Segui
John Hoang
Titolo
Citata da
Citata da
Anno
Cobalt etch back
J Yang, B Zhou, M Shen, T Lill, J Hoang
US Patent 9,870,899, 2018
1792018
Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits
TT Van, J Hoang, R Ostroumov, KL Wang, JR Bargar, J Lu, HO Blom, ...
Journal of applied physics 100 (7), 2006
392006
Feature profile evolution during shallow trench isolation etch in chlorine-based plasmas. I. Feature scale modeling
J Hoang, CC Hsu, JP Chang
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
372008
Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition
J Hoang, TT Van, M Sawkar-Mathur, B Hoex, MCM Van de Sanden, ...
Journal of applied physics 101 (12), 2007
362007
Liner and barrier applications for subtractive metal integration
HJ Wu, TJ Knisley, N Shankar, M Shen, J Hoang, P Sharma
US Patent 9,899,234, 2018
242018
Review on recent progress in patterning phase change materials
M Shen, T Lill, N Altieri, J Hoang, S Chiou, J Sims, A McKerrow, ...
Journal of Vacuum Science & Technology A 38 (6), 2020
192020
Cobalt etch back
J Yang, B Zhou, M Shen, T Lill, J Hoang
US Patent 10,784,086, 2020
192020
Time-resolved surface infrared spectroscopy during atomic layer deposition
BA Sperling, J Hoang, WA Kimes, JE Maslar
Applied spectroscopy 67 (9), 1003-1012, 2013
192013
Time-resolved surface infrared spectroscopy during atomic layer deposition of TiO2 using tetrakis (dimethylamido) titanium and water
BA Sperling, J Hoang, WA Kimes, JE Maslar, KL Steffens, NV Nguyen
Journal of Vacuum Science & Technology A 32 (3), 2014
172014
Dry etching in the presence of physisorption of neutrals at lower temperatures
T Lill, IL Berry, M Shen, J Hoang, A Fischer, T Panagopoulos, JP Chang, ...
Journal of Vacuum Science & Technology A 41 (2), 2023
162023
The effects of energy transfer on the Er3+ 1.54 μm luminescence in nanostructured Y2O3 thin films with heterogeneously distributed Yb3+ and Er3+ codopants
J Hoang, RN Schwartz, KL Wang, JP Chang
Journal of Applied Physics 112 (6), 2012
132012
Er 3 interlayer energy migration as the limiting photoluminescence quenching factor in nanostructured Er 3: Y2O3 thin films
J Hoang, RN Schwartz, KL Wang, JP Chang
Journal of Applied Physics 112, 023116, 2012
122012
Feature profile evolution during shallow trench isolation etch in chlorine-based plasmas. II. Coupling reactor and feature scale models
CC Hsu, J Hoang, V Le, JP Chang
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
122008
Progress report on high aspect ratio patterning for memory devices
M Shen, T Lill, J Hoang, H Chi, A Routzahn, J Church, P Subramonium, ...
Japanese Journal of Applied Physics 62 (SI), SI0801, 2023
112023
Conformal damage-free encapsulation of chalcogenide materials
JS Sims, AJ McKerrow, M Shen, T Lill, S Tang, KM Kelchner, J Hoang, ...
US Patent 11,239,420, 2022
82022
Feature profile evolution during shallow trench isolation etching in chlorine-based plasmas. III. The effect of oxygen addition
C Hsu, N Marchack, RM Martin, C Pham, J Hoang, JP Chang
Journal of Vacuum Science & Technology B 31 (4), 2013
72013
Method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber
M Titus, G Kamarthy, H Singh, Y Kimura, M Shen, B Zhou, Y Zhou, ...
US Patent 9,589,853, 2017
52017
Method to etch copper barrier film
M Shen, J Zhu, S Huang, B Zhou, J Hoang, P Sharma, T Lill
US Patent 9,570,320, 2017
42017
A new etch planarization technology to correct non-uniformity post chemical mechanical polishing
M Shen, B Zhou, Y Zhou, J Hoang, J Bowers, AD Bailey, E Pape, H Singh, ...
IEEE Transactions on Semiconductor Manufacturing 28 (4), 502-507, 2015
42015
Measurements of metal alkylamide density during atomic layer deposition using a mid-infrared light-emitting diode (LED) source
JE Maslar, J Hoang, WA Kimes, BA Sperling
Applied Spectroscopy 69 (3), 332-341, 2015
42015
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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