Articoli con mandati relativi all'accesso pubblico - Dr. Veeresh DeshpandeUlteriori informazioni
Non disponibili pubblicamente: 7
Three-dimensional monolithic integration of III–V and Si (Ge) FETs for hybrid CMOS and beyond
V Deshpande, V Djara, E O’Connor, P Hashemi, T Morf, K Balakrishnan, ...
Japanese Journal of Applied Physics 56 (4S), 04CA05, 2017
Mandati: European Commission
InGaAs-on-insulator MOSFETs featuring scaled logic devices and record RF performance
CB Zota, C Convertino, V Deshpande, T Merkle, M Sousa, D Caimi, ...
2018 IEEE Symposium on VLSI Technology, 165-166, 2018
Mandati: European Commission
First demonstration of 3D SRAM through 3D monolithic integration of InGaAs n-FinFETs on FDSOI Si CMOS with inter-layer contacts
V Deshpande, H Hahn, E O'Connor, Y Baumgartner, M Sousa, D Caimi, ...
2017 Symposium on VLSI Technology, T74-T75, 2017
Mandati: European Commission
Demonstration of 3-D SRAM cell by 3-D monolithic integration of InGaAs n-FinFETs on FDSOI CMOS with interlayer contacts
V Deshpande, H Hahn, E O’Connor, Y Baumgartner, D Caimi, M Sousa, ...
IEEE Transactions on Electron Devices 64 (11), 4503-4509, 2017
Mandati: European Commission
First rf characterization of ingaas replacement metal gate (rmg) nfets on sige-oi finfets fabricated by 3d monolithic integration
V Deshpande, V Djara, E O'Connor, D Caimi, M Sousa, L Czornomaz, ...
2016 Joint International EUROSOI Workshop and International Conference on …, 2016
Mandati: European Commission
Hybrid InGaAs/SiGe CMOS circuits with 2D and 3D monolithic integration
V Deshpande, H Hahn, V Djara, E O'Connor, D Caimi, M Sousa, ...
2017 47th European Solid-State Device Research Conference (ESSDERC), 244-247, 2017
Mandati: European Commission
Indigenous back-end-of-line compatible SiO2-based One-Time Programmable Memory for Secured Spiking Neural Network Inference Accelerator
S Deshmukh, A Biswas, A Kadam, AK Singh, V Deshpande, U Ganguly
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024
Mandati: Department of Science & Technology, India
Disponibili pubblicamente: 15
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
JPB Silva, R Alcala, UE Avci, N Barrett, L Bégon-Lours, M Borg, S Byun, ...
APL Materials 11 (8), 2023
Mandati: Swiss National Science Foundation, European Commission, Agence Nationale de …
Self-aligned gates for scalable silicon quantum computing
S Geyer, LC Camenzind, L Czornomaz, V Deshpande, A Fuhrer, ...
Applied Physics Letters 118 (10), 2021
Mandati: Swiss National Science Foundation, European Commission
Ambipolar quantum dots in undoped silicon fin field-effect transistors
AV Kuhlmann, V Deshpande, LC Camenzind, DM Zumbühl, A Fuhrer
Applied Physics Letters 113 (12), 2018
Mandati: Swiss National Science Foundation
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
H Hahn, V Deshpande, E Caruso, S Sant, E O'Connor, Y Baumgartner, ...
2017 IEEE International Electron Devices Meeting (IEDM), 17.5. 1-17.5. 4, 2017
Mandati: European Commission
CMOS back-end-of-line compatible ferroelectric tunnel junction devices
V Deshpande, KS Nair, M Holzer, S Banerjee, C Dubourdieu
Solid-State Electronics 186, 108054, 2021
Mandati: European Commission
DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
V Deshpande, V Djara, E O'Connor, P Hashemi, K Balakrishnan, D Caimi, ...
Solid-State Electronics 128, 87-91, 2017
Mandati: European Commission
Cycling Waveform Dependent Wake-Up and ON/OFF Ratio in Al2O3/Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction Devices
K Shajil Nair, M Holzer, C Dubourdieu, V Deshpande
ACS Applied Electronic Materials 5 (3), 1478-1488, 2023
Mandati: European Commission
A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron
P Gibertini, L Fehlings, S Lancaster, QT Duong, T Mikolajick, ...
2022 29th IEEE International Conference on Electronics, Circuits and Systems …, 2022
Mandati: European Commission
Sub-10 nm Probing of Ferroelectricity in Heterogeneous Materials by Machine Learning Enabled Contact Kelvin Probe Force Microscopy
SW Schmitt, RK Vasudevan, M Seifert, AY Borisevich, V Deshpande, ...
ACS Applied Electronic Materials 3 (10), 4409-4417, 2021
Mandati: US Department of Energy
Electrically induced cancellation and inversion of piezoelectricity in ferroelectric Hf0.5Zr0.5O2
H Lu, DJ Kim, H Aramberri, M Holzer, P Buragohain, S Dutta, U Schroeder, ...
Nature Communications 15 (1), 860, 2024
Mandati: European Commission, Luxembourg National Research Fund
Highly oriented crystalline si on epitaxial Gd2O3/Si (111) substrate using low-cost Radio Frequency sputtering for Silicon on Insulator application
S Patil, S Kumar, AH Pandey, S Bhunia, B Kamaliya, A Sharma, ...
Thin Solid Films 793, 140272, 2024
Mandati: Department of Science & Technology, India
Shaping single crystalline BaTiO3 nanostructures by focused neon or helium ion milling
II Olaniyan, SW Schmitt, J Albert, JG Fernandez, C Marcelot, R Cours, ...
Nanotechnology 35 (33), 335301, 2024
Mandati: Helmholtz Association, Agence Nationale de la Recherche
Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for the TCAM, Storage, and In-Memory Computing Applications
P Meihar, R Srinu, S Lashkare, AK Singh, H Mulaosmanovic, ...
IEEE Transactions on Electron Devices, 2024
Mandati: Department of Science & Technology, India
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