus
MELECON 2008-The 14th IEEE mediterranean electrotechnical conference, 923-928, 2008
Mandati: Research Foundation (Flanders)
Filament observation in metal-oxide resistive switching devices
U Celano, Y Yin Chen, DJ Wouters, G Groeseneken, M Jurczak, ...
Applied Physics Letters 102 (12), 2013
Mandati: Research Foundation (Flanders)
Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications
J Zhuge, AS Verhulst, WG Vandenberghe, W Dehaene, R Huang, Y Wang, ...
Semiconductor Science and Technology 26 (8), 085001, 2011
Mandati: Research Foundation (Flanders)
Energy distribution of positive charges in gate dielectric: Probing technique and impacts of different defects
SWM Hatta, Z Ji, JF Zhang, M Duan, WD Zhang, N Soin, B Kaczer, ...
IEEE Transactions on Electron Devices 60 (5), 1745-1753, 2013
Mandati: UK Engineering and Physical Sciences Research Council
Implications of BTI-induced time-dependent statistics on yield estimation of digital circuits
P Weckx, B Kaczer, M Toledano-Luque, P Raghavan, J Franco, ...
IEEE Transactions on Electron Devices 61 (3), 666-673, 2014
Mandati: Research Foundation (Flanders)
Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology
P Weckx, B Kaczer, C Chen, J Franco, E Bury, K Chanda, J Watt, ...
2015 IEEE International Reliability Physics Symposium, 3B. 1.1-3B. 1.6, 2015
Mandati: Research Foundation (Flanders)
Experimental validation of self-heating simulations and projections for transistors in deeply scaled nodes
E Bury, B Kaczer, P Roussel, R Ritzenthaler, K Raleva, D Vasileska, ...
2014 IEEE International Reliability Physics Symposium, XT. 8.1-XT. 8.6, 2014
Mandati: Research Foundation (Flanders)
T-diodes-a novel plug-and-play wideband RF circuit ESD protection methodology
D Linten, S Thijs, J Borremans, M Dehan, D Tremouilles, M Scholz, ...
2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007
Mandati: Research Foundation (Flanders)
A model determining optimal doping concentration and material’s band gap of tunnel field-effect transistors
WG Vandenberghe, AS Verhulst, KH Kao, KD Meyer, B Sorée, W Magnus, ...
Applied Physics Letters 100 (19), 2012
Mandati: Research Foundation (Flanders)
Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests
J Hu, S Stoffels, M Zhao, AN Tallarico, I Rossetto, M Meneghini, X Kang, ...
IEEE Electron Device Letters 38 (3), 371-374, 2017
Mandati: European Commission
Characterization of self-heating in high-mobility Ge FinFET pMOS devices
E Bury, B Kaczer, J Mitard, N Collaert, NS Khatami, Z Aksamija, ...
2015 Symposium on VLSI Technology (VLSI Technology), T60-T61, 2015
Mandati: Research Foundation (Flanders)
Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology
H Kükner, M Khatib, S Morrison, P Weckx, P Raghavan, B Kaczer, ...
Fifteenth International Symposium on Quality Electronic Design, 473-479, 2014
Mandati: Research Foundation (Flanders)
Methodologies for sub-1nm EOT TDDB evaluation
T Kauerauf, R Degraeve, LÅ Ragnarsson, P Roussel, S Sahhaf, ...
2011 International Reliability Physics Symposium, 2A. 2.1-2A. 2.10, 2011
Mandati: Science Foundation Ireland
Predictive As-grown-Generation (AG) model for BTI-induced device/circuit level variations in nanoscale technology nodes
R Gao, Z Ji, SM Hatta, JF Zhang, J Franco, B Kaczer, W Zhang, M Duan, ...
2016 IEEE International Electron Devices Meeting (IEDM), 31.4. 1-31.4. 4, 2016
Mandati: UK Engineering and Physical Sciences Research Council
Non-Monte-Carlo methodology for high-sigma simulations of circuits under workload-dependent BTI degradation—Application to 6T SRAM
P Weckx, B Kaczer, H Kukner, J Roussel, P Raghavan, F Catthoor, ...
2014 IEEE International Reliability Physics Symposium, 5D. 2.1-5D. 2.6, 2014
Mandati: Research Foundation (Flanders)
Perspective of tunnel-FET for future low-power technology nodes
AS Verhulst, D Verreck, Q Smets, KH Kao, M Van de Put, R Rooyackers, ...
2014 IEEE International Electron Devices Meeting, 30.2. 1-30.2. 4, 2014
Mandati: Research Foundation (Flanders)
A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics
E Amat, T Kauerauf, R Rodríguez, M Nafría, X Aymerich, R Degraeve, ...
Microelectronic engineering 103, 144-149, 2013
Mandati: Government of Spain
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