Articoli con mandati relativi all'accesso pubblico - Armin DadgarUlteriori informazioni
Non disponibili pubblicamente: 30
MOVPE growth of GaN on Si–Substrates and strain
A Dadgar, P Veit, F Schulze, J Bläsing, A Krtschil, H Witte, A Diez, ...
Thin Solid Films 515 (10), 4356-4361, 2007
Mandati: German Research Foundation
High-performance 500 V quasi-and fully-vertical GaN-on-Si pn diodes
Y Zhang, D Piedra, M Sun, J Hennig, A Dadgar, L Yu, T Palacios
IEEE Electron Device Letters 38 (2), 248-251, 2016
Mandati: US Department of Energy
All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications
S Neugebauer, MP Hoffmann, H Witte, J Bläsing, A Dadgar, A Strittmatter, ...
Applied Physics Letters 110 (10), 2017
Mandati: German Research Foundation
Thermal stability of metal organic vapor phase epitaxy grown AlInN
A Gadanecz, J Bläsing, A Dadgar, C Hums, A Krost
Applied physics letters 90 (22), 2007
Mandati: German Research Foundation
Germanium–the superior dopant in n‐type GaN
C Nenstiel, M Bügler, G Callsen, F Nippert, T Kure, S Fritze, A Dadgar, ...
physica status solidi (RRL)–Rapid Research Letters 9 (12), 716-721, 2015
Mandati: German Research Foundation
Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators
K Brueckner, F Niebelschuetz, K Tonisch, S Michael, A Dadgar, A Krost, ...
Applied Physics Letters 93 (17), 2008
Mandati: German Research Foundation
Anisotropy of effective electron masses in highly doped nonpolar GaN
M Feneberg, K Lange, C Lidig, M Wieneke, H Witte, J Bläsing, A Dadgar, ...
Applied Physics Letters 103 (23), 2013
Mandati: German Research Foundation
Growth of single-domain GaN layers on Si (0 0 1) by metalorganic vapor-phase epitaxy
F Schulze, A Dadgar, J Bläsing, T Hempel, A Diez, J Christen, A Krost
Journal of crystal growth 289 (2), 485-488, 2006
Mandati: German Research Foundation
Eliminating stacking faults in semi-polar GaN by AlN interlayers
A Dadgar, R Ravash, P Veit, G Schmidt, M Müller, A Dempewolf, ...
Applied Physics Letters 99 (2), 2011
Mandati: German Research Foundation
Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
C Berger, A Dadgar, J Bläsing, A Lesnik, P Veit, G Schmidt, T Hempel, ...
Journal of Crystal Growth 414, 105-109, 2015
Mandati: German Research Foundation
Strain evaluation in AlInN/GaN Bragg mirrors by in situ curvature measurements and ex situ x-ray grazing incidence and transmission scattering
A Krost, C Berger, J Bläsing, A Franke, T Hempel, A Dadgar, J Christen
Applied Physics Letters 97 (18), 2010
Mandati: German Research Foundation
In-situ growth monitoring of AlInN/AlGaN distributed Bragg reflectors for the UV-spectral range
C Berger, A Dadgar, J Bläsing, A Krost
Journal of crystal growth 370, 87-91, 2013
Mandati: German Research Foundation
MOVPE growth of semi-polar GaN light-emitting diode structures on planar Si (112) and Si (113) substrates
R Ravash, A Dadgar, F Bertram, A Dempewolf, S Metzner, T Hempel, ...
Journal of crystal growth 370, 288-292, 2013
Mandati: German Research Foundation
Crystallographic and electric properties of MOVPE-grown AlGaN/GaN-based FETs on Si (0 0 1) substrates
F Schulze, O Kisel, A Dadgar, A Krtschil, J Bläsing, M Kunze, I Daumiller, ...
Journal of crystal growth 299 (2), 399-403, 2007
Mandati: German Research Foundation
Green to blue polarization compensated c-axis oriented multi-quantum wells by AlGaInN barrier layers
A Dadgar, L Groh, S Metzner, S Neugebauer, J Bläsing, T Hempel, ...
Applied Physics Letters 102 (6), 2013
Mandati: German Research Foundation
Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN: Ge modulation doping
C Berger, A Lesnik, T Zettler, G Schmidt, P Veit, A Dadgar, J Bläsing, ...
Journal of Crystal Growth 440, 6-12, 2016
Mandati: German Research Foundation
Stranski–Krastanov transition and self-organized structures in low-strained AlInN/GaN multilayer structures
A Krost, C Berger, P Moser, J Bläsing, A Dadgar, C Hums, T Hempel, ...
Semiconductor science and technology 26 (1), 014041, 2010
Mandati: German Research Foundation
Strain profiling of AlInN/GaN distributed Bragg reflectors using in situ curvature measurements and ex situ X-ray diffraction
C Berger, P Moser, A Dadgar, J Bläsing, R Clos, A Krost
Materials Science and Engineering: A 528 (1), 58-64, 2010
Mandati: German Research Foundation
Clustered quantum dots in single GaN islands formed at threading dislocations
G Schmidt, P Veit, C Berger, F Bertram, A Dadgar, A Strittmatter, ...
Japanese Journal of Applied Physics 55 (5S), 05FF04, 2016
Mandati: German Research Foundation
Understanding high-energy 75-MeV sulfur-ion irradiation-induced degradation in GaN-based heterostructures: the role of the GaN channel layer
SR Challa, NA Vega, NA Mueller, C Kristukat, ME Debray, H Witte, ...
IEEE Transactions on Electron Devices 68 (1), 24-28, 2020
Mandati: Federal Ministry of Education and Research, Germany
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