| Controlled Doping of Large‐Area Trilayer MoS2 with Molecular Reductants and Oxidants A Tarasov, S Zhang, MY Tsai, PM Campbell, S Graham, S Barlow, ... Advanced Materials 27 (7), 1175-1181, 2015 | 231 | 2015 |
| Flexible MoS2 field-effect transistors for gate-tunable piezoresistive strain sensors MY Tsai, A Tarasov, ZR Hesabi, H Taghinejad, PM Campbell, CA Joiner, ... ACS applied materials & interfaces 7 (23), 12850-12855, 2015 | 170 | 2015 |
| Highly Uniform Trilayer Molybdenum Disulfide for Wafer‐Scale Device Fabrication A Tarasov, PM Campbell, MY Tsai, ZR Hesabi, J Feirer, S Graham, ... Advanced Functional Materials 24 (40), 6389-6400, 2014 | 133 | 2014 |
| Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe 2 PM Campbell, A Tarasov, CA Joiner, MY Tsai, G Pavlidis, S Graham, ... Nanoscale 8 (4), 2268-2276, 2016 | 73 | 2016 |
| Enhanced Resonant Tunneling in Symmetric 2D Semiconductor Vertical Heterostructure Transistors PM Campbell, A Tarasov, CA Joiner, WJ Ready, EM Vogel ACS nano 9 (5), 5000-5008, 2015 | 72 | 2015 |
| In situ thermal oxidation kinetics in few layer MoS2 R Rao, AE Islam, PM Campbell, EM Vogel, B Maruyama 2D Materials 4 (2), 025058, 2017 | 63 | 2017 |
| Resonant Light-Induced Heating in Hybrid Cavity-Coupled 2D Transition-Metal Dichalcogenides H Taghinejad, M Taghinejad, A Tarasov, MY Tsai, AH Hosseinnia, ... ACS Photonics 3 (4), 700-707, 2016 | 33 | 2016 |
| Solution-Processed Doping of Trilayer WSe2 with Redox-Active Molecules MY Tsai, S Zhang, PM Campbell, RR Dasari, X Ba, A Tarasov, S Graham, ... Chemistry of Materials 29 (17), 7296-7304, 2017 | 31 | 2017 |
| Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures PM Campbell, A Tarasov, CA Joiner, WJ Ready, EM Vogel Journal of Applied Physics 119 (2), 024503, 2016 | 27 | 2016 |
| Graphene-Molybdenum Disulfide-Graphene Tunneling Junctions with Large-Area Synthesized Materials CA Joiner, PM Campbell, AA Tarasov, BR Beatty, CJ Perini, MY Tsai, ... ACS Applied Materials & Interfaces 8 (13), 8702-8709, 2016 | 23 | 2016 |
| Gold Nanoparticles on Oxide-Free Silicon–Molecule Interface for Single Electron Transport L Caillard, O Seitz, PM Campbell, RP Doherty, AF Lamic-Humblot, ... Langmuir 29 (16), 5066-5073, 2013 | 23 | 2013 |
| Material Constraints and Scaling of 2-D Vertical Heterostructure Interlayer Tunnel Field-Effect Transistors PM Campbell, JK Smith, WJ Ready, EM Vogel IEEE Transactions on Electron Devices 64 (6), 2714-2720, 2017 | 15 | 2017 |
| Controlling the reproducibility of Coulomb blockade phenomena for gold nanoparticles on an organic monolayer/silicon system L Caillard, S Sattayaporn, AF Lamic-Humblot, S Casale, P Campbell, ... Nanotechnology 26 (6), 065301, 2015 | 11 | 2015 |
| Comparative time-resolved study of the XeF2 etching of Mo and Si JF Veyan, D Aureau, Y Gogte, P Campbell, XM Yan, YJ Chabal Journal of Applied Physics 108 (11), 114913, 2010 | 9 | 2010 |
| Atomically-precise three-dimensional top down fabrication JB Ballard, JHG Owen, E Fuchs, S McDonnell, D Dick, G Mordi, A Azcatl, ... Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS …, 2013 | 3 | 2013 |
| Synthesis of Large-Area Two-Dimensional Materials for Vertical Heterostructures PM Campbell Georgia Institute of Technology, 2017 | 2 | 2017 |
| Piezoresistive strain sensing with flexible MoS2 field-effect transistors A Tarasov, MY Tsai, H Taghinejad, PM Campbell, A Adibi, EM Vogel Device Research Conference (DRC), 2015 73rd Annual, 159-160, 2015 | 1 | 2015 |
| In Situ Thermal Oxidation Kinetics in Few Layer MoS2 (Postprint) R Rao, AE Islam, B Maruyama, PM Campbell, EM Vogel UES, Inc. Beavercreek United States, 2017 | | 2017 |
| A path toward single electron devices: Chemical functionalization of Si (111) to achieve single electron transport through double tunnel junctions PM Campbell The University of Texas at Dallas, 2013 | | 2013 |
