Non-polar and semi-polar GaN substrates, devices, and methods for making them AD Hanser, EA Preble, L Liu, TL Clites, KR Evans
US Patent 7,727,874, 2010
326 2010 Method for making group III nitride articles AD Hanser, L Liu, EA Preble, D Tsvetkov, NM Williams, X Xu
US Patent 8,435,879, 2013
273 2013 Structural TEM study of nonpolar DN Zakharov, Z Liliental-Weber, B Wagner, ZJ Reitmeier, EA Preble, ...
Physical Review B—Condensed Matter and Materials Physics 71 (23), 235334, 2005
272 2005 Accurate dependence of gallium nitride thermal conductivity on dislocation density C Mion, JF Muth, EA Preble, D Hanser
Applied Physics Letters 89 (9), 2006
254 2006 Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement EA Preble, L Liu, AD Hanser, NM Williams, X Xu
US Patent 7,897,490, 2011
251 2011 Universal phonon mean free path spectra in crystalline semiconductors at high temperature JP Freedman, JH Leach, EA Preble, Z Sitar, RF Davis, JA Malen
Scientific reports 3 (1), 2963, 2013
188 2013 GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition JB Limb, D Yoo, JH Ryou, W Lee, SC Shen, RD Dupuis, ML Reed, ...
Applied physics letters 89 (1), 2006
140 2006 Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier Y Zhou, D Wang, C Ahyi, CC Tin, J Williams, M Park, NM Williams, ...
Journal of applied physics 101 (2), 2007
111 2007 High-temperature electromechanical characterization of AlN single crystals T Kim, J Kim, R Dalmau, R Schlesser, E Preble, X Jiang
IEEE transactions on Ultrasonics, Ferroelectrics, and Frequency control 62 …, 2015
107 2015 Green light emitting diodes on a-plane GaN bulk substrates T Detchprohm, M Zhu, Y Li, Y Xia, C Wetzel, EA Preble, L Liu, T Paskova, ...
Applied Physics Letters 92 (24), 2008
100 2008 High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire T Paskova, R Kroeger, S Figge, D Hommel, V Darakchieva, B Monemar, ...
Applied Physics Letters 89 (5), 2006
99 2006 Surface preparation of substrates from bulk GaN crystals D Hanser, M Tutor, E Preble, M Williams, X Xu, D Tsvetkov, L Liu
Journal of Crystal Growth 305 (2), 372-376, 2007
93 2007 Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization RF Davis, T Gehrke, KJ Linthicum, TS Zheleva, EA Preble, P Rajagopal, ...
Journal of crystal growth 225 (2-4), 134-140, 2001
88 2001 Gallium nitride and related materials: challenges in materials processing RF Davis, S Einfeldt, EA Preble, AM Roskowski, ZJ Reitmeier, PQ Miraglia
Acta Materialia 51 (19), 5961-5979, 2003
86 2003 Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate Y Zhou, C Ahyi, T Isaacs-Smith, M Bozack, CC Tin, J Williams, M Park, ...
Solid-State Electronics 52 (5), 756-764, 2008
85 2008 Light-emitting diode development on polar and non-polar GaN substrates C Wetzel, M Zhu, J Senawiratne, T Detchprohm, PD Persans, L Liu, ...
Journal of Crystal Growth 310 (17), 3987-3991, 2008
83 2008 Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates T Detchprohm, M Zhu, Y Li, L Zhao, S You, C Wetzel, EA Preble, ...
Applied Physics Letters 96 (5), 2010
80 2010 Gallium nitride materials-progress, status, and potential roadblocks RF Davis, AM Roskowski, EA Preble, JS Speck, B Heying, JA Freitas, ...
Proceedings of the IEEE 90 (6), 993-1005, 2002
71 2002 Thermal conductivity, dislocation density and GaN device design C Mion, JF Muth, EA Preble, D Hanser
Superlattices and Microstructures 40 (4-6), 338-342, 2006
70 2006 High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ...
IEEE electron device letters 34 (2), 199-201, 2013
68 2013