Interfacial characteristics of H Li, S Dimitrijev, HB Harrison, D Sweatman
Applied physics letters 70 (15), 2028-2030, 1997
386 1997 Effects of nitridation in gate oxides grown on 4H-SiC P Jamet, S Dimitrijev, P Tanner
Journal of Applied Physics 90 (10), 5058-5063, 2001
343 2001 Principles of semiconductor devices S Dimitrijev
(No Title), 2012
321 2012 The piezoresistive effect of SiC for MEMS sensors at high temperatures: A review HP Phan, DV Dao, K Nakamura, S Dimitrijev, NT Nguyen
Journal of Microelectromechanical systems 24 (6), 1663-1677, 2015
253 2015 Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation VV Afanas’ev, A Stesmans, F Ciobanu, G Pensl, KY Cheong, S Dimitrijev
Applied Physics Letters 82 (4), 568-570, 2003
248 2003 Understanding semiconductor devices S Dimitrijev
(No Title), 2000
206 2000 Physical properties of P Jamet, S Dimitrijev
Applied Physics Letters 79 (3), 323-325, 2001
199 2001 Band alignment and defect states at SiC/oxide interfaces VV Afanas’Ev, F Ciobanu, S Dimitrijev, G Pensl, A Stesmans
Journal of Physics: Condensed Matter 16 (17), S1839, 2004
182 2004 Advances in SiC power MOSFET technology S Dimitrijev, P Jamet
Microelectronics reliability 43 (2), 225-233, 2003
143 2003 Mechanism of Threshold Voltage Shift in X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev
IEEE Electron Device Letters 39 (8), 1145-1148, 2018
134 2018 Investigation of nitric oxide and Ar annealed H Li, S Dimitrijev, D Sweatman, HB Harrison, P Tanner, B Feil
Journal of applied Physics 86 (8), 4316-4321, 1999
133 1999 Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices S Dimitrijev, J Han, HA Moghadam, A Aminbeidokhti
Mrs Bulletin 40 (5), 399-405, 2015
113 2015 Nitridation of silicon-dioxide films grown on 6H silicon carbide S Dimitrijev, HF Li, HB Harrison, D Sweatman
IEEE Electron Device Letters 18 (5), 175-177, 1997
111 1997 High quality ultrathin dielectric films grown on silicon in a nitric oxide ambient ZQ Yao, HB Harrison, S Dimitrijev, D Sweatman, YT Yeow
Applied physics letters 64 (26), 3584-3586, 1994
110 1994 Growth of 3C–SiC on 150-mm Si (100) substrates by alternating supply epitaxy at 1000 C L Wang, S Dimitrijev, J Han, A Iacopi, L Hold, P Tanner, HB Harrison
Thin solid films 519 (19), 6443-6446, 2011
109 2011 Electrical and physical characterization of gate oxides on KY Cheong, S Dimitrijev, J Han, HB Harrison
Journal of applied physics 93 (9), 5682-5686, 2003
103 2003 Analysis of CMOS transistor instabilities S Dimitrijev, N Stojadinović
Solid-state electronics 30 (10), 991-1003, 1987
96 1987 Surface-passivation effects on the performance of 4H-SiC BJTs R Ghandi, B Buono, M Domeij, R Esteve, A Schöner, J Han, S Dimitrijev, ...
IEEE Transactions on Electron Devices 58 (1), 259-265, 2010
82 2010 Analysis of subthreshold carrier transport for ultimate DGMOSFET HK Jung, S Dimitrijev
IEEE transactions on electron devices 53 (4), 685-691, 2006
82 2006 Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation R Schörner, P Friedrichs, D Peters, D Stephani, S Dimitrijev, P Jamet
Applied physics letters 80 (22), 4253-4255, 2002
81 2002