Luke F. Lester

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Kevin J MalloyProfessor Emeritus, University of New MexicoEmail verificata su unm.edu
Vassilios KovanisBradley Department of Electrical and Computer EngineeringEmail verificata su vt.edu
Michael PochetAir Force Research LaboratoryEmail verificata su us.af.mil
D.L. Huffaker, Diana Huffaker, Diana L...Associate Vice President for Res, UT Arlington and Adjunct Professor of Electrical Engineering, UCLAEmail verificata su uta.edu
George T. WangSandia National LaboratoriesEmail verificata su sandia.gov
Ting Shan LukSandia National LaboratoriesEmail verificata su sandia.gov
Antonio HurtadoUniversity of StrathclydeEmail verificata su strath.ac.uk
Igal BrenerSenior Scientist, Sandia National LabsEmail verificata su sandia.gov
Chang-Yi LinUniversity of New MexicoEmail verificata su intel.com
Jeremy B. WrightPrincipal Member of Technical Staff, Sandia National LaboratoriesEmail verificata su sandia.gov
Ganesh BalakrishnanProfessor, ECE UNM, Director NM EPSCoREmail verificata su unm.edu
Stephen D HerseeEmeritus Professor of Electrical Engineering, University of New Mexico Email verificata su chtm.unm.edu
Jesse MeeElectrical Engineer - Air Force Research LaboratoriesEmail verificata su kirtland.af.mil
M J Adamsessex OR southampton OR cardiff OR martleshamEmail verificata su essex.ac.uk
L. Ralph DawsonResearch Professor of ECE, University of New MexicoEmail verificata su chtm.unm.edu
David MurrellPhotonics Engineer, Lockheed MartinEmail verificata su lmco.com
Christos ChristodoulouUniversity of New MexicoEmail verificata su unm.edu
Nassim RahimiPhD Candidate and Research Assistant at University of New MexicoEmail verificata su unm.edu
Dr. R. B. LaghumavarapuStaff Research Associate-III, University of California Los AngelesEmail verificata su ucla.edu
Stefan PrebleRochester Institute of TechnologyEmail verificata su rit.edu

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Luke F. Lester

Roanoke Electric Steel Professor Emeritus

Email verificata su vt.edu

quantum dot lasers quantum photonics semiconductor lasers


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Extremely low room-temperature threshold current density diode lasers using InAs dots in In0. 15Ga0. 85As quantum well GT Liu, A Stintz, H Li, KJ Malloy, LF Lester Electronics Letters 35 (14), 1163-1165, 1999	652	1999
Gain and linewidth enhancement factor in InAs quantum-dot laser diodes TC Newell, DJ Bossert, A Stintz, B Fuchs, KJ Malloy, LF Lester IEEE Photonics Technology Letters 11 (12), 1527-1529, 1999	384	1999
Optical characteristics of 1.24-μm InAs quantum-dot laser diodes LF Lester, A Stintz, H Li, TC Newell, EA Pease, BA Fuchs, KJ Malloy IEEE Photonics Technology Letters 11 (8), 931-933, 1999	286	1999
Room-temperature operation of InAs quantum-dash lasers on InP [001] RH Wang, A Stintz, PM Varangis, TC Newell, H Li, KJ Malloy, LF Lester IEEE Photonics Technology Letters 13 (8), 767-769, 2001	279	2001
GaSb∕ GaAs type II quantum dot solar cells for enhanced infrared spectral response RB Laghumavarapu, A Moscho, A Khoshakhlagh, M El-Emawy, LF Lester, ... Applied Physics Letters 90 (17), 2007	252	2007
Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes PG Eliseev, H Li, A Stintz, GT Liu, TC Newell, KJ Malloy, LF Lester Applied Physics Letters 77 (2), 262-264, 2000	242	2000
Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers X Huang, A Stintz, H Li, LF Lester, J Cheng, KJ Malloy Applied Physics Letters 78 (19), 2825-2827, 2001	228	2001
Improved device performance of InAs∕ GaAs quantum dot solar cells with GaP strain compensation layers RB Laghumavarapu, M El-Emawy, N Nuntawong, A Moscho, LF Lester, ... Applied Physics Letters 91 (24), 2007	215	2007
The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures GT Liu, A Stintz, H Li, TC Newell, AL Gray, PM Varangis, KJ Malloy, ... IEEE Journal of Quantum Electronics 36 (11), 1272-1279, 2000	204	2000
Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure A Stintz, GT Liu, H Li, LF Lester, KJ Malloy IEEE Photonics Technology Letters 12 (6), 591-593, 2000	196	2000
Single-mode GaN nanowire lasers Q Li, JB Wright, WW Chow, TS Luk, I Brener, LF Lester, GT Wang Optics express 20 (16), 17873-17879, 2012	184	2012
Low-threshold quantum dot lasers with 201nm tuning range PM Varangis, H Li, GT Liu, TC Newell, A Stintz, B Fuchs, KJ Malloy, ... Electronics Letters 36 (18), 1, 2000	184	2000
Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers PG Eliseev, H Li, T Liu, TC Newell, LF Lester, KJ Malloy IEEE Journal of Selected Topics in Quantum Electronics 7 (2), 135-142, 2001	144	2001
Nonalloyed Ti/Al ohmic contacts to n‐type GaN using high‐temperature premetallization anneal LF Lester, JM Brown, JC Ramer, L Zhang, SD Hersee, JC Zolper Applied physics letters 69 (18), 2737-2739, 1996	140	1996
Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor T Henderson, MI Aksun, CK Peng, H Morkoc, PC Chao, PM Smith, ... IEEE electron device letters 7 (12), 649-651, 1986	129	1986
Dynamic properties of quantum dot distributed feedback lasers: high speed, linewidth and chirp H Su, LF Lester Journal of Physics D: Applied Physics 38 (13), 2112, 2005	128	2005
High-performance InAs quantum-dot lasers near 1.3 μm Y Qiu, P Gogna, S Forouhar, A Stintz, LF Lester Applied Physics Letters 79 (22), 3570-3572, 2001	124	2001
Gain Compression and Above-Threshold Linewidth Enhancement Factor in 1.3-InAs–GaAs Quantum-Dot Lasers F Grillot, B Dagens, JG Provost, H Su, LF Lester IEEE Journal of Quantum Electronics 44 (10), 946-951, 2008	122	2008
Ultra-low-noise cryogenic high-electron-mobility transistors KHG Duh, MW Pospieszalski, WF Kopp, P Ho, AA Jabra, PC Chao, ... IEEE transactions on electron devices 35 (3), 249-256, 1988	105	1988
QD Lasers US Patent 20,020,114,367, 0	100*

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