Engineering the spatial confinement of exciton polaritons in semiconductors RI Kaitouni, O El Daïf, A Baas, M Richard, T Paraiso, P Lugan, T Guillet, ...
Physical Review B—Condensed Matter and Materials Physics 74 (15), 155311, 2006
208 2006 Probing carrier dynamics in nanostructures by picosecond cathodoluminescence M Merano, S Sonderegger, A Crottini, S Collin, P Renucci, E Pelucchi, ...
Nature 438 (7067), 479-482, 2005
201 2005 High spatial resolution picosecond cathodoluminescence of InGaN quantum wells S Sonderegger, E Feltin, M Merano, A Crottini, JF Carlin, R Sachot, ...
Applied Physics Letters 89 (23), 2006
108 2006 Charged exciton dynamics in GaAs quantum wells G Finkelstein, V Umansky, I Bar-Joseph, V Ciulin, S Haacke, JD Ganiere, ...
Physical Review B 58 (19), 12637, 1998
104 1998 Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy P Corfdir, P Lefebvre, J Levrat, A Dussaigne, JD Ganière, D Martin, ...
Journal of Applied Physics 105 (4), 2009
95 2009 Role of point defects in the silicon diffusion in GaAs and Al0.3 Ga0.7 As and in the related superlattice disordering L Pavesi, NH Ky, JD Ganiere, FK Reinhart, N Baba‐Ali, I Harrison, B Tuck, ...
Journal of applied physics 71 (5), 2225-2237, 1992
92 1992 On the size dependence of the optical absorption due to small metal particles JD Ganière, R Rechsteiner, MA Smithard
Solid State Communications 16 (1), 113-115, 1975
86 1975 Radiative behavior of negatively charged excitons in CdTe-based quantum wells: A spectral and temporal analysis V Ciulin, P Kossacki, S Haacke, JD Ganiere, B Deveaud, A Esser, ...
Physical Review B 62 (24), R16310, 2000
85 2000 Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates P Corfdir, P Lefebvre, J Ristić, P Valvin, E Calleja, A Trampert, JD Ganière, ...
Journal of Applied Physics 105 (1), 2009
81 2009 Fluorescence yield and lifetime of isolated polydiacetylene chains: Evidence for a one-dimensional exciton band in a conjugated polymer R Lécuiller, J Berréhar, JD Ganiere, C Lapersonne-Meyer, P Lavallard, ...
Physical Review B 66 (12), 125205, 2002
80 2002 Exciton drift in semiconductors under uniform strain gradients: Application to bent ZnO microwires X Fu, G Jacopin, M Shahmohammadi, R Liu, M Benameur, JD Ganiere, ...
ACS nano 8 (4), 3412-3420, 2014
79 2014 A model for the Zn diffusion in GaAs by a photoluminescence study NH Ky, L Pavesi, D Araujo, JD Ganiere, FK Reinhart
Journal of applied physics 69 (11), 7585-7593, 1991
75 1991 Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN P Corfdir, J Ristić, P Lefebvre, T Zhu, D Martin, A Dussaigne, JD Ganière, ...
Applied Physics Letters 94 (20), 2009
64 2009 Quantitative analysis of electron‐beam‐induced current profiles across p –n junctions in GaAs/Al0.4 Ga0.6 As heterostructures JM Bonard, JD Ganière
Journal of Applied Physics 79 (9), 6987-6994, 1996
64 1996 Ordered magnetic phase in Cd1− xMnxTe/Cd1− y− zMgyZnzTe: N heterostructures: magnetooptical studies P Kossacki, D Ferrand, A Arnoult, J Cibert, S Tatarenko, A Wasiela, ...
Physica E: Low-dimensional Systems and Nanostructures 6 (1-4), 709-712, 2000
63 2000 High-temperature Mott transition in wide-band-gap semiconductor quantum wells G Rossbach, J Levrat, G Jacopin, M Shahmohammadi, JF Carlin, ...
Physical Review B 90 (20), 201308, 2014
62 2014 Characterization of GaAs/(GaAs)n m J Faist, JD Ganiere, P Buffat, S Sampson, FK Reinhart
Journal of applied physics 66 (3), 1023-1032, 1989
62 1989 Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around A Markus, A Fiore, JD Ganiere, U Oesterle, JX Chen, B Deveaud, ...
Applied physics letters 80 (6), 911-913, 2002
58 2002 Epitaxial growth of Si1−x −y Gex y J Mi, P Warren, M Gailhanou, JD Ganière, M Dutoit, PH Jouneau, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
52 1996 Transverse and longitudinal space-charge-induced broadenings of ultrafast electron packets S Collin, M Merano, M Gatri, S Sonderegger, P Renucci, JD Ganière, ...
Journal of applied physics 98 (9), 2005
51 2005 
Benoit DeveaudVice Provost Research Ecole Polytechnique PalaiseauEmail verificata su polytechnique.edu