Gwan-Hyoung Lee

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James C. HoneDepartment of Mechanical Engineering, Columbia UniversityEmail verificata su columbia.edu
Chul-Ho LeeAssociate Professor, Seoul National University & Korea University (2014~2022)Email verificata su snu.ac.kr
Philip KimHarvard UniversityEmail verificata su g.harvard.edu
Kenji WatanabeNational Institute for Materials ScienceEmail verificata su nims.go.jp
Arend M. van der ZandeProfessor of Materials Science and Engineering, University of Illinois at Urbana-ChampaignEmail verificata su illinois.edu
Changgu LeeSungkyunkwan UniversityEmail verificata su skku.edu
Young-Jun YuAssociate Professor, Department of Physics, Chungnam National UniversityEmail verificata su cnu.ac.kr
Pinshane Y. HuangAssociate Professor of Materials Science, University of IllinoisEmail verificata su illinois.edu
Jong Hun KimInha UniversityEmail verificata su inha.ac.kr
Tony F HeinzDepts. of Applied Physics, Photon Science, and, by courtesy, of Electrical Eng., SLAC, StanfordEmail verificata su stanford.edu
Junyoung KwonSamsung Advanced Institute of TechnologyEmail verificata su samsung.com
T.TaniguchiNational Institute for Materials ScienceEmail verificata su nims.go.jp
Colin NuckollsSheldon and Dorothea Buckler Professor of Material Science, Columbia UniversityEmail verificata su columbia.edu
Young Duck KimAssociate Professor, Department of Physics, Kyung Hee University, Seoul 02447, Republic of KoreaEmail verificata su khu.ac.kr
Sunwoo LeeAssistant Professor, Nanyang Technological UniversityEmail verificata su ntu.edu.sg
Annie Xian ZhangMechanical Engineering, Stevens Institute of TechnologyEmail verificata su stevens.edu
David A MullerProfessor of Applied and Engineering Physics, Cornell UniversityEmail verificata su cornell.edu
Andrea CapassoTenured Staff Researcher, International Iberian Nanotechnology Laboratory - andrea.capasso@inl.intEmail verificata su inl.int
Tony LowU of Minnesota, IBM Research, Columbia U, Purdue U, National U SingaporeEmail verificata su us.ibm.com
Lei WangColumbia UniversityEmail verificata su columbia.edu

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Gwan-Hyoung Lee

Professor, Materials Science and Engineering, Seoul National University

Email verificata su snu.ac.kr - Home page

two-dimensional materials


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Tightly bound trions in monolayer MoS2 KF Mak, K He, C Lee, GH Lee, J Hone, TF Heinz, J Shan Nature materials 12 (3), 207-211, 2012	3167	2012
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide AM van der Zande, PY Huang, DA Chenet, TC Berkelbach, YM You, ... Nature materials 12, 554–561, 2013	2409	2013
Atomically thin pn junctions with van der Waals heterointerfaces CH Lee, GH Lee, AM van der Zande, W Chen, Y Li, M Han, X Cui, G Arefe, ... Nature Nanotechnology 9, 676-681, 2014	2371	2014
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform X Cui, GH Lee, YD Kim, G Arefe, PY Huang, CH Lee, DA Chenet, X Zhang, ... Nature Nanotechnology, 2015	1417	2015
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures GH Lee, YJ Yu, X Cui, N Petrone, CH Lee, MS Choi, DY Lee, C Lee, ... ACS nano 7 (9), 7931-7936, 2013	1273	2013
High-Strength Chemical-Vapor–Deposited Graphene and Grain Boundaries GH Lee, RC Cooper, SJ An, S Lee, A van der Zande, N Petrone, ... Science 340 (6136), 1073-1076, 2013	1013	2013
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices MS Choi, GH Lee, YJ Yu, DY Lee, SH Lee, P Kim, J Hone, WJ Yoo Nature communications 4, 1624, 2013	790	2013
Effect of defects on the intrinsic strength and stiffness of graphene A Zandiatashbar, GH Lee, SJ An, S Lee, N Mathew, M Terrones, ... Nature communications 5, 3186, 2014	751	2014
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride GH Lee, YJ Yu, C Lee, C Dean, KL Shepard, P Kim, J Hone Applied Physics Letters 99 (24), 243114, 2011	590	2011
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage GH Lee, X Cui, YD Kim, G Arefe, X Zhang, CH Lee, F Ye, K Watanabe, ... ACS nano 9 (7), 7019-7026, 2015	466	2015
Measurement of Lateral and Interfacial Thermal Conductivity of Single-and Bilayer MoS2 and MoSe2 Using Refined Optothermal Raman Technique X Zhang, D Sun, Y Li, GH Lee, X Cui, D Chenet, Y You, TF Heinz, ... ACS Applied Materials & Interfaces 7 (46), 25923-25929, 2015	386	2015
Graphene mechanical oscillators with tunable frequency C Chen, S Lee, VV Deshpande, GH Lee, M Lekas, K Shepard, J Hone Nature nanotechnology 8 (12), 923-927, 2013	341	2013
Graphene based heterostructures C Dean, AF Young, L Wang, I Meric, GH Lee, K Watanabe, T Taniguchi, ... Solid State Communications 152 (15), 1275-1282, 2012	300	2012
2D semiconducting materials for electronic and optoelectronic applications: potential and challenge S Kang, D Lee, J Kim, A Capasso, HS Kang, JW Park, CH Lee, GH Lee 2D Materials 7 (2), 022003, 2020	243	2020
Effect of surface morphology on friction of graphene on various substrates DH Cho, L Wang, JS Kim, GH Lee, ES Kim, S Lee, SY Lee, J Hone, C Lee Nanoscale 5 (7), 3063-3069, 2013	193	2013
Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS₂ Heterostructure Devices S Rathi, I Lee, D Lim, J Wang, Y Ochiai, N Aoki, K Watanabe, T Taniguchi, ... Nano letters 15 (8), 5017-5024, 2015	179	2015
Mechanical properties of two-dimensional materials and their applications JH Kim, JH Jeong, N Kim, R Joshi, GH Lee Journal of Physics D: Applied Physics 52 (8), 083001, 2018	172	2018
Thickness-dependent Schottky barrier height of MoS2 field-effect transistors J Kwon, JY Lee, YJ Yu, CH Lee, X Cui, J Hone, GH Lee Nanoscale 9 (18), 6151-6157, 2017	162	2017
Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures JY Lee, JH Shin, GH Lee, CH Lee Nanomaterials 6 (11), 193, 2016	162	2016
Inking elastomeric stamps with micro‐patterned, single layer graphene to create high‐performance OFETs SJ Kang, B Kim, KS Kim, Y Zhao, Z Chen, GH Lee, J Hone, P Kim, ... Advanced Materials 23 (31), 3531, 2011	145	2011

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