| Large-scale two-dimensional MoS 2 photodetectors by magnetron sputtering ZP Ling, R Yang, JW Chai, SJ Wang, WS Leong, Y Tong, D Lei, Q Zhou, ... Optics Express 23 (10), 13580-13586, 2015 | 119 | 2015 |
| Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth Y Dong, W Wang, S Xu, D Lei, X Gong, X Guo, H Wang, SY Lee, WK Loke, ... Optics express 25 (14), 15818-15827, 2017 | 102 | 2017 |
| Suppression of dark current in germanium-tin on silicon pin photodiode by a silicon surface passivation technique Y Dong, W Wang, D Lei, X Gong, Q Zhou, SY Lee, WK Loke, SF Yoon, ... Optics express 23 (14), 18611-18619, 2015 | 89 | 2015 |
| Germanium-tin on Si avalanche photodiode: device design and technology demonstration Y Dong, W Wang, X Xu, X Gong, D Lei, Q Zhou, Z Xu, WK Loke, SF Yoon, ... IEEE Transactions on Electron Devices 62 (1), 128-135, 2014 | 67 | 2014 |
| Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range W Wang, Y Dong, SY Lee, WK Loke, D Lei, SF Yoon, G Liang, X Gong, ... Optics express 25 (16), 18502-18507, 2017 | 60 | 2017 |
| Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality D Lei, W Wang, Z Zhang, J Pan, X Gong, G Liang, ES Tok, YC Yeo Journal of Applied Physics 119 (2), 024502, 2016 | 49 | 2016 |
| GeSn lateral pin photodetector on insulating substrate S Xu, YC Huang, KH Lee, W Wang, Y Dong, D Lei, S Masudy-Panah, ... Optics express 26 (13), 17312-17321, 2018 | 47 | 2018 |
| GeSn-on-insulator substrate formed by direct wafer bonding D Lei, KH Lee, S Bao, W Wang, B Wang, X Gong, CS Tan, YC Yeo Applied Physics Letters 109 (2), 2016 | 45 | 2016 |
| High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform W Wang, D Lei, YC Huang, KH Lee, WK Loke, Y Dong, S Xu, CS Tan, ... Optics express 26 (8), 10305-10314, 2018 | 42 | 2018 |
| Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band S Xu, K Han, YC Huang, KH Lee, Y Kang, S Masudy-Panah, Y Wu, D Lei, ... Optics express 27 (19), 26924-26939, 2019 | 38 | 2019 |
| Germanium-tin (GeSn) P-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate D Lei, KH Lee, YC Huang, W Wang, S Masudy-Panah, S Yadav, A Kumar, ... IEEE Transactions on Electron Devices 65 (9), 3754-3761, 2018 | 36 | 2018 |
| The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs D Lei, KH Lee, S Bao, W Wang, S Masudy-Panah, S Yadav, A Kumar, ... 2017 Symposium on VLSI Technology, T198-T199, 2017 | 34 | 2017 |
| Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge1− xSnx) Fin Structure W Wang, D Lei, Y Dong, G Xiao, ES Tok, YC Yeo Scientific Reports 7, 2017 | 32 | 2017 |
| Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength Y Dong, W Wang, SY Lee, D Lei, X Gong, WK Loke, SF Yoon, G Liang, ... Semiconductor Science and Technology 31 (9), 095001, 2016 | 30 | 2016 |
| Ultra-low specific contact resistivity (1.4× 10− 9 Ω· cm2) for metal contacts on in-situ Ga-doped Ge0. 95Sn0. 05 film Y Wu, S Luo, W Wang, S Masudy-Panah, D Lei, G Liang, X Gong, YC Yeo Journal of Applied Physics 122 (22), 2017 | 28 | 2017 |
| High Performance Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate D Lei, K Han, Y Wu, Z Liu, X Gong IEEE Journal of the Electron Devices Society 7, 596-600, 2019 | 20 | 2019 |
| InAlP-capped (100) Ge nFETs with 1.06 nm EOT: Achieving record high peak mobility and first integration on 300 mm Si substrate X Gong, Q Zhou, MHS Owen, X Xu, D Lei, SH Chen, G Tsai, CC Cheng, ... 2014 IEEE International Electron Devices Meeting, 9.4. 1-9.4. 4, 2014 | 18 | 2014 |
| Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology S Masudy-Panah, Y Wu, D Lei, A Kumar, YC Yeo, X Gong Journal of Applied Physics 123 (2), 2018 | 17 | 2018 |
| Thermal stability of germanium-tin (GeSn) fins D Lei, KH Lee, S Bao, W Wang, S Masudy-Panah, CS Tan, ES Tok, ... Applied Physics Letters 111 (25), 2017 | 13 | 2017 |
| GeSn p-FinFETs with Sub-10 nm Fin Width Realized on a 200 mm GeSnOI Substrate: Lowest SS of 63 mV/decade, Highest Gm,intof 900 µS/µm, and High-Field µeffof 275 cm … D Lei, K Han, KH Lee, YC Huang, W Wang, S Yadav, A Kumar, Y Wu, ... 2018 IEEE Symposium on VLSI Technology, 197-198, 2018 | 12 | 2018 |
Xiao GongNational University of SingaporeEmail verificata su nus.edu.sg
