| Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, T Moon, C Seong Hwang Applied Physics Letters 102 (24), 242905, 2013 | 777 | 2013 |
| Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ... Nanoscale 9 (28), 9973-9986, 2017 | 348 | 2017 |
| Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, H Kyeom Kim, ... Applied Physics Letters 102 (11), 112914, 2013 | 220 | 2013 |
| Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes MH Park, HJ Kim, YJ Kim, W Lee, T Moon, KD Kim, CS Hwang Applied Physics Letters 105 (7), 072902, 2014 | 184 | 2014 |
| Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors SW Lee, JH Han, S Han, W Lee, JH Jang, M Seo, SK Kim, C Dussarrat, ... Chemistry of Materials 23 (8), 2227-2236, 2011 | 159 | 2011 |
| Atomic layer deposition of SrTiO3 films with cyclopentadienyl-based precursors for metal–insulator–metal capacitors W Lee, JH Han, W Jeon, YW Yoo, SW Lee, SK Kim, CH Ko, ... Chemistry of Materials 25 (6), 953-961, 2013 | 87 | 2013 |
| Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode JH Han, S Han, W Lee, SW Lee, SK Kim, J Gatineau, C Dussarrat, ... Applied Physics Letters 99 (2), 022901, 2011 | 84 | 2011 |
| Structure and electrical properties of Al-doped HfO2 and ZrO2 films grown via atomic layer deposition on Mo electrodes YW Yoo, W Jeon, W Lee, CH An, SK Kim, CS Hwang ACS applied materials & interfaces 6 (24), 22474-22482, 2014 | 79 | 2014 |
| Conformal Formation of (GeTe2)(1–x)(Sb2Te3) x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories T Eom, S Choi, BJ Choi, MH Lee, T Gwon, SH Rha, W Lee, MS Kim, ... Chemistry of Materials 24 (11), 2099-2110, 2012 | 63 | 2012 |
| Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials SW Lee, BJ Choi, T Eom, JH Han, SK Kim, SJ Song, W Lee, CS Hwang Coordination Chemistry Reviews 257 (23-24), 3154-3176, 2013 | 62 | 2013 |
| Improved Initial Growth Behavior of SrO and SrTiO3 Films Grown by Atomic Layer Deposition Using {Sr (demamp)(tmhd)} 2 as Sr-Precursor W Lee, W Jeon, CH An, MJ Chung, HJ Kim, T Eom, SM George, BK Park, ... Chemistry of Materials 27 (11), 3881-3891, 2015 | 45 | 2015 |
| Cs2SnI6-Encapsulated Multidye-Sensitized All-Solid-State Solar Cells B Lee, Y Ezhumalai, W Lee, MC Chen, CY Yeh, TJ Marks, RPH Chang ACS applied materials & interfaces 11 (24), 21424-21434, 2019 | 44 | 2019 |
| Electrical properties of TiO 2-based MIM capacitors deposited by TiCl 4 and TTIP based atomic layer deposition processes B Hudec, K Hušeková, A Tarre, JH Han, S Han, A Rosová, W Lee, ... Microelectronic Engineering 88 (7), 1514-1516, 2011 | 43 | 2011 |
| High-Resolution Colloidal Quantum Dot Film Photolithography via Atomic Layer Deposition of ZnO GH Kim, J Lee, JY Lee, J Han, Y Choi, CJ Kang, KB Kim, W Lee, J Lim, ... ACS Applied Materials & Interfaces 13 (36), 43075-43084, 2021 | 41 | 2021 |
| Growth of conductive SrRuO3 films by combining atomic layer deposited SrO and chemical vapor deposited RuO2 layers JH Han, W Lee, W Jeon, SW Lee, CS Hwang, C Ko, J Gatineau Chemistry of Materials 24 (24), 4686-4692, 2012 | 39 | 2012 |
| The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application M Seo, S Ho Rha, S Keun Kim, J Hwan Han, W Lee, S Han, ... Journal of Applied Physics 110 (2), 024105, 2011 | 37 | 2011 |
| Evaluating the Top Electrode Material for Achieving an Equivalent Oxide Thickness Smaller than 0.4 nm from an Al-doped TiO2 Film W Jeon, S Yoo, HK Kim, W Lee, CH An, MJ Chung, CJ Cho, SK Kim, ... ACS applied materials & interfaces 6 (23), 21632-21637, 2014 | 35 | 2014 |
| Role of Interfacial Reaction in Atomic Layer Deposition of TiO2 Thin Films Using Ti (O-i Pr) 2 (tmhd) 2 on Ru or RuO2 Substrates SW Lee, JH Han, SK Kim, S Han, W Lee, CS Hwang Chemistry of Materials 23 (4), 976-983, 2011 | 35 | 2011 |
| Controlling the Electrical Characteristics of ZrO2/Al2O3/ZrO2 Capacitors by Adopting a Ru Top Electrode Grown via Atomic Layer Deposition CH An, W Lee, SH Kim, CJ Cho, DG Kim, DS Kwon, ST Cho, SH Cha, ... physica status solidi (RRL)–Rapid Research Letters 13 (3), 1800454, 2019 | 33 | 2019 |
| Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films W Jeon, SH Rha, W Lee, YW Yoo, CH An, KH Jung, SK Kim, CS Hwang ACS applied materials & interfaces 6 (10), 7910-7917, 2014 | 32 | 2014 |
Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National UniversityEmail verificata su snu.ac.kr