N-type Schottky barrier source/drain MOSFET using ytterbium silicide S Zhu, J Chen, MF Li, SJ Lee, J Singh, CX Zhu, A Du, CH Tung, A Chin, ...
IEEE Electron Device Letters 25 (8), 565-567, 2004
492 2004 A flexible organic pentacene nonvolatile memory based on high-κ dielectric layers MF Chang, PT Lee, SP McAlister, A Chin
Applied Physics Letters 93 (23), 2008
351 2008 Electrical characteristics of high quality La2 O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/ YH Wu, MY Yang, A Chin, WJ Chen, CM Kwei
IEEE Electron Device Letters 21 (7), 341-343, 2000
273 2000 High-density MIM capacitors using Al2 O3 and AlTiOx dielectrics SB Chen, CH Lai, A Chin, JC Hsieh, J Liu
IEEE Electron Device Letters 23 (4), 185-187, 2002
212 2002 High quality La/sub 2/O/sub 3/and Al/sub 2/O/sub 3/gate dielectrics with equivalent oxide thickness 5-10/spl Aring A Chin, YH Wu, SB Chen, CC Liao, WJ Chen
2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2000
208 2000 Effect of surface N Wu, Q Zhang, C Zhu, CC Yeo, SJ Whang, DSH Chan, MF Li, BJ Cho, ...
Applied physics letters 84 (19), 3741-3743, 2004
182 2004 A high-density MIM capacitor (13 fF/μm2 ) using ALD HfO2 dielectrics X Yu, C Zhu, H Hu, A Chin, MF Li, BJ Cho, DL Kwong, PD Foo, MB Yu
IEEE Electron Device Letters 24 (2), 63-65, 2003
174 2003 Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric N Wu, Q Zhang, C Zhu, DSH Chan, MF Li, N Balasubramanian, A Chin, ...
Applied Physics Letters 85 (18), 4127-4129, 2004
164 2004 Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance CH Cheng, FS Yeh, A Chin
Advanced Materials 23 (7), 902-+, 2011
155 2011 Low-leakage-current DRAM-like memory using a one-transistor ferroelectric MOSFET with a Hf-based gate dielectric CH Cheng, A Chin
IEEE electron device letters 35 (1), 138-140, 2013
150 2013 A TaN-HfO/sub 2/-Ge pMOSFET with NovelSiH/sub 4/surface passivation N Wu, Q Zhang, C Zhu, DSH Chan, A Du, N Balasubramanian, MF Li, ...
IEEE electron device letters 25 (9), 631-633, 2004
150 2004 Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High- CH Cheng, A Chin
IEEE Electron Device Letters 35 (2), 274-276, 2014
136 2014 Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/gate dielectric and metal gate S Zhu, R Li, SJ Lee, MF Li, A Du, J Singh, C Zhu, A Chin, DL Kwong
IEEE Electron device letters 26 (2), 81-83, 2005
126 2005 Device and reliability of high-k Al/sub 2/O/sub 3/gate dielectric with good mobility and low D/sub it A Chin, CC Liao, CH Lu, WJ Chen, C Tsai
1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 1999
124 1999 Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode S Zhu, HY Yu, SJ Whang, JH Chen, C Shen, C Zhu, SJ Lee, MF Li, ...
IEEE Electron Device Letters 25 (5), 268-270, 2004
123 2004 Quantum interference effects and spin-orbit interaction in quasi-one-dimensional wires and rings C Kurdak, AM Chang, A Chin, TY Chang
Physical Review B 46 (11), 6846, 1992
123 1992 Integrated antennas on Si, proton-implanted Si and Si-on-quartz KT Chan, A Chin, YB Chen, YD Lin, TS Duh, WJ Lin
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
117 2001 High-Performance KC Chiang, CC Huang, GL Chen, WJ Chen, HL Kao, YH Wu, A Chin, ...
IEEE transactions on electron devices 53 (9), 2312-2319, 2006
112 2006 Multilayer reflectors by molecular‐beam epitaxy for resonance enhanced absorption in thin high‐speed detectors A Chin, TY Chang
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1990
109 1990 Improvement of voltage linearity in high-/spl kappa/ MIM capacitors using HfO2 -SiO2 stacked dielectric SJ Kim, BJ Cho, MF Li, SJ Ding, C Zhu, MB Yu, B Narayanan, A Chin, ...
IEEE Electron Device Letters 25 (8), 538-540, 2004
108 2004