A reliable approach to charge-pumping measurements in MOS transistors G Groeseneken, HE Maes, N Beltran, RF De Keersmaecker
IEEE Transactions on Electron Devices 31 (1), 42-53, 1984
1573 1984 New insights in the relation between electron trap generation and the statistical properties of oxide breakdown R Degraeve, G Groeseneken, R Bellens, JL Ogier, M Depas, PJ Roussel, ...
IEEE Transactions on Electron Devices 45 (4), 904-911, 1998
765 1998 Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation P Heremans, J Witters, G Groeseneken, HE Maes
IEEE transactions on Electron Devices 36 (7), 1318-1335, 1989
522 1989 Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs P Heremans, R Bellens, G Groeseneken, HE Maes
IEEE Transactions on Electron Devices 35 (12), 2194-2209, 1988
488 1988 Direct and indirect band-to-band tunneling in germanium-based TFETs KH Kao, AS Verhulst, WG Vandenberghe, B Soree, G Groeseneken, ...
IEEE Transactions on Electron Devices 59 (2), 292-301, 2011
487 2011 Tunnel field-effect transistor without gate-drain overlap AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken
Applied Physics Letters 91 (5), 2007
482 2007 A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides R Degraeve, G Groeseneken, R Bellens, M Depas, HE Maes
Proceedings of International Electron Devices Meeting, 863-866, 1995
467 1995 On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ...
IEEE Transactions on Electron Devices 55 (2), 547-556, 2008
456 2008 Origin of the threshold voltage instability in SiO2 /HfO2 dual layer gate dielectrics A Kerber, E Cartier, L Pantisano, R Degraeve, T Kauerauf, Y Kim, A Hou, ...
IEEE Electron Device Letters 24 (2), 87-89, 2003
436 2003 Origin of NBTI variability in deeply scaled pFETs B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ...
2010 IEEE International Reliability Physics Symposium, 26-32, 2010
381 2010 Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions M Houssa, L Pantisano, LÅ Ragnarsson, R Degraeve, T Schram, ...
Materials Science and Engineering: R: Reports 51 (4-6), 37-85, 2006
336 2006 Ubiquitous relaxation in BTI stressing—New evaluation and insights B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ...
2008 IEEE International Reliability Physics Symposium, 20-27, 2008
310 2008 Endurance/Retention Trade-off on YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ...
IEEE Transactions on electron devices 60 (3), 1114-1121, 2013
292 2013 Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor AS Verhulst, B Sorée, D Leonelli, WG Vandenberghe, G Groeseneken
Journal of Applied Physics 107 (2), 2010
281 2010 Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability B Kaczer, R Degraeve, M Rasras, K Van de Mieroop, PJ Roussel, ...
IEEE Transactions on Electron Devices 49 (3), 500-506, 2002
239 2002 Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification B Kaczer, V Arkhipov, R Degraeve, N Collaert, G Groeseneken, ...
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings …, 2005
229 2005 Temperature dependence of threshold voltage in thin-film SOI MOSFETs G Groeseneken, JP Colinge, HE Maes, JC Alderman, S Holt
IEEE electron device letters 11 (8), 329-331, 1990
226 1990 Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates AS Verhulst, WG Vandenberghe, K Maex, S De Gendt, MM Heyns, ...
IEEE electron device letters 29 (12), 1398-1401, 2008
222 2008 Balancing SET/RESET Pulse for YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ...
IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012
221 2012 Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction R Degraeve, B Kaczer, G Groeseneken
Microelectronics Reliability 39 (10), 1445-1460, 1999
220 1999