Cobalt etch back J Yang, B Zhou, M Shen, T Lill, J Hoang US Patent 9,870,899, 2018 | 179 | 2018 |
Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits TT Van, J Hoang, R Ostroumov, KL Wang, JR Bargar, J Lu, HO Blom, ... Journal of applied physics 100 (7), 2006 | 39 | 2006 |
Feature profile evolution during shallow trench isolation etch in chlorine-based plasmas. I. Feature scale modeling J Hoang, CC Hsu, JP Chang Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 37 | 2008 |
Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition J Hoang, TT Van, M Sawkar-Mathur, B Hoex, MCM Van de Sanden, ... Journal of applied physics 101 (12), 2007 | 36 | 2007 |
Liner and barrier applications for subtractive metal integration HJ Wu, TJ Knisley, N Shankar, M Shen, J Hoang, P Sharma US Patent 9,899,234, 2018 | 24 | 2018 |
Review on recent progress in patterning phase change materials M Shen, T Lill, N Altieri, J Hoang, S Chiou, J Sims, A McKerrow, ... Journal of Vacuum Science & Technology A 38 (6), 2020 | 19 | 2020 |
Cobalt etch back J Yang, B Zhou, M Shen, T Lill, J Hoang US Patent 10,784,086, 2020 | 19 | 2020 |
Time-resolved surface infrared spectroscopy during atomic layer deposition BA Sperling, J Hoang, WA Kimes, JE Maslar Applied spectroscopy 67 (9), 1003-1012, 2013 | 19 | 2013 |
Time-resolved surface infrared spectroscopy during atomic layer deposition of TiO2 using tetrakis (dimethylamido) titanium and water BA Sperling, J Hoang, WA Kimes, JE Maslar, KL Steffens, NV Nguyen Journal of Vacuum Science & Technology A 32 (3), 2014 | 17 | 2014 |
Dry etching in the presence of physisorption of neutrals at lower temperatures T Lill, IL Berry, M Shen, J Hoang, A Fischer, T Panagopoulos, JP Chang, ... Journal of Vacuum Science & Technology A 41 (2), 2023 | 16 | 2023 |
The effects of energy transfer on the Er3+ 1.54 μm luminescence in nanostructured Y2O3 thin films with heterogeneously distributed Yb3+ and Er3+ codopants J Hoang, RN Schwartz, KL Wang, JP Chang Journal of Applied Physics 112 (6), 2012 | 13 | 2012 |
Er 3 interlayer energy migration as the limiting photoluminescence quenching factor in nanostructured Er 3: Y2O3 thin films J Hoang, RN Schwartz, KL Wang, JP Chang Journal of Applied Physics 112, 023116, 2012 | 12 | 2012 |
Feature profile evolution during shallow trench isolation etch in chlorine-based plasmas. II. Coupling reactor and feature scale models CC Hsu, J Hoang, V Le, JP Chang Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 12 | 2008 |
Progress report on high aspect ratio patterning for memory devices M Shen, T Lill, J Hoang, H Chi, A Routzahn, J Church, P Subramonium, ... Japanese Journal of Applied Physics 62 (SI), SI0801, 2023 | 11 | 2023 |
Conformal damage-free encapsulation of chalcogenide materials JS Sims, AJ McKerrow, M Shen, T Lill, S Tang, KM Kelchner, J Hoang, ... US Patent 11,239,420, 2022 | 8 | 2022 |
Feature profile evolution during shallow trench isolation etching in chlorine-based plasmas. III. The effect of oxygen addition C Hsu, N Marchack, RM Martin, C Pham, J Hoang, JP Chang Journal of Vacuum Science & Technology B 31 (4), 2013 | 7 | 2013 |
Method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber M Titus, G Kamarthy, H Singh, Y Kimura, M Shen, B Zhou, Y Zhou, ... US Patent 9,589,853, 2017 | 5 | 2017 |
Method to etch copper barrier film M Shen, J Zhu, S Huang, B Zhou, J Hoang, P Sharma, T Lill US Patent 9,570,320, 2017 | 4 | 2017 |
A new etch planarization technology to correct non-uniformity post chemical mechanical polishing M Shen, B Zhou, Y Zhou, J Hoang, J Bowers, AD Bailey, E Pape, H Singh, ... IEEE Transactions on Semiconductor Manufacturing 28 (4), 502-507, 2015 | 4 | 2015 |
Measurements of metal alkylamide density during atomic layer deposition using a mid-infrared light-emitting diode (LED) source JE Maslar, J Hoang, WA Kimes, BA Sperling Applied Spectroscopy 69 (3), 332-341, 2015 | 4 | 2015 |