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Kurt Gaskill
Kurt Gaskill
Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD
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Anno
Sensitive room-temperature terahertz detection via the photothermoelectric effect in graphene
X Cai, AB Sushkov, RJ Suess, MM Jadidi, GS Jenkins, LO Nyakiti, ...
Nature nanotechnology 9 (10), 814-819, 2014
6572014
Magneto‐optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance
YJ Wang, R Kaplan, HK Ng, K Doverspike, DK Gaskill, T Ikedo, I Akasaki, ...
Journal of applied physics 79 (10), 8007-8010, 1996
6051996
Epitaxial-graphene RF field-effect transistors on Si-face 6H-SiC substrates
JS Moon, D Curtis, M Hu, D Wong, C McGuire, PM Campbell, G Jernigan, ...
IEEE Electron Device Letters 30 (6), 650-652, 2009
4982009
Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition
ER Glaser, TA Kennedy, K Doverspike, LB Rowland, DK Gaskill, ...
Physical Review B 51 (19), 13326, 1995
3921995
Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy
W Qian, M Skowronski, M De Graef, K Doverspike, LB Rowland, ...
Applied physics letters 66 (10), 1252-1254, 1995
3781995
Silicon carbide as a platform for power electronics
CR Eddy Jr, DK Gaskill
Science 324 (5933), 1398-1400, 2009
3332009
Formation of high Tc superconducting films by organometallic chemical vapor deposition
AD Berry, DK Gaskill, RT Holm, EJ Cukauskas, R Kaplan, RL Henry
Applied physics letters 52 (20), 1743-1745, 1988
3081988
Technique for the dry transfer of epitaxial graphene onto arbitrary substrates
JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ...
ACS nano 4 (2), 1108-1114, 2010
2902010
Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy
W Qian, GS Rohrer, M Skowronski, K Doverspike, LB Rowland, ...
Applied physics letters 67 (16), 2284-2286, 1995
2881995
Microwave performance of GaN MESFETS
SC Binari, LB Rowland, W Kruppa, G Kelner, K Doverspike, DK Gaskill
Electronics letters 30 (15), 1248-1249, 1994
2571994
Polarity governs atomic interaction through two-dimensional materials
W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ...
Nature materials 17 (11), 999-1004, 2018
2482018
Quantum linear magnetoresistance in multilayer epitaxial graphene
AL Friedman, JL Tedesco, PM Campbell, JC Culbertson, E Aifer, ...
Nano letters 10 (10), 3962-3965, 2010
2462010
Hall effect mobility of epitaxial graphene grown on silicon carbide
JL Tedesco, BL VanMil, RL Myers-Ward, JM McCrate, SA Kitt, ...
Applied Physics Letters 95 (12), 2009
2452009
Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale
JA Robinson, M Wetherington, JL Tedesco, PM Campbell, X Weng, J Stitt, ...
Nano letters 9 (8), 2873-2876, 2009
2452009
Top-gated epitaxial graphene FETs on Si-face SiC wafers with a peak transconductance of 600 mS/mm
JS Moon, D Curtis, S Bui, M Hu, DK Gaskill, JL Tedesco, P Asbeck, ...
IEEE Electron Device Letters 31 (4), 260-262, 2010
1922010
Modulation spectroscopy as a tool for electronic material characterization
N Bottka, DK Gaskill, RS Sillmon, R Henry, R Glosser
Journal of electronic materials 17, 161-170, 1988
1871988
Comparison of epitaxial graphene on Si-face and C-face 4H SiC formed by ultrahigh vacuum and RF furnace production
GG Jernigan, BL VanMil, JL Tedesco, JG Tischler, ER Glaser, ...
Nano letters 9 (7), 2605-2609, 2009
1862009
Ultra-low resistance ohmic contacts in graphene field effect transistors
JS Moon, M Antcliffe, HC Seo, D Curtis, S Lin, A Schmitz, I Milosavljevic, ...
Applied Physics Letters 100 (20), 2012
1822012
Electrical characterisation of Ti Schottky barriers on n-type GaN
SC Binari, HB Dietrich, G Kelner, LB Rowland, K Doverspike, DK Gaskill
Electronics Letters 30 (11), 909-911, 1994
1731994
Tunable terahertz hybrid metal–graphene plasmons
MM Jadidi, AB Sushkov, RL Myers-Ward, AK Boyd, KM Daniels, ...
Nano letters 15 (10), 7099-7104, 2015
1692015
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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