| SiC and GaN bipolar power devices TP Chow, V Khemka, J Fedison, N Ramungul, K Matocha, Y Tang, ... Solid-State Electronics 44 (2), 277-301, 2000 | 180 | 2000 |
| Design considerations and experimental analysis for silicon carbide power rectifiers V Khemka, R Patel, TP Chow, RJ Gutmann Solid-State Electronics 43 (10), 1945-1962, 1999 | 91 | 1999 |
| A double RESURF LDMOS with drain profile engineering for improved ESD robustness V Parthasarathy, V Khemka, R Zhu, J Whitfield, A Bose, R Ida IEEE Electron Device Letters 23 (4), 212-214, 2002 | 80 | 2002 |
| A 0.25/spl mu/m CMOS based 70V smart power technology with deep trench for high-voltage isolation V Parthasarathy, R Zhu, V Khemka, T Roggenbauer, A Bose, P Hui, ... Digest. International Electron Devices Meeting,, 459-462, 2002 | 66 | 2002 |
| A fully planarized 4H-SiC trench MOS barrier Schottky (TMBS) rectifier V Khemka, V Ananthan, TP Chow IEEE Electron Device Letters 21 (6), 286-288, 2000 | 64 | 2000 |
| Characterization of phosphorus implantation in 4H-SiC V Khemka, R Patel, N Ramungul, TP Chow, M Ghezzo, J Kretchmer Journal of electronic materials 28, 167-174, 1999 | 63 | 1999 |
| Floating resurf LDMOSFET and method of manufacturing same V Khemka, V Parthasarathy, R Zhu, A Bose US Patent 6,882,023, 2005 | 62 | 2005 |
| Phosphorus-Implanted High-Voltage N. sup.+ P 4H-SiC Junction Rectifiers R Patel, V Khemka, N Ramungul, TP Chow, M Ghezzo, J Kretchmer Proceedings of 1998 International Symposium on Poer Semiconductor Devices …, 0 | 56* | |
| Structure and method for RESURF LDMOSFET with a current diverter VK Khemka, A Bose, TC Roggenbauer, R Zhu US Patent 7,439,584, 2008 | 52 | 2008 |
| Detection and optimization of temperature distribution across large-area power MOSFETs to improve energy capability V Khemka, V Parthasarathy, R Zhu, A Bose, T Roggenbauer IEEE Transactions on Electron Devices 51 (6), 1025-1032, 2004 | 51 | 2004 |
| Effect of reactive ion etch-induced damage on the performance of 4H-SiC Schottky barrier diodes V Khemka, TP Chow, RJ Gutmann Journal of electronic materials 27, 1128-1135, 1998 | 45 | 1998 |
| SOA improvement by a double RESURF LDMOS technique in a power IC technology V Parthasarathy, V Khemka, R Zhu, A Bose International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 44 | 2000 |
| Semiconductor devices employing poly-filled trenches R Zhu, VK Khemka, A Bose US Patent 7,791,161, 2010 | 43 | 2010 |
| Semiconductor device with increased snapback voltage BH Grote, VK Khemka, TA Khan, W Huang, R Zhu US Patent 8,193,585, 2012 | 42 | 2012 |
| Schottky device V Parthasarathy, VK Khemka, R Zhu, A Bose US Patent 7,071,518, 2006 | 40 | 2006 |
| Implementation of high-side, high-voltage RESURF LDMOS in a sub-half micron smart power technology R Zhu, V Parthasarathy, V Khemka, A Bose, T Roggenbauer Proceedings of the 13th International Symposium on Power Semiconductor …, 2001 | 39 | 2001 |
| Structure and method for RESURF diodes with a current diverter VK Khemka, R Zhu, A Bose US Patent 7,466,006, 2008 | 38 | 2008 |
| Electronic device including a conductive structure extending through a buried insulating layer TC Roggenbauer, VK Khemka, R Zhu, A Bose, P Hui, X Huang US Patent 8,188,543, 2012 | 35 | 2012 |
| A Floating Resurf (Fresurf) LD-MOSFET Device Concept V Khemka, V Parthasarathy, R Zhu, A Bose IEEE Electron Device Letters 24 (10), 664-666, 2003 | 35 | 2003 |
| Semiconductor device and method of forming the same R Zhu, A Bose, VK Khemka, V Parthasarathy US Patent 7,095,092, 2006 | 34 | 2006 |
