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Evan M Anderson
Titolo
Citata da
Citata da
Anno
Atomic Precision Advanced Manufacturing for Digital Electronics
DR Ward, SW Schmucker, EM Anderson, E Bussmann, L Tracy, TM Lu, ...
Electronic Device Failure Analysis 22 (1), 4-10, 2020
412020
The influence of growth temperature on Sb incorporation in InAsSb, and the temperature-dependent impact of Bi surfactants
WL Sarney, SP Svensson, EM Anderson, AM Lundquist, C Pearson, ...
Journal of crystal growth 406, 8-11, 2014
162014
Low thermal budget high-k/metal surface gate for buried donor-based devices
EM Anderson, DAM Campbell, LN Maurer, AD Baczewski, MT Marshall, ...
Journal of Physics: Materials 3 (3), 035002, 2020
122020
Incorporation kinetics in mixed anion compound semiconductor alloys
JM Millunchick, EM Anderson, C Pearson, WL Sarney, SP Svensson
Journal of Applied Physics 114 (23), 2013
122013
Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry
AM Katzenmeyer, TS Luk, E Bussmann, S Young, EM Anderson, ...
Journal of Materials Research 35 (16), 2098-2105, 2020
112020
Influence of a Bi surfactant on Sb incorporation in InAsSb alloys
EM Anderson, AM Lundquist, WL Sarney, SP Svensson, PJ Carrington, ...
Journal of Applied Physics 116 (1), 2014
102014
Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
AM Katzenmeyer, S Dmitrovic, AD Baczewski, Q Campbell, E Bussmann, ...
Journal of Micro/Nanopatterning, Materials, and Metrology 20 (1), 014901-014901, 2021
72021
Monolithically fabricated tunable long-wave infrared detectors based on dynamic graphene metasurfaces
MD Goldflam, I Ruiz, SW Howell, A Tauke-Pedretti, EM Anderson, ...
Applied Physics Letters 116 (19), 2020
62020
Quantum Transport in Si: P δ-Layer Wires
JP Mendez, D Mamaluy, X Gao, EM Anderson, DAM Campbell, JA Ivie, ...
2020 International Conference on Simulation of Semiconductor Processes and …, 0
6*
Accelerated lifetime testing and analysis of delta-doped silicon test structures
C Halsey, J Depoy, DAM Campbell, DR Ward, EM Anderson, ...
IEEE Transactions on Device and Materials Reliability 22 (2), 169-174, 2022
52022
Resonant ultrathin infrared detectors enabling high quantum efficiency
DW Peters, MD Goldflam, S Campione, PS Finnegan, JK Kim, MB Sinclair, ...
2018 IEEE Research and Applications of Photonics In Defense Conference …, 2018
52018
The atomistic mechanism for Sb segregation and As displacement of Sb in InSb (001) surfaces
EM Anderson, JM Millunchick
Surface Science 667, 45-53, 2018
52018
Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing Devices
X Gao, LA Tracy, EM Anderson, DAM Campbell, JA Ivie, TM Lu, ...
2020 International Conference on Simulation of Semiconductor Processes and …, 0
5*
Full-Resolution Two-Color Infrared Detector.
E Anderson, DA Campbell, J Briscoe, W Coon, C Alford, M Wood, J Klem, ...
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2021
42021
Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques
AM Katzenmeyer, S Dmitrovic, AD Baczewski, E Bussmann, TM Lu, ...
Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020 …, 2020
42020
Path towards a vertical TFET enabled by atomic precision advanced manufacturing
TM Lu, X Gao, EM Anderson, JP Mendez, DAM Campbell, JA Ivie, ...
2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021
32021
Low-temperature silicon epitaxy for atomic precision devices
EM Anderson, AM Katzenmeyer, TS Luk, DAM Campbell, MT Marshall, ...
ECS Transactions 93 (1), 37, 2019
22019
Interactions between Sb and As on InAs (0 0 1) surfaces
EM Anderson, JM Millunchick
Journal of Crystal Growth 500, 68-73, 2018
22018
Surface intermixing by atomic scale roughening in Sb-terminated InAs
EM Anderson, AM Lundquist, C Pearson, JM Millunchick
Journal of Applied Physics 121 (9), 2017
22017
Growth temperature and surfactant effects on the properties of mixed group V alloys
SP Svensson, WL Sarney, BC Connelly, EM Anderson, JM Millunchick
Journal of Crystal Growth 425, 234-236, 2015
22015
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–20